Results: 1-14 |
Results: 14
A 1-GB DRAM FOR FILE APPLICATIONS
Authors: SUGIBAYASHI T NARITAKE I UTSUGI S SHIBAHARA K OIKAWA R MORI H IWAO S MUROTANI T KOYAMA K FUKUZAWA S ITANI T KASAMA K OKUDA T OHYA S OGAWA M
Citation: T. Sugibayashi et al., A 1-GB DRAM FOR FILE APPLICATIONS, IEEE journal of solid-state circuits, 30(11), 1995, pp. 1277-1280
A 30-NS 256-MB DRAM WITH A MULTIDIVIDED ARRAY STRUCTURE
Authors: SUGIBAYASHI T TAKESHIMA T NARITAKE I MATANO T TAKADA H AIMOTO Y FURUTA K FUJITA M SAEKI T SUGAWARA H MUROTANI T KASAI N SHIBAHARA K NAKAJIMA K HADA H HAMADA T AIZAKI N KUNIO T KAKEHASHI E MASUMORI K TANIGAWA T
Citation: T. Sugibayashi et al., A 30-NS 256-MB DRAM WITH A MULTIDIVIDED ARRAY STRUCTURE, IEEE journal of solid-state circuits, 28(11), 1993, pp. 1092-1098
A 4-LEVEL STORAGE 4-GB DRAM
Authors: OKUDA T MUROTANI T
Citation: T. Okuda et T. Murotani, A 4-LEVEL STORAGE 4-GB DRAM, IEEE journal of solid-state circuits, 32(11), 1997, pp. 1743-1747
A CROSSING CHARGE RECYCLE REFRESH SCHEME WITH A SEPARATED DRIVER SENSE-AMPLIFIER FOR GB DRAMS
Authors: NARITAKE I SUGIBAYASHI T UTSUGI S MUROTANI T
Citation: I. Naritake et al., A CROSSING CHARGE RECYCLE REFRESH SCHEME WITH A SEPARATED DRIVER SENSE-AMPLIFIER FOR GB DRAMS, IEICE transactions on electronics, E79C(6), 1996, pp. 787-791
DESIGN RULE RELAXATION APPROACH FOR HIGH-DENSITY DRAMS
Authors: SAEKI T KAKEHASHI E MORI H KOGA H NODA K FUJITA M SUGAWARA H NAGATA K NISHIMOTO S MUROTANI T
Citation: T. Saeki et al., DESIGN RULE RELAXATION APPROACH FOR HIGH-DENSITY DRAMS, IEICE transactions on electronics, E77C(3), 1994, pp. 406-415
EVALUATION OF MICRO-DEFECTS BY DRAM DATA RETENTION CHARACTERISTICS MEASUREMENT
Authors: MIYOSHI K TERASHIMA K MURAMATSU Y NISHIO N MUROTANI T SAITO S
Citation: K. Miyoshi et al., EVALUATION OF MICRO-DEFECTS BY DRAM DATA RETENTION CHARACTERISTICS MEASUREMENT, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 78-81
HIERARCHICAL WORD-LINE ARCHITECTURE FOR LARGE-CAPACITY DRAMS
Authors: MUROTANI T SUGIBAYASHI T TAKADA M
Citation: T. Murotani et al., HIERARCHICAL WORD-LINE ARCHITECTURE FOR LARGE-CAPACITY DRAMS, IEICE transactions on electronics, E80C(4), 1997, pp. 550-556
HIGH-EFFICIENCY THIN-FILM SILICON SOLAR-CELLS PREPARED BY ZONE-MELTING RECRYSTALLIZATION
Authors: ISHIHARA T ARIMOTO S MORIKAWA H KUMABE H MUROTANI T MITSUI S
Citation: T. Ishihara et al., HIGH-EFFICIENCY THIN-FILM SILICON SOLAR-CELLS PREPARED BY ZONE-MELTING RECRYSTALLIZATION, Applied physics letters, 63(26), 1993, pp. 3604-3606
HIGH-EFFICIENT OPERATION OF LARGE-AREA (100-CM(2)) THIN-FILM POLYCRYSTALLINE SILICON SOLAR-CELL BASED ON SOI STRUCTURE
Authors: ARIMOTO S MORIKAWA H DEGUCHI M KAWAMA Y MATSUNO Y ISHIHARA T KUMABE H MUROTANI T
Citation: S. Arimoto et al., HIGH-EFFICIENT OPERATION OF LARGE-AREA (100-CM(2)) THIN-FILM POLYCRYSTALLINE SILICON SOLAR-CELL BASED ON SOI STRUCTURE, Solar energy materials and solar cells, 34(1-4), 1994, pp. 257-262
LARGE-SCALE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGHLY RELIABLE 780 NM ALGAAS MULTIPLE-QUANTUM-WELL HIGH-POWER LASERS
Authors: MIHASHI Y MIYASHITA M HAYAFUJI N KANENO N KAGEYAMA S KARAKIDA S KIZUKI H SHIMA A MUROTANI T
Citation: Y. Mihashi et al., LARGE-SCALE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGHLY RELIABLE 780 NM ALGAAS MULTIPLE-QUANTUM-WELL HIGH-POWER LASERS, Journal of crystal growth, 133(3-4), 1993, pp. 281-288
LIGHT TRAPPING FOR THIN-FILM SILICON SOLAR-CELLS FABRICATED ON INSULATOR
Authors: SASAKI H MORIKAWA H MATSUNO Y DEGUCHI M ISHIHARA T KUMABE H MUROTANI T MITSUI S
Citation: H. Sasaki et al., LIGHT TRAPPING FOR THIN-FILM SILICON SOLAR-CELLS FABRICATED ON INSULATOR, JPN J A P 1, 33(6A), 1994, pp. 3389-3392
SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON ALGAAS COMBINED WITH IN-SITU HCL-GAS ETCHING
Authors: KIZUKI H HAYAFUJI N FUJII N KANENO N MIHASHI Y MUROTANI T
Citation: H. Kizuki et al., SELECTIVE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF GAAS ON ALGAAS COMBINED WITH IN-SITU HCL-GAS ETCHING, Journal of crystal growth, 134(1-2), 1993, pp. 35-42
VAPOR-PHASE EPITAXY OF INN WITH HALIDE TRANSPORT ON EARTH AND UNDER MICROGRAVITY
Authors: KIMURA T NISHIMURA T MUROTANI T ONO H
Citation: T. Kimura et al., VAPOR-PHASE EPITAXY OF INN WITH HALIDE TRANSPORT ON EARTH AND UNDER MICROGRAVITY, Journal of applied physics, 75(1), 1994, pp. 624-626
ZONE-MELTING RECRYSTALLIZATION OF SILICON THIN-FILMS FOR SOLAR-CELL APPLICATION
Authors: ISHIHARA T ARIMOTO S KUMABE H MUROTANI T
Citation: T. Ishihara et al., ZONE-MELTING RECRYSTALLIZATION OF SILICON THIN-FILMS FOR SOLAR-CELL APPLICATION, Progress in photovoltaics, 3(2), 1995, pp. 105-113
Risultati: 1-14 |