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Results: 1-11 |
Results: 11
Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing
Authors: Milenin, VV Konakova, RV
Citation: Vv. Milenin et Rv. Konakova, Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing, TECH PHYS L, 27(7), 2001, pp. 586-588
Analytical, optical and electrophysical investigations of TiBx-GaAs interface
Authors: Dmitruk, NL Ermolovich, IB Fursenko, OV Konakova, RV Milenin, VV Voitsikhovskyi, DI Yastrubchak, OB
Citation: Nl. Dmitruk et al., Analytical, optical and electrophysical investigations of TiBx-GaAs interface, SURF SCI, 482, 2001, pp. 928-934
The formation and thermal stability of multilayer ohmic contacts to n-GaAswith TiBx and Mo diffusion barriers
Authors: Milenin, VV Konakova, RV Ivanov, VN Beketov, GV Poludin, VI Ermolovich, IB
Citation: Vv. Milenin et al., The formation and thermal stability of multilayer ohmic contacts to n-GaAswith TiBx and Mo diffusion barriers, TECH PHYS, 45(11), 2000, pp. 1452-1456
On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts
Authors: Dmitruk, NL Ermolovich, IB Konakova, RV Lytvyn, OS Lytvyn, PM Milenin, VV Prokopenko, IV Venger, EF Voitsikhovskyi, DI Boltovets, NS Ivanov, VN
Citation: Nl. Dmitruk et al., On the nature of transition layer and heat tolerance of TiBx/GaAs-based contacts, APPL SURF S, 166(1-4), 2000, pp. 520-525
Effect of gamma-radiation of Co-60 on electrophysical properties of GaAs Schottky field transistors
Authors: Konakova, RV Milenin, VV Solovev, EA Statov, VA Stovpovoi, MA Rengevich, AE Prokopenko, IV Tarielashvili, GT
Citation: Rv. Konakova et al., Effect of gamma-radiation of Co-60 on electrophysical properties of GaAs Schottky field transistors, IVUZ RADIO, 43(5-6), 2000, pp. A45-A52
Nature of the transitional region during the deposition of titanium borideand nitride films on gallium arsenide
Authors: Ermolovich, IB Konakova, RV Milenin, VV Senkevich, AI
Citation: Ib. Ermolovich et al., Nature of the transitional region during the deposition of titanium borideand nitride films on gallium arsenide, TECH PHYS L, 25(10), 1999, pp. 789-791
Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide
Authors: Venger, EF Milenin, VV Ermolovich, IB Konakova, RV Ivanov, VN Voitsikhovskii, DI
Citation: Ef. Venger et al., Formation and thermal stability of contacts based on titanium borides and titanium nitrides with gallium arsenide, SEMICONDUCT, 33(8), 1999, pp. 865-869
The effect of structural-phase transitions in metalization layers on radiation stability of NbNx-GaAs contacts
Authors: Belyaev, AA Konakova, RV Milenin, VV Hotovy, I Piaczenski, G
Citation: Aa. Belyaev et al., The effect of structural-phase transitions in metalization layers on radiation stability of NbNx-GaAs contacts, J KOR PHYS, 34, 1999, pp. S443-S446
Reactions between phases and electronic processes at the TiBx (TiNx)-GaAs heterostructures interfaces
Authors: Milenin, VV Ermolovich, IB Konakova, RV Lyapin, VG Belyaev, AA Voitsikhovskiy, DI Smijan, OD Ivanov, VN Boltovets, NS
Citation: Vv. Milenin et al., Reactions between phases and electronic processes at the TiBx (TiNx)-GaAs heterostructures interfaces, J KOR PHYS, 34, 1999, pp. S447-S450
Effect of the radiation on voltametric characteristics of arsenide-galliumfield transistors with Schottky barrier
Authors: Konakova, RV Milenin, VV Solovev, EA Statov, VA Stovpovoi, MA Rengevich, AE Tarielashvili, GT
Citation: Rv. Konakova et al., Effect of the radiation on voltametric characteristics of arsenide-galliumfield transistors with Schottky barrier, IVUZ RADIO, 42(3-4), 1999, pp. A73-A76
Influence of microwave treatment on the electrophysical characteristics oftechnically important semiconductors and surface-barrier structures
Authors: Belyaev, AA Belyaev, AE Ermolovich, IB Komirenko, SM Konakova, RV Lyapin, VG Milenin, VV Solov'ev, EA Shevelev, MV
Citation: Aa. Belyaev et al., Influence of microwave treatment on the electrophysical characteristics oftechnically important semiconductors and surface-barrier structures, TECH PHYS, 43(12), 1998, pp. 1445-1449
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