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Results: 1-25/34
Authors:
TURUT A
GUMUS A
SAGLAM M
TUZEMEN S
EFEOGLU H
YALCIN N
MISSOUS M
Citation: A. Turut et al., THERMAL-STABILITY OF CR-NI-CO ALLOY SCHOTTKY CONTACTS ON MBE N-GAAS, Semiconductor science and technology, 13(7), 1998, pp. 776-780
Authors:
BUCKLE PD
DAWSON P
KUO CY
ROBERTS AH
TRUSCOTT WS
LYNCH M
MISSOUS M
Citation: Pd. Buckle et al., CHARGE ACCUMULATION, IN GAAS ALGAAS TRIPLE BARRIER RESONANT-TUNNELINGSTRUCTURES/, Journal of applied physics, 83(2), 1998, pp. 882-887
Authors:
PILKINGTON SJ
MISSOUS M
Citation: Sj. Pilkington et M. Missous, THERMAL-STABILITY OF EPITAXIAL ALUMINUM ON IN0.53AL0.47AS SCHOTTKY DIODES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 83(10), 1998, pp. 5282-5288
Authors:
MISSOUS M
AZIZ AA
SANDHU A
Citation: M. Missous et al., INGAP INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURE GROWN BY SOLID SOURCE MOLECULAR-BEAM EPITAXY USING GAP AS PHOSPHORUS SOURCE/, JPN J A P 2, 36(6A), 1997, pp. 647-649
Authors:
ZHENG L
LIN CH
SINGER KE
MISSOUS M
Citation: L. Zheng et al., STRAINED GAINAS QUANTUM-WELL MID-IR EMITTERS, IEE proceedings. Optoelectronics, 144(5), 1997, pp. 360-364
Authors:
MISSOUS M
Citation: M. Missous, FUNDAMENTAL ISSUES OF DEVICE-RELEVANT LOW-TEMPERATURE GAAS AND RELATED MATERIALS PROPERTIES, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 304-310
Authors:
LIN CH
SINGER KE
EVANSFREEMAN JH
HEATH K
MISSOUS M
Citation: Ch. Lin et al., INFRARED PHOTOREFLECTANCE OF INAS, Semiconductor science and technology, 12(12), 1997, pp. 1619-1624
Authors:
BUCKLE PD
DAWSON P
MISSOUS M
TRUSCOTT WS
Citation: Pd. Buckle et al., FULL WAFER OPTICAL CHARACTERIZATION NF RESONANT-TUNNELING STRUCTURES USING PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY, Journal of crystal growth, 175, 1997, pp. 1299-1302
Authors:
MISSOUS M
OHAGAN S
Citation: M. Missous et S. Ohagan, LOW-TEMPERATURE (LT) AND STOICHIOMETRIC LOW-TEMPERATURE (SLT) MBE GAAS AND RELATED-COMPOUNDS - IMPROVED STRUCTURAL, ELECTRICAL AND OPTICAL-PROPERTIES, Journal of crystal growth, 175, 1997, pp. 197-202
Authors:
OHAGAN S
MISSOUS M
Citation: S. Ohagan et M. Missous, THE EFFECT OF SUBSTRATE ORIENTATION ON THE PROPERTIES OF LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL GAAS, Journal of applied physics, 82(5), 1997, pp. 2400-2404
Authors:
FLEISCHER S
BELING CD
FUNG S
NIEVEEN WR
SQUIRE JE
ZHENG JQ
MISSOUS M
Citation: S. Fleischer et al., STRUCTURAL AND DEFECT CHARACTERIZATION OF GAAS AND ALXGA1-XAS GROWN AT LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 81(1), 1997, pp. 190-198
Authors:
WHITAKER MF
DUNSTAN DJ
MISSOUS M
GONZALEZ L
Citation: Mf. Whitaker et al., A GENERAL-APPROACH TO MEASUREMENT OF BAND OFFSETS OF NEAR-GAAS ALLOYS, Physica status solidi. b, Basic research, 198(1), 1996, pp. 349-353
Authors:
DOBACZEWSKI L
MISSOUS M
SINGER KE
ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., NEW DONOR DOPING SOURCES FOR MOLECULAR-BEAM EPITAXY OF ALGASB AND ALGAAS, Materials science and technology, 12(2), 1996, pp. 193-195
Authors:
MISSOUS M
Citation: M. Missous, STOICHIOMETRIC LOW-TEMPERATURE (SLT) GAAS AND ALGAAS GROWN BY MOLECULAR-BEAM EPITAXY, Microelectronics, 27(4-5), 1996, pp. 393-409
Authors:
OHAGAN SP
MISSOUS M
MOTTRAM A
WRIGHT AC
Citation: Sp. Ohagan et al., INTERACTION OF DOPANTS WITH A HOST GAAS LATTICE - THE CASE OF LOW-TEMPERATURE-GROWN MOLECULAR-BEAM EPITAXIAL GAAS(SI), Journal of applied physics, 79(11), 1996, pp. 8384-8390
Authors:
RAHAL A
BOSISIO RG
ROGERS C
OVEY J
SAWAN M
MISSOUS M
Citation: A. Rahal et al., A W-BAND MEDIUM POWER MULTISTACK QUANTUM BARRIER VARACTOR FREQUENCY TRIPLER, IEEE microwave and guided wave letters, 5(11), 1995, pp. 368-370
Authors:
DOBACZEWSKI L
MAUDE DK
MISSOUS M
PORTAL JC
Citation: L. Dobaczewski et al., ON SUBBAND MOBILITIES OBSERVED IN DELTA-DOPED ALGAAS GAAS QUANTUM-WELLS AND GAAS-LAYERS/, Acta Physica Polonica. A, 87(1), 1995, pp. 201-204
Authors:
DOBACZEWSKI L
SINGER KE
MISSOUS M
TRUSCOTT WS
ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., THE USE OF GA2SE3 AND GA2S3 AS DONOR DOPING SOURCES FOR MBE-GROWN ALXGA1-XSB AND ALXGA1-XAS, Semiconductor science and technology, 10(4), 1995, pp. 509-514
Authors:
BANGERT U
TANG B
MISSOUS M
Citation: U. Bangert et al., THERMAL-BEHAVIOR OF ALUMINUM FILMS GROWN BY MOLECULAR-BEAM EPITAXY ONGAAS, Journal of crystal growth, 154(3-4), 1995, pp. 223-230
STOICHIOMETRIC LOW-TEMPERATURE GAAS AND ALGAAS - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY
Authors:
MISSOUS M
Citation: M. Missous, STOICHIOMETRIC LOW-TEMPERATURE GAAS AND ALGAAS - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDY, Journal of applied physics, 78(7), 1995, pp. 4467-4471
Authors:
PRITCHARD RE
MCQUAID SA
HART L
NEWMAN RC
MAKINEN J
VONBARDELEBEN HJ
MISSOUS M
Citation: Re. Pritchard et al., NATIVE DEFECTS IN LOW-TEMPERATURE GAAS AND THE EFFECT OF HYDROGENATION, Journal of applied physics, 78(4), 1995, pp. 2411-2422
Authors:
DOBACZEWSKI L
KACZOR P
MISSOUS M
PEAKER AR
ZYTKIEWICZ ZR
Citation: L. Dobaczewski et al., STRUCTURE OF THE DX STATE FORMED BY DONORS IN (AL,GA)AS AND GA(AS,P), Journal of applied physics, 78(4), 1995, pp. 2468-2477
Authors:
TASKIN T
MCKELL H
MAK L
MISSOUS M
Citation: T. Taskin et al., FABRICATION AND CHARACTERIZATION OF PLANAR MILLIMETER-WAVE SCHOTTKY DIODES EXPLOITING AN EPITAXIAL ALUMINUM ON GAAS STRUCTURE, International journal of electronics, 78(4), 1995, pp. 607-617
Authors:
MISSOUS M
OHAGAN S
Citation: M. Missous et S. Ohagan, NONSTOICHIOMETRY AND DOPANTS RELATED PHENOMENA IN LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of applied physics, 75(7), 1994, pp. 3396-3401
Authors:
OHAGAN S
MISSOUS M
Citation: S. Ohagan et M. Missous, EFFECT OF AS4 GA FLUX RATIO ON ELECTRICAL AND OPTICAL-PROPERTIES OF LOW-TEMPERATURE GAAS GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of applied physics, 75(12), 1994, pp. 7835-7841