Authors:
Mazur, YI
Tomm, JW
Petrov, V
Tarasov, GG
Kissel, H
Walther, C
Zhuchenko, ZY
Masselink, WT
Citation: Yi. Mazur et al., Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots, APPL PHYS L, 78(21), 2001, pp. 3214-3216
Authors:
Kissel, H
Muller, U
Walther, C
Masselink, WT
Mazur, YI
Tarasov, GG
Rud'ko, GY
Valakh, MY
Malyarchuk, V
Zhuchenko, ZY
Citation: H. Kissel et al., Intensity dependence of the Fermi edge singularity in photoluminescence from modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures, PHYS REV B, 61(12), 2000, pp. 8359-8362
Authors:
Walther, C
Blum, RP
Niehus, H
Thamm, A
Masselink, WT
Citation: C. Walther et al., Modified Fermi-level pinning of the (100) GaAs surface through InAs quantum dots in different stages of overgrowth, J ELEC MAT, 29(5), 2000, pp. 504-509
Authors:
Hoerstel, W
Kraak, W
Masselink, WT
Mazur, YI
Tarasov, GG
Zhuchenko, ZY
Citation: W. Hoerstel et al., Exchange interaction effect on oscillatory magnetoresistance in n-type Hg1-x-yCdxMnyTe near semimetal-semiconductor transition, SEMIC SCI T, 15(12), 2000, pp. 1119-1124
Authors:
Kissel, H
Muller, U
Walther, C
Masselink, WT
Mazur, YI
Tarasov, GG
Lisitsa, MP
Citation: H. Kissel et al., Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage, PHYS REV B, 62(11), 2000, pp. 7213-7218
Authors:
Tarasov, GG
Mazur, YI
Kuz'menko, EV
Belyaev, AE
Hoerstel, W
Kraak, W
Masselink, WT
Citation: Gg. Tarasov et al., Novel approach to description of optical and magnetotransport data in dilute magnetic semiconductors near semimetal-semiconductor transition, J CRYST GR, 214, 2000, pp. 436-440
Authors:
Walther, C
Hoerstel, W
Niehus, H
Erxmeyer, J
Masselink, WT
Citation: C. Walther et al., Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP, J CRYST GR, 209(4), 2000, pp. 572-580
Authors:
Iliadis, AA
Zahurak, JK
Neal, T
Masselink, WT
Citation: Aa. Iliadis et al., Lateral diffusion effects in AuGe based source-drain contacts to AlInAs/InGaAs/InP doped channel MODFETs, J ELEC MAT, 28(8), 1999, pp. 944-948
Authors:
Walther, C
Blum, RP
Niehus, H
Masselink, WT
Thamm, A
Citation: C. Walther et al., Modification of the Fermi-level pinning of GaAs surfaces through InAs quantum dots, PHYS REV B, 60(20), 1999, pp. R13962-R13965