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Results: 1-13 |
Results: 13
HOW THE TYPE OF BOMBARDING ION AFFECTS THE FORMATION OF RADIATION DEFECTS IN SILICON
Authors: BARABANENKO MY LEONOV AV MORDKOVICH VN OMELYANOVSKAYA NM
Citation: My. Barabanenko et al., HOW THE TYPE OF BOMBARDING ION AFFECTS THE FORMATION OF RADIATION DEFECTS IN SILICON, Semiconductors, 32(5), 1998, pp. 466-468
PORE FORMATION ON THE SILICON-METAL INTERFACE IN SILICON-ON-INSULATORSTRUCTURES
Authors: AKIMOV AG BARABANENKOV MY MORDKOVICH VN
Citation: Ag. Akimov et al., PORE FORMATION ON THE SILICON-METAL INTERFACE IN SILICON-ON-INSULATORSTRUCTURES, Journal of applied physics, 83(12), 1998, pp. 7625-7627
A CONTROLLABLE RESISTOR WITH FEATURES OF A FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR HALL-EFFECT SENSOR
Authors: AKIMOV AG BARABANENKOV MY BARANOCHNIKOV ML LEONOV AV MOKRUSHIN AD MORDKOVICH VN OMELYANOVSKAYA NM
Citation: Ag. Akimov et al., A CONTROLLABLE RESISTOR WITH FEATURES OF A FIELD-EFFECT TRANSISTOR AND SEMICONDUCTOR HALL-EFFECT SENSOR, Instruments and experimental techniques (New York), 41(5), 1998, pp. 706-709
ON LIGHT SUPPRESSED DIVACANCY FORMATION AT PHOTON-ASSISTED ION-IMPLANTATION OF SILICON
Authors: BARABANENKOV MY MORDKOVICH VN MIKHNOVICH VV
Citation: My. Barabanenkov et al., ON LIGHT SUPPRESSED DIVACANCY FORMATION AT PHOTON-ASSISTED ION-IMPLANTATION OF SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(1), 1997, pp. 73-78
THE CHEMICAL FACTOR AND ITS INFLUENCE ON THE FORMATION OF DEFECT STRUCTURES AND THEIR GETTERING PROPERTIES IN LAYERS OF SILICON IMPLANTED WITH CHEMICAL-ACTIVE IONS
Authors: ALESHIN AN ENISHERLOVA KL KALININ AA MORDKOVICH VN
Citation: An. Aleshin et al., THE CHEMICAL FACTOR AND ITS INFLUENCE ON THE FORMATION OF DEFECT STRUCTURES AND THEIR GETTERING PROPERTIES IN LAYERS OF SILICON IMPLANTED WITH CHEMICAL-ACTIVE IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 184-187
EFFECT OF PHOTOEXCITATION ON THE EFFICIENCY OF DEFECT CREATION DURINGELECTRON-BOMBARDMENT OF SILICON
Authors: BOLDYREV SN MORDKOVICH VN OMELYANOVSKAYA NM FEKLISOVA OV YARYKIN NA
Citation: Sn. Boldyrev et al., EFFECT OF PHOTOEXCITATION ON THE EFFICIENCY OF DEFECT CREATION DURINGELECTRON-BOMBARDMENT OF SILICON, Semiconductors, 28(10), 1994, pp. 1009-1011
DEFECTS IN SILICON IMPLANTED SIMULTANEOUSLY WITH ADDITIONAL IONIZATION
Authors: EROKHIN YN ITALYANTSEV AG MALININ AA MORDKOVICH VN
Citation: Yn. Erokhin et al., DEFECTS IN SILICON IMPLANTED SIMULTANEOUSLY WITH ADDITIONAL IONIZATION, Radiation effects and defects in solids, 128(3), 1994, pp. 187-188
RBS STUDIES OF NICKEL BEHAVIOR IN SILICON, AMORPHIZED WITH NICKEL IONS
Authors: KUZNETSOV AY MORDKOVICH VN VYATKIN AF
Citation: Ay. Kuznetsov et al., RBS STUDIES OF NICKEL BEHAVIOR IN SILICON, AMORPHIZED WITH NICKEL IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 940-942
INFLUENCE OF IN-SITU PHOTOEXCITATION ON THE RADIATION DEFECT FORMATION IN ELECTRON-IRRADIATED SILICON
Authors: BOLDYREV SN MORDKOVICH VN OMELYANOVSKAYA NM
Citation: Sn. Boldyrev et al., INFLUENCE OF IN-SITU PHOTOEXCITATION ON THE RADIATION DEFECT FORMATION IN ELECTRON-IRRADIATED SILICON, Physica status solidi. a, Applied research, 143(2), 1994, pp. 110000071-110000074
PRECIPITATION, EPITAXY AND NUCLEATION IN NICKEL IMPLANTED A-SI
Authors: KUZNETSOV AY KHODOS II MORDKOVICH VN VYATKIN AF
Citation: Ay. Kuznetsov et al., PRECIPITATION, EPITAXY AND NUCLEATION IN NICKEL IMPLANTED A-SI, Applied surface science, 73, 1993, pp. 253-259
SEQUENTIAL ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS IN SILICON
Authors: DANILIN AB DRAKIN KA MALININ AA MORDKOVICH VN PETROV AF SARAIKIN VV VYLETALINA OI
Citation: Ab. Danilin et al., SEQUENTIAL ION-BEAM SYNTHESIS OF BURIED SI3N4 LAYERS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 83(1-2), 1993, pp. 173-176
SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON
Authors: DANILIN AB MALININ AA MORDKOVICH VN SARAIKIN VV VYLETALINA OI
Citation: Ab. Danilin et al., SPATIAL LOCALIZATION OF THE BURIED ION-BEAM SYNTHESIZED LAYER OF SILICON DIOXIDE INCLUSIONS IN SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 82(3), 1993, pp. 431-434
ENHANCED SOLID-PHASE EPITAXIAL RECRYSTALLIZATION OF AMORPHOUS-SILICONDUE TO NICKEL SILICIDE PRECIPITATION RESULTING FROM ION-IMPLANTATION AND ANNEALING
Authors: KUZNETSOV AY KHODOS II MORDKOVICH VN VYATKIN AF CHICHENIN NG
Citation: Ay. Kuznetsov et al., ENHANCED SOLID-PHASE EPITAXIAL RECRYSTALLIZATION OF AMORPHOUS-SILICONDUE TO NICKEL SILICIDE PRECIPITATION RESULTING FROM ION-IMPLANTATION AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 990-993
Risultati: 1-13 |