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Results: 1-25/28
Authors:
FU Y
WILLANDER M
HAN P
MATSUURA T
MUROTA J
Citation: Y. Fu et al., SI-C ATOMIC BOND AND ELECTRONIC BAND-STRUCTURE OF A CUBIC SI1-YCY ALLOY, Physical review. B, Condensed matter, 58(12), 1998, pp. 7717-7722
Authors:
YAMAMOTO Y
MATSUURA T
MUROTA J
Citation: Y. Yamamoto et al., SURFACE-REACTION OF ALTERNATELY SUPPLIED WF6 AND SIH4 GASES, Surface science, 408(1-3), 1998, pp. 190-194
Authors:
MATSUURA T
SUGIYAMA T
MUROTA J
Citation: T. Matsuura et al., ATOMIC-LAYER SURFACE-REACTION OF CHLORINE ON SI AND GE ASSISTED BY ANULTRACLEAN ECR PLASMA, Surface science, 404(1-3), 1998, pp. 202-205
Authors:
IZENA A
SAKURABA M
MATSUURA T
MUROTA J
Citation: A. Izena et al., LOW-TEMPERATURE REACTION OF CH4 ON SI(100), Journal of crystal growth, 188(1-4), 1998, pp. 131-136
Authors:
WATANABE T
ICHIKAWA A
SAKURABA M
MATSUURA T
MUROTA J
Citation: T. Watanabe et al., ATOMIC-ORDER THERMAL NITRIDATION OF SILICON AT LOW-TEMPERATURES, Journal of the Electrochemical Society, 145(12), 1998, pp. 4252-4256
Authors:
WATANABE T
SAKURABA M
MATSUURA T
MUROTA J
Citation: T. Watanabe et al., ATOMIC-LAYER SURFACE-REACTION OF SIH4 ON GE(100), JPN J A P 1, 36(6B), 1997, pp. 4042-4045
Authors:
SUGIYAMA T
MATSUURA T
MUROTA J
Citation: T. Sugiyama et al., ATOMIC-LAYER ETCHING OF GE USING AN ULTRACLEAN ECR PLASMA, Applied surface science, 112, 1997, pp. 187-190
Authors:
LEE YG
KAWASHIMA T
HANAIZUMI O
TAKAHASHI I
MUROTA J
KAWAKAMI S
Citation: Yg. Lee et al., LOW-LOSS LAMINATED POLARIZATION SPLITTERS FOR WAVELENGTHS LONGER THAN1.3 MU-M PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Thin solid films, 292(1-2), 1997, pp. 179-183
Authors:
KOBAYASHI S
SAKURABA M
MATSUURA T
MUROTA J
MIKOSHIBA N
Citation: S. Kobayashi et al., INITIAL GROWTH-CHARACTERISTICS OF GERMANIUM ON SILICON IN LPCVD USINGGERMANE GAS, Journal of crystal growth, 174(1-4), 1997, pp. 686-690
Authors:
MIZUTANI G
SONODA Y
USHIODA S
MAEDA T
MUROTA J
Citation: G. Mizutani et al., 2ND-HARMONIC GENERATION FROM SI1-XGEX EPITAXIAL-FILMS WITH A VICINAL FACE - FILM THICKNESS DEPENDENCE, JPN J A P 1, 35(2A), 1996, pp. 644-647
Authors:
NAYAK DK
GOTO K
YUTANI A
MUROTA J
SHIRAKI Y
Citation: Dk. Nayak et al., HIGH-MOBILITY STRAINED-SI PMOSFETS, I.E.E.E. transactions on electron devices, 43(10), 1996, pp. 1709-1716
Authors:
MIZUTANI G
SONODA Y
USHIODA S
MAEDA T
MUROTA J
Citation: G. Mizutani et al., OPTICAL 2ND-HARMONIC GENERATION IN SI1-XGEX FILM EPITAXIALLY GROWN ONSI(100), JPN J A P 2, 34(1B), 1995, pp. 119-121
Authors:
MUROTA J
SAKURABA M
WATANABE T
MATSUURA T
SAWADA Y
Citation: J. Murota et al., ATOMIC LAYER-BY-LAYER EPITAXY OF SILICON AND GERMANIUM USING FLASH HEATING IN CVD, Journal de physique. IV, 5(C5), 1995, pp. 1101-1108
