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Results: 1-25/117
Authors:
GARRIDO B
PEREZRODRIGUEZ A
MORANTE JR
ACHIQ A
GOURBILLEAU F
MADELON R
RIZK R
Citation: B. Garrido et al., STRUCTURAL, OPTICAL, AND ELECTRICAL-PROPERTIES OF NANOCRYSTALLINE SILICON FILMS DEPOSITED BY HYDROGEN PLASMA SPUTTERING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1851-1859
Authors:
PRESSEL K
FRANZ M
KRUGER D
OSTEN HJ
GARRIDO B
MORANTE JR
Citation: K. Pressel et al., OXIDATION OF SI1-YCY ESS-THAN-OR-EQUAL-TO-Y-LESS-THAN-OR-EQUAL-TO-0.02) STRAINED LAYERS GROWN ON SI(001), Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1757-1761
Authors:
KAPPLER J
BARSAN N
WEIMAR U
DIEGUEZ A
ALAY JL
ROMANORODRIGUEZ A
MORANTE JR
GOPEL W
Citation: J. Kappler et al., CORRELATION BETWEEN XPS, RAMAN AND TEM MEASUREMENTS AND THE GAS SENSITIVITY OF PT AND PD DOPED SNO2 BASED GAS SENSORS, Fresenius' journal of analytical chemistry, 361(2), 1998, pp. 110-114
Authors:
SERRE C
GOROSTIZA P
PEREZRODRIGUEZ A
SANZ F
MORANTE JR
Citation: C. Serre et al., MEASUREMENT OF MICROMECHANICAL PROPERTIES OF POLYSILICON MICROSTRUCTURES WITH AN ATOMIC-FORCE MICROSCOPE, Sensors and actuators. A, Physical, 67(1-3), 1998, pp. 215-219
Authors:
ALVAREZ AL
CALLE F
VALTUENA JF
FAURA J
SANCHEZ MA
CALLEJA E
MUNOZ E
MORANTE JR
GONZALEZ D
ARAUJO D
ROJA RG
Citation: Al. Alvarez et al., INFLUENCE OF INTERFACE DISLOCATIONS ON SURFACE KINETICS DURING EPITAXIAL-GROWTH OF INGAAS, Applied surface science, 123, 1998, pp. 303-307
Authors:
CAMMACK DS
MCGREGOR SM
MCCHESNEY JJ
CLARK SA
DUNSTAN PR
BURGESS SR
WILKS SP
PEIRO F
FERRER JC
CORNET A
MORANTE JR
KESTLE A
WESTWOOD DI
ELLIOTT M
Citation: Ds. Cammack et al., AN INVESTIGATION OF THE PROPERTIES OF INTIMATE IN-INXGA1-XAS(100) INTERFACES FORMED AT ROOM AND CRYOGENIC TEMPERATURES, Applied surface science, 123, 1998, pp. 501-507
Authors:
FERRER JC
PEIRO F
CORNET A
MORANTE JR
UTZMEIER T
ARMELLES G
BRIONES F
Citation: Jc. Ferrer et al., MORPHOLOGY EVOLUTION OF INSB ISLAND GROWN ON INP SUBSTRATES BY ATOMICLAYER MOLECULAR-BEAM EPITAXY, Microelectronic engineering, 43-4, 1998, pp. 51-57
Authors:
PEREZRODRIGUEZ A
CORNET A
MORANTE JR
Citation: A. Perezrodriguez et al., PHYSICAL TECHNIQUES FOR SILICON LAYER ANALYSIS, Microelectronic engineering, 40(3-4), 1998, pp. 223-237
Authors:
PRIETO JA
ARMELLES G
UTZMEIER T
BRIONES F
FERRER JC
PEIRO F
CORNET A
MORANTE JR
Citation: Ja. Prieto et al., STRAIN-INDUCED QUENCHING OF OPTICAL-TRANSITIONS IN CAPPED SELF-ASSEMBLED QUANTUM-DOT STRUCTURES, Physical review letters, 80(5), 1998, pp. 1094-1097
Authors:
GALAYEV AA
PARKHOMENKO YN
CHTCHERBATCHEV KD
PODGORNY DA
BELOGOROHOV AI
DIEGUEZ A
ROMANORODRIGUEZ A
PEREZRODRIGUEZ A
MORANTE JR
Citation: Aa. Galayev et al., STRUCTURAL-ANALYSIS OF BURIED CONDUCTING COSI2 LAYERS FORMED IN SI BYHIGH-DOSE CO ION-IMPLANTATION, Journal of crystal growth, 187(3-4), 1998, pp. 435-443
Authors:
PEIRO F
CORNET A
MORANTE JR
BECK M
PY MA
Citation: F. Peiro et al., SURFACE-ROUGHNESS IN INGAAS CHANNELS OF HIGH-ELECTRON-MOBILITY TRANSISTORS DEPENDING ON THE GROWTH TEMPERATURE - STRAIN-INDUCED OR DUE TO ALLOY DECOMPOSITION, Journal of applied physics, 83(12), 1998, pp. 7537-7541
Authors:
COSTA J
ROURA P
MORANTE JR
BERTRAN E
Citation: J. Costa et al., BLACKBODY EMISSION UNDER LASER EXCITATION OF SILICON NANOPOWDER PRODUCED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 83(12), 1998, pp. 7879-7885
