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Results:
1-14
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Results: 14
Authors:
SATO T
MIZUSHIMA I
AOKI N
TSUNASHIMA Y
Citation: T. Sato et al., DOMINANT FACTOR FOR THE CONCENTRATION OF PHOSPHORUS INTRODUCED BY VAPOR-PHASE DOPING (VPD), JPN J A P 1, 37(3B), 1998, pp. 1162-1165
Authors:
MIZUSHIMA I
MITANI Y
KOIKE M
YOSHIKI M
TOMITA M
KAMBAYASHI S
Citation: I. Mizushima et al., PRECIPITATION OF BORON IN HIGHLY BORON-DOPED SILICON, JPN J A P 1, 37(3B), 1998, pp. 1171-1173
Authors:
MIZUSHIMA I
MURAKOSHI A
SUGURO K
AOKI N
YAMAUCHI J
Citation: I. Mizushima et al., ULTRA-HIGH DOSE BORON ION-IMPLANTATION - SUPERSATURATION OF BORON ANDITS APPLICATION, Materials chemistry and physics, 54(1-3), 1998, pp. 54-59
Authors:
MIZUSHIMA I
KAMIYA E
ARAI N
SONODA M
YOSHIKI M
TAKAGI S
WAKAMIYA M
KAMBAYASHI S
MIKATA Y
MORI S
KASHIWAGI M
Citation: I. Mizushima et al., DIFFUSION AND SEGREGATION OF CARBON IN SIO2-FILMS, JPN J A P 1, 36(3B), 1997, pp. 1465-1468
Authors:
YAMAUCHI J
AOKI N
MIZUSHIMA I
Citation: J. Yamauchi et al., FIRST-PRINCIPLES STUDY ON B(12) CLUSTERS IN SI, Physical review. B, Condensed matter, 55(16), 1997, pp. 10245-10248
Authors:
KOBAYASHI K
MIZUSHIMA I
Citation: K. Kobayashi et I. Mizushima, IONIC CHARACTER OF SRF2-B2O3-GEO2-SIO2 GLASSES FOR VISCOUS-FLOW AND THEIR APPLICATIONS TO MOS CAPACITORS, Applied physics A: Materials science & processing, 62(4), 1996, pp. 313-315
Authors:
KOBAYASHI K
MIZUSHIMA I
Citation: K. Kobayashi et I. Mizushima, REFLOW OF BEF2-B2O3-GEO2-SIO2 GLASSES AND APPLICATION OF THEIR MEMBRANES TO METAL-OXIDE-SILICON (MOS) CAPACITORS, Materials science & engineering. B, Solid-state materials for advanced technology, 39(3), 1996, pp. 224-227
Authors:
KOBAYASHI K
MIZUSHIMA I
Citation: K. Kobayashi et I. Mizushima, OH-RELATED CAPACITANCE-VOLTAGE RECOVERY EFFECT IN MOS CAPACITORS PASSIVATED BY ZNO-B2O3-SIO2-P2O5 GLASSES .8. THE EFFECTS OF SRF2 AND BEO CONTENTS, Journal of materials science letters, 15(4), 1996, pp. 357-359
Authors:
MIZUSHIMA I
CHIKAZAWA M
WATANABE T
Citation: I. Mizushima et al., MICROSTRUCTURE OF ELECTRODEPOSITED CU-NI BINARY ALLOY-FILMS, Journal of the Electrochemical Society, 143(6), 1996, pp. 1978-1983
Authors:
MIZUSHIMA I
MURAKOSHI A
WATANABE M
YOSHIKI M
HOTTA M
KASHIWAGI M
Citation: I. Mizushima et al., HOLE GENERATION WITHOUT ANNEALING IN HIGH-DOSE BORON-IMPLANTED SILICON - HEAVY DOPING BY B-12 ICOSAHEDRON AS A DOUBLE ACCEPTOR, JPN J A P 1, 33(1B), 1994, pp. 404-407
Authors:
KOBAYASHI K
MIZUSHIMA I
Citation: K. Kobayashi et I. Mizushima, OH-RELATED CAPACITANCE-VOLTAGE RECOVERY EFFECT IN MOS CAPACITORS PASSIVATED BY PBO-B2O3-SIO2-AL2O3 GLASSES .3. THE EFFECTS OF PBO CONTENT, Journal of materials science letters, 13(24), 1994, pp. 1764-1766
Authors:
KOBAYASHI K
MIZUSHIMA I
Citation: K. Kobayashi et I. Mizushima, OH-RELATED CAPACITANCE-VOLTAGE RECOVERY EFFECT IN MOS CAPACITORS PASSIVATED BY PBO-B2O3-SIO2-GEO2 GLASSES - THE EFFECTS OF OH CONTENT, Journal of non-crystalline solids, 180(1), 1994, pp. 84-87
Authors:
AOKI N
KANEMURA T
MIZUSHIMA I
Citation: N. Aoki et al., ANOMALOUS DIFFUSION OF LIGHTLY IMPLANTED AS INTO SI SUBSTRATE DURING N2 ANNEALING, Applied physics letters, 64(23), 1994, pp. 3133-3135
Authors:
MIZUSHIMA I
WATANABE M
MURAKOSHI A
HOTTA M
KASHIWAGI M
YOSHIKI M
Citation: I. Mizushima et al., HOLE GENERATION BY ICOSAHEDRAL B-12 IN HIGH-DOSE BORON AS-IMPLANTED SILICON, Applied physics letters, 63(3), 1993, pp. 373-375
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1-14
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