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Results: 1-25 | 26-26
Results: 1-25/26
Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy
Authors: Preisler, EJ Marsh, OJ Beach, RA McGill, TC
Citation: Ej. Preisler et al., Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy, J VAC SCI B, 19(4), 2001, pp. 1611-1618
Fabrication of GaN suspended microstructures
Authors: Strittmatter, RP Beach, RA McGill, TC
Citation: Rp. Strittmatter et al., Fabrication of GaN suspended microstructures, APPL PHYS L, 78(21), 2001, pp. 3226-3228
Nickel layers on indium arsenide
Authors: Hill, CJ Beach, RA McGill, TC
Citation: Cj. Hill et al., Nickel layers on indium arsenide, J VAC SCI B, 18(4), 2000, pp. 2044-2046
The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices
Authors: Bandic, ZZ Bridger, PM Piquette, EC McGill, TC
Citation: Zz. Bandic et al., The values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices, SOL ST ELEC, 44(2), 2000, pp. 221-228
Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer
Authors: Cheng, XC McGill, TC
Citation: Xc. Cheng et Tc. Mcgill, Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer, J CRYST GR, 208(1-4), 2000, pp. 183-188
Tunnel switch diode based an AlSb/GaSb heterojunctions
Authors: Cheng, XC Cartoixa, X Barton, MA Hill, CJ McGill, TC
Citation: Xc. Cheng et al., Tunnel switch diode based an AlSb/GaSb heterojunctions, J APPL PHYS, 88(11), 2000, pp. 6948-6950
Strain in wet thermally oxidized square and circular mesas
Authors: Alonzo, AC Cheng, XC McGill, TC
Citation: Ac. Alonzo et al., Strain in wet thermally oxidized square and circular mesas, J APPL PHYS, 87(9), 2000, pp. 4594-4599
Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode
Authors: Daniel, ES Cartoixa, X Frensley, WR Ting, DZY McGill, TC
Citation: Es. Daniel et al., Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode, IEEE DEVICE, 47(5), 2000, pp. 1052-1060
Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain
Authors: Bridger, PM Bandic, ZZ Piquette, EC McGill, TC
Citation: Pm. Bridger et al., Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain, J VAC SCI B, 17(4), 1999, pp. 1750-1752
Piezoelectric fields in nitride devices
Authors: Beach, RA McGill, TC
Citation: Ra. Beach et Tc. Mcgill, Piezoelectric fields in nitride devices, J VAC SCI B, 17(4), 1999, pp. 1753-1756
Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire
Authors: Piquette, EC Bridger, PM Bandic, ZZ McGill, TC
Citation: Ec. Piquette et al., Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire, J VAC SCI B, 17(3), 1999, pp. 1241-1245
Nanoscale optical imaging of chromosomes with apertureless microscopy
Authors: Bridger, PM McGill, TC
Citation: Pm. Bridger et Tc. Mcgill, Nanoscale optical imaging of chromosomes with apertureless microscopy, SCANNING, 21(4), 1999, pp. 229-231
Observation of nanometer scale optical property discrimination using a near-field scanning apertureless microscope
Authors: Bridger, PM McGill, TC
Citation: Pm. Bridger et Tc. Mcgill, Observation of nanometer scale optical property discrimination using a near-field scanning apertureless microscope, SCANNING, 21(2), 1999, pp. 74-74
Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain
Authors: Bridger, PM Bandic, ZZ Piquette, EC McGill, TC
Citation: Pm. Bridger et al., Electric force microscopy of induced charges and surface potentials in GaNmodified by light and strain, SCANNING, 21(2), 1999, pp. 78-79
Observation of nanometer-scale optical property discrimination by use of anear-field scanning apertureless microscope
Authors: Bridger, PM McGill, TC
Citation: Pm. Bridger et Tc. Mcgill, Observation of nanometer-scale optical property discrimination by use of anear-field scanning apertureless microscope, OPTICS LETT, 24(15), 1999, pp. 1005-1007
Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSbsuperlattice gain layers
Authors: Cheng, XC McGill, TC
Citation: Xc. Cheng et Tc. Mcgill, Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSbsuperlattice gain layers, J APPL PHYS, 86(8), 1999, pp. 4576-4579
The role of materials in the electronics world of 2012 AD: An update
Authors: McGill, TC
Citation: Tc. Mcgill, The role of materials in the electronics world of 2012 AD: An update, P IEEE, 87(5), 1999, pp. 924-926
Testing of resonant tunneling double barrier heterostructures by BEEM BEES
Authors: Walachova, J Zelinka, J Vanis, J Karamazov, S Cukr, M Zich, P Chow, DH McGill, TC
Citation: J. Walachova et al., Testing of resonant tunneling double barrier heterostructures by BEEM BEES, CZEC J PHYS, 49(5), 1999, pp. 833-836
Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy
Authors: Jones, JT Bridger, PM Marsh, OJ McGill, TC
Citation: Jt. Jones et al., Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy, APPL PHYS L, 75(9), 1999, pp. 1326-1328
Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment
Authors: Hill, CJ Bridger, PM Picus, GS McGill, TC
Citation: Cj. Hill et al., Scanning apertureless microscopy below the diffraction limit: Comparisons between theory and experiment, APPL PHYS L, 75(25), 1999, pp. 4022-4024
High voltage (450 V) GaN schottky rectifiers
Authors: Bandic, ZZ Bridger, PM Piquette, EC McGill, TC Vaudo, RP Phanse, VM Redwing, JM
Citation: Zz. Bandic et al., High voltage (450 V) GaN schottky rectifiers, APPL PHYS L, 74(9), 1999, pp. 1266-1268
Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy
Authors: Bridger, PM Bandic, ZZ Piquette, EC McGill, TC
Citation: Pm. Bridger et al., Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy, APPL PHYS L, 74(23), 1999, pp. 3522-3524
Nitride based high power devices: Design and fabrication issues
Authors: Bandic, ZZ Piquette, EC Bridger, PM Beach, RA Kuech, TF McGill, TC
Citation: Zz. Bandic et al., Nitride based high power devices: Design and fabrication issues, SOL ST ELEC, 42(12), 1998, pp. 2289-2294
Effect of cylindrical geometry on the wet thermal oxidation of AlAs
Authors: Alonzo, AC Cheng, XC McGill, TC
Citation: Ac. Alonzo et al., Effect of cylindrical geometry on the wet thermal oxidation of AlAs, J APPL PHYS, 84(12), 1998, pp. 6901-6905
Probing of InAs/AlSb double barrier heterostructures by ballistic electronemission spectroscopy (vol 70, pg 3588, 1997)
Authors: Walachova, J Zelinka, J Vanis, J Chow, DH Schulman, JN Karamazov, S Cukr, M Zich, P Krai, J McGill, TC
Citation: J. Walachova et al., Probing of InAs/AlSb double barrier heterostructures by ballistic electronemission spectroscopy (vol 70, pg 3588, 1997), APPL PHYS L, 73(24), 1998, pp. 3612-3612
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