Authors:
ACHIQ A
RIZK R
GOURBILLEAU F
MADELON R
GARRIDO B
PEREZRODRIGUEZ A
MORANTE JR
Citation: A. Achiq et al., EFFECTS OF PRIOR HYDROGENATION ON THE STRUCTURE AND PROPERTIES OF THERMALLY NANOCRYSTALLIZED SILICON LAYERS, Journal of applied physics, 83(11), 1998, pp. 5797-5803
Authors:
ARTAMONOV VV
KLYUI NI
MELNIK VP
ROMANYUK BN
VALAKH MY
VASILIK O
SEMENOVICH VA
PEREZRODRIGUEZ A
MORANTE JR
Citation: Vv. Artamonov et al., MICRORAMAN AND MICROHARDNESS STUDY OF NITROGEN-IMPLANTED DIAMOND-LIKECARBON-FILMS, Carbon (New York), 36(5-6), 1998, pp. 791-794
Authors:
BELOGOROKHOV AI
BELOGOROKHOVA LI
PEREZRODRIGUEZ A
MORANTE JR
GAVRILOV S
Citation: Ai. Belogorokhov et al., OPTICAL CHARACTERIZATION OF POROUS SILICON EMBEDDED WITH CDSE NANOPARTICLES, Applied physics letters, 73(19), 1998, pp. 2766-2768
Authors:
BONAFOS C
GARRIDO B
LOPEZ M
ROMANORODRIGUEZ A
GONZALEZVARONA O
PEREZRODRIGUEZ A
MORANTE JR
Citation: C. Bonafos et al., ION-BEAM SYNTHESIS AND STRUCTURAL CHARACTERIZATION OF ZNS NANOCRYSTALS IN SIO2, Applied physics letters, 72(26), 1998, pp. 3488-3490
Authors:
FERRER JC
PEIRO F
CORNET A
MORANTE JR
UTZMEIER T
BRIONES F
Citation: Jc. Ferrer et al., MICROSTRUCTURE OF PYRAMIDAL DEFECTS IN INSB LAYERS GROWN BY ATOMIC LAYER MOLECULAR-BEAM EPITAXY ON INP SUBSTRATES, Journal de physique. III, 7(12), 1997, pp. 2317-2324
Authors:
PEIRO F
FERRER JC
CORNET A
MORANTE JR
BECK M
PY MA
Citation: F. Peiro et al., WELL SURFACE-ROUGHNESS AND FAULT DENSITY EFFECTS ON THE HALL-MOBILITYOF INXGA1-XAS INYAL1-YAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1715-1723
Authors:
DIEGUEZ A
VILA A
CORNET A
CLARK SA
WESTWOOD DI
MORANTE JR
Citation: A. Dieguez et al., DEFECTS, SURFACE ROUGHENING, AND ANISOTROPY ON THE TENSILE INXGA1-XASINP(001) SYSTEM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(3), 1997, pp. 687-695
Authors:
MORANTE JR
Citation: Jr. Morante, THE 7TH EUROPEAN WORKSHOP ON MICROMECHANICS (MME96) - PREFACE, Journal of micromechanics and microengineering, 7(3), 1997, pp. 3-3
Authors:
NAVARRO M
LOPEZVILLEGAS JM
SAMITIER J
MORANTE JR
BAUSELLS J
MERLOS A
Citation: M. Navarro et al., ELECTROCHEMICAL ETCHING OF POROUS SILICON SACRIFICIAL LAYERS FOR MICROMACHINING APPLICATIONS, Journal of micromechanics and microengineering, 7(3), 1997, pp. 131-132
Authors:
SANGALETTI T
DEPERO LE
DIEGUEZ A
MARCA G
MORANTE JR
ROMANORODRIGUEZ A
SBERVEGLIERI G
Citation: T. Sangaletti et al., MICROSTRUCTURE AND MORPHOLOGY OF TIN DIOXIDE MULTILAYER THIN-FILM GASSENSORS, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 268-274
Authors:
MORENO M
DOMINGUEZ C
MUNOZ J
CALDERER J
MORANTE JR
Citation: M. Moreno et al., PHOTOSENSOR AND OPTICAL-WAVE WIDE COUPLING IN SILICON TECHNOLOGY, Sensors and actuators. A, Physical, 62(1-3), 1997, pp. 524-528
Authors:
NAVARRO M
LOPEZVILLEGAS JM
SAMITIER J
MORANTE JR
BAUSELLS J
Citation: M. Navarro et al., IMPROVEMENT OF THE POROUS SILICON SACRIFICIAL-LAYER ETCHING FOR MICROMACHINING APPLICATIONS, Sensors and actuators. A, Physical, 62(1-3), 1997, pp. 676-679
Authors:
PEIRO F
FERRER JC
CORNET A
MORANTE JR
BECK M
PY MA
Citation: F. Peiro et al., CORRELATION OF ELECTRICAL ANISOTROPIES OF HEMT DEVICES WITH DEFECT DISTRIBUTION AND INGAAS WELL ROUGHNESS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 325-329