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Results:
1-14
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Results: 14
Authors:
Mawby, PA
Bassett, RJ
Citation: Pa. Mawby et Rj. Bassett, Recent advances in power semiconductor devices, IEE P-CIRC, 148(2), 2001, pp. 53-54
Authors:
Mawby, PA
Towers, MS
Citation: Pa. Mawby et Ms. Towers, Modelling of self-protected light-triggered thyristors, IEE P-CIRC, 148(2), 2001, pp. 55-63
Authors:
Igic, PM
Mawby, PA
Towers, MS
Batcup, S
Citation: Pm. Igic et al., Dynamic electro-thermal physically based compact models of the power devices for device and circuit simulations, P IEEE SEM, 2001, pp. 35-42
Authors:
Koh, A
Kestle, A
Wright, C
Wilks, SP
Mawby, PA
Bowen, WR
Citation: A. Koh et al., Comparative surface studies on wet and dry sacrificial thermal oxidation on silicon carbide, APPL SURF S, 174(3-4), 2001, pp. 210-216
Authors:
Mawby, PA
Igic, PM
Towers, MS
Citation: Pa. Mawby et al., Physically based compact device models for circuit modelling applications, MICROELEC J, 32(5-6), 2001, pp. 433-447
Authors:
Kestle, A
Koh, A
Wright, C
Wilks, SP
Mawby, PA
Bowen, WR
Citation: A. Kestle et al., Sacrificial Si and SiO2 layers as surface preparation technique for SiC, ELECTR LETT, 37(6), 2001, pp. 395-396
Authors:
Igic, PM
Mawby, PA
Citation: Pm. Igic et Pa. Mawby, Investigation of the thermal stress field in a multilevel aluminium metallisation in VLSI systems, MICROEL REL, 40(3), 2000, pp. 443-450
Authors:
Igic, PM
Mawby, PA
Citation: Pm. Igic et Pa. Mawby, An investigation of the impact of a Ti barrier metal on the thermal stressfield in passivated aluminium lines and vias in VLSI systems using finite element modelling approach, INT J ELECT, 87(11), 2000, pp. 1289-1299
Authors:
Manic, D
Igic, PM
Mawby, PA
Haddab, Y
Popovic, RS
Citation: D. Manic et al., Mechanical stress related instabilities in silicon under metal coverage, IEEE DEVICE, 47(12), 2000, pp. 2429-2437
Authors:
Kestle, A
Wilks, SP
Dunstan, PR
Pritchard, M
Mawby, PA
Citation: A. Kestle et al., Improved Ni/SiC Schottky diode formation, ELECTR LETT, 36(3), 2000, pp. 267-268
Authors:
Githiari, AN
Gordon, BM
McMahon, RA
Li, ZM
Mawby, PA
Citation: An. Githiari et al., A comparison of IGBT models for use in circuit design, IEEE POW E, 14(4), 1999, pp. 607-614
Authors:
Igic, PM
Mawby, PA
Citation: Pm. Igic et Pa. Mawby, Numerical modelling of stress-induced failure in sub-micron aluminium interconnects in VLSI systems, SOL ST ELEC, 43(2), 1999, pp. 255-261
Authors:
Elford, A
Mawby, PA
Citation: A. Elford et Pa. Mawby, The numerical modelling of silicon carbide high power semiconductor devices, MICROELEC J, 30(6), 1999, pp. 527-534
Authors:
Igic, PM
Mawby, PA
Citation: Pm. Igic et Pa. Mawby, An advanced finite element strategy for thermal stress field investigationin aluminium interconnections during processing of very large scale integration multilevel structures, MICROELEC J, 30(12), 1999, pp. 1207-1212
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