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Results:
1-21
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Results: 21
Authors:
Hatami, F
Mussler, G
Schmidbauer, M
Masselink, WT
Schrottke, L
Hao, HY
Grahn, HT
Citation: F. Hatami et al., Optical emission from ultrathin strained type-II InP/GaP quantum wells, APPL PHYS L, 79(18), 2001, pp. 2886-2888
Authors:
Mazur, YI
Tomm, JW
Petrov, V
Tarasov, GG
Kissel, H
Walther, C
Zhuchenko, ZY
Masselink, WT
Citation: Yi. Mazur et al., Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots, APPL PHYS L, 78(21), 2001, pp. 3214-3216
Authors:
Hatami, F
Masselink, WT
Schrottke, L
Citation: F. Hatami et al., Radiative recombination from InP quantum dots on (100) GaP, APPL PHYS L, 78(15), 2001, pp. 2163-2165
Authors:
Kissel, H
Muller, U
Walther, C
Masselink, WT
Mazur, YI
Tarasov, GG
Rud'ko, GY
Valakh, MY
Malyarchuk, V
Zhuchenko, ZY
Citation: H. Kissel et al., Intensity dependence of the Fermi edge singularity in photoluminescence from modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures, PHYS REV B, 61(12), 2000, pp. 8359-8362
Authors:
Walther, C
Blum, RP
Niehus, H
Thamm, A
Masselink, WT
Citation: C. Walther et al., Modified Fermi-level pinning of the (100) GaAs surface through InAs quantum dots in different stages of overgrowth, J ELEC MAT, 29(5), 2000, pp. 504-509
Authors:
Hoerstel, W
Kraak, W
Masselink, WT
Mazur, YI
Tarasov, GG
Zhuchenko, ZY
Citation: W. Hoerstel et al., Exchange interaction effect on oscillatory magnetoresistance in n-type Hg1-x-yCdxMnyTe near semimetal-semiconductor transition, SEMIC SCI T, 15(12), 2000, pp. 1119-1124
Authors:
Kunets, VP
Kissel, H
Muller, U
Walther, C
Masselink, WT
Mazur, YI
Tarasov, GG
Zhuchenko, ZY
Lavoric, S
Valakh, MY
Citation: Vp. Kunets et al., Thickness dependence of disorder in pseudomorphic modulation-doped AlxGa1-xAs/InyGa1-yAs/GaAs heterostructures, SEMIC SCI T, 15(11), 2000, pp. 1035-1038
Authors:
Kissel, H
Muller, U
Walther, C
Masselink, WT
Mazur, YI
Tarasov, GG
Lisitsa, MP
Citation: H. Kissel et al., Size distribution in self-assembled InAs quantum dots on GaAs (001) for intermediate InAs coverage, PHYS REV B, 62(11), 2000, pp. 7213-7218
Authors:
Hatami, F
Muller, U
Kissel, H
Braune, K
Blum, RP
Rogaschewski, S
Niehus, H
Kirmse, H
Neumann, W
Schmidbauer, M
Kohler, R
Masselink, WT
Citation: F. Hatami et al., Planar ordering of InP quantum dots on (100)In0.48Ga0.52P, J CRYST GR, 216(1-4), 2000, pp. 26-32
Authors:
Tarasov, GG
Mazur, YI
Kuz'menko, EV
Belyaev, AE
Hoerstel, W
Kraak, W
Masselink, WT
Citation: Gg. Tarasov et al., Novel approach to description of optical and magnetotransport data in dilute magnetic semiconductors near semimetal-semiconductor transition, J CRYST GR, 214, 2000, pp. 436-440
Authors:
Walther, C
Hoerstel, W
Niehus, H
Erxmeyer, J
Masselink, WT
Citation: C. Walther et al., Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP, J CRYST GR, 209(4), 2000, pp. 572-580
Authors:
Tarasov, GG
Mazur, YI
Zhuchenko, ZY
Maassdorf, A
Nickel, D
Tomm, JW
Kissel, H
Walther, C
Masselink, WT
Citation: Gg. Tarasov et al., Carrier transfer in self-assembled coupled InAs/GaAs quantum dots, J APPL PHYS, 88(12), 2000, pp. 7162-7170
Authors:
Walther, C
Bollmann, J
Kissel, H
Kirmse, H
Neumann, W
Masselink, WT
Citation: C. Walther et al., Characterization of electron trap states due to InAs quantum dots in GaAs, APPL PHYS L, 76(20), 2000, pp. 2916-2918
Authors:
Walther, C
Bollmann, J
Kissel, H
Kirmse, H
Neumann, W
Masselink, WT
Citation: C. Walther et al., Non-exponential capture of electrons in GaAs with embedded InAs quantum dots, PHYSICA B, 274, 1999, pp. 971-975
Authors:
Katsikini, M
Bollmann, J
Masselink, WT
Paloura, EC
Citation: M. Katsikini et al., On the effect of ion implantation in the microstructure of GaN: an XAFS study, J SYNCHROTR, 6, 1999, pp. 552-554
Authors:
Walther, C
Herrmann, B
Hahnert, I
Neumann, W
Masselink, WT
Citation: C. Walther et al., Electrical transport in superlattices containing InAs quantum dots in GaAsand InP, SUPERLATT M, 25(1-2), 1999, pp. 53-56
Authors:
Katsikini, M
Paloura, EC
Bollmann, J
Holub-Krappe, E
Masselink, WT
Citation: M. Katsikini et al., Nitrogen K-edge X-ray absorption measurements on N- and O-implanted GaN, J ELEC SPEC, 103, 1999, pp. 689-694
Authors:
Iliadis, AA
Zahurak, JK
Neal, T
Masselink, WT
Citation: Aa. Iliadis et al., Lateral diffusion effects in AuGe based source-drain contacts to AlInAs/InGaAs/InP doped channel MODFETs, J ELEC MAT, 28(8), 1999, pp. 944-948
Authors:
Hoerstel, W
Kraak, W
Masselink, WT
Mazur, YI
Tarasov, GG
Belyaev, AE
Kuzmenko, EV
Citation: W. Hoerstel et al., Peculiarities of the exchange interaction in narrow-gap Hg1-x-yCdxMnySe, SEMIC SCI T, 14(9), 1999, pp. 820-828
Authors:
Walther, C
Blum, RP
Niehus, H
Masselink, WT
Thamm, A
Citation: C. Walther et al., Modification of the Fermi-level pinning of GaAs surfaces through InAs quantum dots, PHYS REV B, 60(20), 1999, pp. R13962-R13965
Authors:
Tarasov, GG
Rakitin, A
Mazur, YI
Tomm, JW
Masselink, WT
Citation: Gg. Tarasov et al., Phonon-assisted magnetopolaron effect in diluted magnetic semiconductors, PHYS REV B, 59(4), 1999, pp. 2731-2736
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