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Results: 1-25 | 26-35
Results: 1-25/35
Large spectral splitting of TE and TM components of QDs in a microcavity
Authors: Maximov, MV Krestnikov, IL Makarov, AG Zhukov, AE Maleev, NA Ustinov, VM Tsatsulnikov, AF Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Torres, CMS
Citation: Mv. Maximov et al., Large spectral splitting of TE and TM components of QDs in a microcavity, PHYS ST S-B, 224(3), 2001, pp. 811-814
Quantum dot lasers of NIR range based on GaAs
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Volovik, BV Musikhin, YG Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Alferov, ZI Ledentsov, NN Bimberg, D Lott, J
Citation: Vm. Ustinov et al., Quantum dot lasers of NIR range based on GaAs, IAN FIZ, 65(2), 2001, pp. 214-218
Electromagnetic theory of the coupling of zero-dimensional exciton and photon states: A quantum dot in a spherical microcavity - art. no. 115305
Authors: Kaliteevski, MA Brand, S Abram, RA Nikolaev, VV Maximov, MV Torres, CMS Kavokin, AV
Citation: Ma. Kaliteevski et al., Electromagnetic theory of the coupling of zero-dimensional exciton and photon states: A quantum dot in a spherical microcavity - art. no. 115305, PHYS REV B, 6411(11), 2001, pp. 5305
1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy
Authors: Ustinov, VM Zhukov, AE Maleev, NA Kovsh, AR Mikhrin, SS Volovik, BV Musikhin, YG Shernyakov, YM Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., 1.3 mu m InAs/GaAs quantum dot lasers and VCSELs grown by molecular beam epitaxy, J CRYST GR, 227, 2001, pp. 1155-1161
Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation
Authors: Maximov, MV Asryan, LV Shernyakov, YM Tsatsul'nikov, AF Kaiander, IN Nikolaev, VV Kovsh, AR Mikhrin, SS Ustinov, VM Zhukov, AE Alferov, ZI Ledenstov, NN Bimberg, D
Citation: Mv. Maximov et al., Gain and threshold characteristics of long wavelength lasers based on InAs/GaAs quantum dots formed by activated alloy phase separation, IEEE J Q EL, 37(5), 2001, pp. 676-683
Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications
Authors: Grundmann, M Heinrichsdorff, F Ledentsov, NN Ribbat, C Bimberg, D Zhukov, AE Kovsh, AR Maximov, MV Shernyakov, YM Lifshits, DA Ustinov, VM Alferov, ZI
Citation: M. Grundmann et al., Progress in quantum dot lasers: 1100 nm, 1300 nm, and high power applications, JPN J A P 1, 39(4B), 2000, pp. 2341-2343
Quantum-dot heterostructure lasers
Authors: Ledentsov, NN Grundmann, M Heinrichsdorff, F Bimberg, D Ustinov, VM Zhukov, AE Maximov, MV Alferov, ZI Lott, JA
Citation: Nn. Ledentsov et al., Quantum-dot heterostructure lasers, IEEE S T QU, 6(3), 2000, pp. 439-451
Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation
Authors: Maximov, MV Tsatsul'nikov, AF Sizov, DS Shernyakov, YM Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Alferov, ZI Ledentsov, NN Bimberg, D Maka, T Torres, CMS
Citation: Mv. Maximov et al., Carrier relaxation mechanisms and Fermi versus non-Fermi carrier distribution in quantum dot arrays formed by activated alloy phase separation, NANOTECHNOL, 11(4), 2000, pp. 309-313
Long-wavelength quantum dot lasers on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Mikhrin, SS Maleev, NA Volovik, BV Musikhin, YG Shernyakov, YM Kondat'eva, EY Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Alferov, ZI Lott, JA Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength quantum dot lasers on GaAs substrates, NANOTECHNOL, 11(4), 2000, pp. 397-400
GaAs-based 1.3 mu m InGaAs quantum dot lasers: A status report
Authors: Maximov, MV Ledentsov, NN Ustinov, VM Alferov, ZI Bimberg, D
Citation: Mv. Maximov et al., GaAs-based 1.3 mu m InGaAs quantum dot lasers: A status report, J ELEC MAT, 29(5), 2000, pp. 476-486
InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices
Authors: Maximov, MV Krestnikov, IL Shernyakov, YM Zhukov, AE Maleev, NA Musikhin, YG Ustinov, VM Alferov, ZI Chernyshov, AY Ledentsov, NN Bimberg, D Maka, T Torres, CMS
Citation: Mv. Maximov et al., InGaAs-GaAs quantum dots for application in long wavelength (1.3 mu m) resonant vertical cavity enhanced devices, J ELEC MAT, 29(5), 2000, pp. 487-493
1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition
Authors: Ledentsov, NN Maximov, MV Bimberg, D Maka, T Torres, CMS Kochnev, IV Krestnikov, IL Lantratov, VM Cherkashin, NA Musikhin, YM Alferov, ZI
Citation: Nn. Ledentsov et al., 1.3 mu m luminescence and gain from defect-free InGaAs-GaAs quantum dots grown by metal-organic chemical vapour deposition, SEMIC SCI T, 15(6), 2000, pp. 604-607
0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots
Authors: Mikhrin, SS Zhukov, AE Kovsh, AR Maleev, NA Ustinov, VM Shernyakov, YM Soshnikov, IP Livshits, DA Tarasov, IS Bedarev, DA Volovik, BV Maximov, MV Tsatsul'nikov, AF Ledentsov, NN Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ss. Mikhrin et al., 0.94 mu m diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots, SEMIC SCI T, 15(11), 2000, pp. 1061-1064
Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Bedarev, DA Shernyakov, YM Kaiander, IN Kondrat'eva, EY Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Ustinov, VM Musikhin, YG Kop'ev, PS Alferov, ZI Heitz, R Ledentsov, NN Bimberg, D
Citation: Mv. Maximov et al., Optical properties of quantum dots formed by activated spinodal decomposition for GaAs-based lasers emitting at similar to 1.3 mu m, MICROEL ENG, 51-2, 2000, pp. 61-72
Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors
Authors: Maximov, MV Tsatsul'nikov, AF Volovik, BV Sizov, DS Shernyakov, YM Kaiander, IN Zhukov, AE Kovsh, AR Mikhrin, SS Ustinov, VM Alferov, ZI Heitz, R Shchukin, VA Ledentsov, NN Bimberg, D Musikhin, YG Neumann, W
Citation: Mv. Maximov et al., Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors, PHYS REV B, 62(24), 2000, pp. 16671-16680
Exciton polaritons in a cylindrical microcavity with an embedded quantum wire
Authors: Kaliteevski, MA Brand, S Abram, RA Nikolaev, VV Maximov, MV Ledentsov, NN Torres, CMS Kavokin, AV
Citation: Ma. Kaliteevski et al., Exciton polaritons in a cylindrical microcavity with an embedded quantum wire, PHYS REV B, 61(20), 2000, pp. 13791-13797
Quantum dot lasers: breakthrough in optoelectronics
Authors: Bimberg, D Grundmann, M Heinrichsdorff, F Ledentsov, NN Ustinov, VM Zhukov, AE Kovsh, AR Maximov, MV Shernyakov, YM Volovik, BV Tsatsul'nikov, AF Kop'ev, PS Alferov, ZI
Citation: D. Bimberg et al., Quantum dot lasers: breakthrough in optoelectronics, THIN SOL FI, 367(1-2), 2000, pp. 235-249
Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates
Authors: Ustinov, VM Zhukov, AE Kovsh, AR Maleev, NA Mikhrin, SS Tsatsul'nikov, AF Maximov, MV Volovik, BV Bedarev, DA Kop'ev, PS Alferov, ZI Vorob'ev, LE Firsov, DA Suvorova, AA Soshnikov, IP Werner, P Ledentsov, NN Bimberg, D
Citation: Vm. Ustinov et al., Long-wavelength emission from self-organized InAs quantum dots on GaAs substrates, MICROELEC J, 31(1), 2000, pp. 1-7
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m
Authors: Lott, JA Ledentsov, NN Ustinov, VM Maleev, NA Zhukov, AE Kovsh, AR Maximov, MV Volovik, BV Alferov, ZI Bimberg, D
Citation: Ja. Lott et al., InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m, ELECTR LETT, 36(16), 2000, pp. 1384-1385
Heteroepitaxial growth of InAs on Si: a new type of quantum dot
Authors: Cyrlin, GE Petrov, VN Dubrovskii, VG Samsonenko, YB Polyakov, NK Golubok, AO Masalov, SA Komyak, NI Ustinov, VM Egorov, AY Kovsh, AR Maximov, MV Tsatsul'nikov, AF Volovik, BV Zhukov, AE Kop'ev, PS Ledentsov, NN Alferov, ZI Bimberg, D
Citation: Ge. Cyrlin et al., Heteroepitaxial growth of InAs on Si: a new type of quantum dot, SEMICONDUCT, 33(9), 1999, pp. 972-975
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Shernyakov, YM Mikhrin, SS Maleev, NA Kondrat'eva, EY Livshits, DA Maximov, MV Volovik, BV Bedarev, DA Musikhin, YG Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation: Ae. Zhukov et al., Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate, IEEE PHOTON, 11(11), 1999, pp. 1345-1347
Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition
Authors: Tsatsul'nikov, AF Volovik, BV Ledentsov, NN Maximov, MV Egorov, AY Kovsh, AR Ustinov, VM Zhukov, AE Kop'ev, PS Alferov, ZI Kozin, IA Belousov, MV Soshnikov, IP Werner, P Litvinov, D Fischer, U Rosenauer, A Gerthsen, D
Citation: Af. Tsatsul'Nikov et al., Lasing in structures with InAs quantum dots in an (Al,Ga)As matrix grown by submonolayer deposition, J ELEC MAT, 28(5), 1999, pp. 537-541
Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status
Authors: Zhukov, AE Ustinov, VM Kovsh, AR Egorov, AY Maleev, NA Ledentsov, NN Tsatsul'nikov, AF Maximov, MV Musikhin, YG Bert, NA Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ae. Zhukov et al., Control of the emission wavelength of self-organized InGaAs quantum dots: main achievements and present status, SEMIC SCI T, 14(6), 1999, pp. 575-581
Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser
Authors: Ledentsov, NN Bimberg, D Ustinov, VM Maximov, MV Alferov, ZI Kalosha, VP Lott, JA
Citation: Nn. Ledentsov et al., Interconnection between gain spectrum and cavity mode in a quantum-dot vertical-cavity laser, SEMIC SCI T, 14(1), 1999, pp. 99-102
Gain characteristics of quantum dot injection lasers
Authors: Zhukov, AE Kovsh, AR Ustinov, VM Egorov, AY Ledentsov, NN Tsatsul'nikov, AF Maximov, MV Shernyakov, YM Kopchatov, VI Lunev, AV Kop'ev, PS Bimberg, D Alferov, ZI
Citation: Ae. Zhukov et al., Gain characteristics of quantum dot injection lasers, SEMIC SCI T, 14(1), 1999, pp. 118-123
Risultati: 1-25 | 26-35