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Results: 1-25/26
Authors:
Castan, H
Duenas, S
Barbolla, J
Blanco, N
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques, JPN J A P 1, 40(7), 2001, pp. 4479-4484
Authors:
Redondo, E
Martil, I
Gonzalez-Diaz, G
Castan, H
Duenas, S
Citation: E. Redondo et al., Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx : H/InP structures, J VAC SCI B, 19(1), 2001, pp. 186-191
Authors:
Castan, H
Duenas, S
Barbolla, J
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., C-V, DLTS and conductance transient characterization of SiNx : H/InP interface improved by N-2 remote plasma cleaning of the InP surface, J MAT S-M E, 12(4-6), 2001, pp. 263-267
Authors:
Martinez, FL
del Prado, A
Martil, I
Gonzalez-Diaz, G
Kliefoth, K
Fussel, W
Citation: Fl. Martinez et al., Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy, SEMIC SCI T, 16(7), 2001, pp. 534-542
Authors:
Martinez, FL
del Prado, A
Martil, I
Gonzalez-Diaz, G
Bohne, W
Fuhs, W
Rohrich, J
Selle, B
Sieber, I
Citation: Fl. Martinez et al., Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing - art. no. 245320, PHYS REV B, 6324(24), 2001, pp. 5320
Authors:
Martinez, FL
San Andres, E
del Prado, A
Martil, I
Bravo, D
Lopez, FJ
Citation: Fl. Martinez et al., Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx : H/Si devices, J APPL PHYS, 90(3), 2001, pp. 1573-1581
Authors:
Castan, H
Duenas, S
Barbolla, J
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx : H/InP metal-insulator-semiconductor structures, JPN J A P 1, 39(11), 2000, pp. 6212-6215
Authors:
Blanco, MN
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique, SEMIC SCI T, 15(8), 2000, pp. 823-828
Authors:
Bohne, W
Fuhs, W
Rohrich, J
Selle, B
Gonzalez-Diaz, G
Martil, I
Martinez, FL
del Prado, A
Citation: W. Bohne et al., Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy, SURF INT AN, 30(1), 2000, pp. 534-537
Authors:
Redondo, E
Blanco, MN
Martil, I
Gonzalez-Diaz, G
Citation: E. Redondo et al., N-2 remote plasma cleaning of InP to improve SiNx : H/InP interface performance, MICROEL REL, 40(4-5), 2000, pp. 837-840
Authors:
Castan, H
Duenas, S
Barbolla, J
Redondo, E
Blanco, N
Martil, I
Gonzalez-Diaz, G
Citation: H. Castan et al., Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride Al/SiNx : H/InP and Al/SiNx : H/In0.53Ga0.47As structures by DLTSand conductance transient techniques, MICROEL REL, 40(4-5), 2000, pp. 845-848
Authors:
Martinez, FL
del Prado, A
Martil, I
Bravo, D
Lopez, FJ
Citation: Fl. Martinez et al., Defect structure of SiNx : H films and its evolution with annealing temperature, J APPL PHYS, 88(4), 2000, pp. 2149-2151
Authors:
Blanco, MN
Redondo, E
Calle, F
Martil, I
Gonzalez-Diaz, G
Citation: Mn. Blanco et al., High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n(+)p junction devices, J APPL PHYS, 87(7), 2000, pp. 3478-3482
Authors:
San Andres, E
del Prado, A
Martinez, FL
Martil, I
Bravo, D
Lopez, FJ
Citation: E. San Andres et al., Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx : H films deposited by electron cyclotron resonance, J APPL PHYS, 87(3), 2000, pp. 1187-1192
Authors:
Duenas, S
Pelaez, R
Castan, E
Pinacho, R
Quintanilla, L
Barbolla, J
Martil, I
Redondo, E
Gonzalez-Diaz, G
Citation: S. Duenas et al., Electrical characterization of ECR enhaced deposited silicon nitride bilayers for high quality Al/SiNx/InP MIS structure fabrication, J MAT S-M E, 10(5-6), 1999, pp. 373-377
Authors:
Redondo, E
Blanco, N
Martil, I
Gonzalez-Diaz, G
Pelaez, R
Deunas, S
Castan, H
Citation: E. Redondo et al., Thermally induced improvements on SiNx : H/InP devices, J VAC SCI A, 17(4), 1999, pp. 2178-2182
Authors:
del Prado, A
Martinez, FL
Martil, I
Gonzalez-Diaz, G
Fernandez, M
Citation: A. Del Prado et al., Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance, J VAC SCI A, 17(4), 1999, pp. 1263-1268
Authors:
Martinez, FL
del Prado, A
Bravo, D
Lopez, F
Martil, I
Gonzalez-Diaz, G
Citation: Fl. Martinez et al., Thermal stability of a-SiNx : H films deposited by plasma electron cyclotron resonance, J VAC SCI A, 17(4), 1999, pp. 1280-1284
Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing
Authors:
Blanco, MN
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: Mn. Blanco et al., Gate quality of ex situ deposited Al/SiNx : H/n-In0.53Ga0.47As devices after rapid thermal annealing, SEMIC SCI T, 14(7), 1999, pp. 628-631
Authors:
Marquez, E
Bernal-Oliva, AM
Gonzalez-Leal, JM
Prieto-Alcon, R
Ledesma, A
Jimenez-Garay, R
Martil, I
Citation: E. Marquez et al., Optical-constant calculation of non-uniform thickness thin films of the Ge10As15Se75 chalcogenide glassy alloy in the sub-band-gap region (0.1-1.8 eV), MATER CH PH, 60(3), 1999, pp. 231-239
Authors:
Strass, A
Bieringer, P
Hansch, W
Fuenzalida, V
Alvarez, A
Luna, J
Martil, I
Martinez, FL
Eisele, I
Citation: A. Strass et al., Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry, THIN SOL FI, 349(1-2), 1999, pp. 135-146
Authors:
Martinez, FL
Martil, I
Gonzalez-Diaz, G
Bernal-Oliva, AM
Gonzalez-Leal, JM
Marquez, E
Citation: Fl. Martinez et al., Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing, THIN SOL FI, 344, 1999, pp. 433-436
Authors:
del Prado, A
Martil, I
Fernandez, M
Gonzalez-Diaz, G
Citation: A. Del Prado et al., Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature, THIN SOL FI, 344, 1999, pp. 437-440
Authors:
Martinez, FL
del Prado, A
Martil, I
Gonzalez-Diaz, G
Selle, B
Sieber, I
Citation: Fl. Martinez et al., Thermally induced changes in the optical properties of SiNx : H films deposited by the electron cyclotron resonance plasma method, J APPL PHYS, 86(4), 1999, pp. 2055-2061
Authors:
Pelaez, R
Castan, E
Duenas, S
Barbolla, J
Redondo, E
Martil, I
Gonzalez-Diaz, G
Citation: R. Pelaez et al., Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx : H/InP metal-insulator-semiconductor structures fabrication, J APPL PHYS, 86(12), 1999, pp. 6924-6930