Authors:
MUROTA J
TAKASAWA Y
FUJIMOTO H
GOTO K
MATSUURA T
SAWADA Y
Citation: J. Murota et al., LOW-TEMPERATURE EPITAXIAL-GROWTH MECHANISM OF SI1-XGEX FILMS IN THE SILANE AND GERMANE REACTIONS, Journal de physique. IV, 5(C5), 1995, pp. 1165-1172
Authors:
SATO S
YUMINE M
YAMA T
MUROTA J
NAKAJIMA K
SAWADA Y
Citation: S. Sato et al., LSI NEURAL CHIP OF PULSE-OUTPUT NETWORK WITH PROGRAMMABLE SYNAPSE, IEICE transactions on electronics, E78C(1), 1995, pp. 94-100
Authors:
NAKAJIMA K
SATO S
KITAURA T
MUROTA J
SAWADA Y
Citation: K. Nakajima et al., HARDWARE IMPLEMENTATION OF NEW ANALOG MEMORY FOR NEURAL NETWORKS, IEICE transactions on electronics, E78C(1), 1995, pp. 101-105
Authors:
MUROTA J
ONO S
Citation: J. Murota et S. Ono, LOW-TEMPERATURE EPITAXIAL-GROWTH OF SI SI1-XGEX/SI HETEROSTRUCTURE BYCHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 33(4B), 1994, pp. 2290-2299
Authors:
HONMA F
MUROTA J
GOTO K
MAEDA T
SAWADA Y
Citation: F. Honma et al., ULTRASHALLOW JUNCTION FORMATION USING LOW-TEMPERATURE SELECTIVE SI1-XGEX CHEMICAL-VAPOR-DEPOSITION, JPN J A P 1, 33(4B), 1994, pp. 2300-2303
Authors:
YOKOO K
SATO S
KOSHITA G
AMANO I
MUROTA J
ONO S
Citation: K. Yokoo et al., ENERGY-DISTRIBUTION OF TUNNELING EMISSION FROM SI-GATE METAL-OXIDE-SEMICONDUCTOR CATHODE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(2), 1994, pp. 801-805
Authors:
SAKURABA M
MUROTA J
WATANABE T
SAWADA Y
ONO S
Citation: M. Sakuraba et al., ATOMIC-LAYER EPITAXY CONTROL OF GE AND SI IN FLASH-HEATING CVD USING GEH4 AND SIH4 GASES, Applied surface science, 82-3, 1994, pp. 354-358
Authors:
SUZUE K
MATSUURA T
MUROTA J
SAWADA Y
OHMI T
Citation: K. Suzue et al., SUBSTRATE ORIENTATION DEPENDENCE OF SELF-LIMITED ATOMIC-LAYER ETCHINGOF SI WITH CHLORINE ADSORPTION AND LOW-ENERGY AR+ IRRADIATION, Applied surface science, 82-3, 1994, pp. 422-427
Authors:
SAKURABA M
MUROTA J
ONO S
Citation: M. Sakuraba et al., STABILITY OF THE DIMER STRUCTURE FORMED ON SI(100) BY ULTRACLEAN LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of applied physics, 75(7), 1994, pp. 3701-3703
Authors:
MUROTA J
MAEDA T
GOTO K
SAKAMOTO K
AIZAWA K
USHIODA S
ONO S
Citation: J. Murota et al., SI SI1-X GEX/SI HETEROSTRUCTURE GROWTH BY ULTRACLEAN LOW-TEMPERATURE LPCVD FOR THE FABRICATION OF NOVEL HETERODEVICE/, Journal de physique. IV, 3(C3), 1993, pp. 403-410
Authors:
MUROTA J
HONMA F
YOSHIDA T
GOTO K
MAEDA T
AIZAWA K
SAWADA Y
Citation: J. Murota et al., LOW-TEMPERATURE EPITAXIAL-GROWTH OF IN-SITU B-DOPED SI1-XGEX FILMS, Journal de physique. IV, 3(C3), 1993, pp. 427-432
Authors:
SAKURABA M
MUROTA J
ONO S
Citation: M. Sakuraba et al., SILICON ATOMIC LAYER GROWTH USING FLASH HEATING IN CVD, Journal de physique. IV, 3(C3), 1993, pp. 449-456