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Results: 1-25/29
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Yankov, RA
Rebohle, L
Skorupa, W
Citation: Ie. Tyschenko et al., Study of photoluminescence of SiOxNy films implanted with Ge+ ions and annealed under the conditions of hydrostatic pressure, SEMICONDUCT, 35(2), 2001, pp. 125-131
Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure
Authors:
Emtsev, VV
Ammerlaan, CAJ
Andreev, BA
Emtsev, VV
Oganesyan, GA
Misiuk, A
Londos, CA
Citation: Vv. Emtsev et al., Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure, J MAT S-M E, 12(4-6), 2001, pp. 223-225
Authors:
Misiuk, A
Bak-Misiuk, J
Antonova, IV
Raineri, V
Romano-Rodriguez, A
Bachrouri, A
Surma, HB
Ratajczak, J
Katcki, J
Adamczewska, J
Neustroev, EP
Citation: A. Misiuk et al., Effect of uniform stress on silicon implanted with helium, hydrogen and oxygen, COMP MAT SC, 21(4), 2001, pp. 515-525
Authors:
Misiuk, A
Surma, HB
Bak-Misiuk, J
Lopez, M
Romano-Rodriguez, A
Hartwig, J
Citation: A. Misiuk et al., Microstructure of Czochralski silicon annealed at enhanced stress conditions, J ALLOY COM, 328(1-2), 2001, pp. 90-96
Authors:
Bak-Misiuk, J
Antonova, IV
Misiuk, A
Domagala, J
Popov, VP
Obodnikov, VI
Hartwig, J
Romano-Rodriguez, A
Citation: J. Bak-misiuk et al., Strain in hydrogen and oxygen implanted silicon and SOI structures annealed at high pressure, J ALLOY COM, 328(1-2), 2001, pp. 181-186
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Misiuk, A
Rebohle, L
Skorupa, W
Yankov, RA
Popov, VP
Citation: Ie. Tyschenko et al., Enhancement of the intensity of violet and green photoluminescence from Ge+ ion-implanted SiOxNy films caused by hydrostatic pressure during annealing, OPT MATER, 17(1-2), 2001, pp. 99-102
Authors:
Misiuk, A
Bak-Misiuk, J
Barez, A
Romano-Rodriguez, A
Antonova, IV
Popov, VP
Londos, CA
Jun, J
Citation: A. Misiuk et al., Effect of annealing at argon pressure up to 1.2 GPa hydrogen-plasma-etchedand hydrogen-implanted single-crystalline silicon, INT J HYD E, 26(5), 2001, pp. 483-488
Authors:
Misiuk, A
Barcz, A
Ratajczak, J
Katcki, J
Bak-Misiuk, J
Bryja, L
Surma, B
Gawlik, G
Citation: A. Misiuk et al., Structure of oxygen - Implanted silicon single crystals treated at >= 1400K under high argon pressure, CRYST RES T, 36(8-10), 2001, pp. 933-941
Authors:
Surma, B
Bryja, L
Misiuk, A
Gawlik, G
Jun, J
Antonova, IV
Prujszczyk, M
Citation: B. Surma et al., Infrared and photoluminescence studies on silicon oxide formation in oxygen-implanted silicon annealed under enhanced pressure, CRYST RES T, 36(8-10), 2001, pp. 943-952
Authors:
Bak-Misiuk, J
Dynowska, E
Misiuk, A
Calamiotou, M
Kozanecki, A
Domagala, J
Kuristyn, D
Glukhanyuk, W
Georgakilas, A
Trela, J
Adamczewska, J
Citation: J. Bak-misiuk et al., Effect of high temperature-pressure on GaAs layers grown on vicinal Si substrates, CRYST RES T, 36(8-10), 2001, pp. 997-1003
Authors:
Tyschenko, IE
Zhuravlev, KS
Vandyshev, EN
Rebohle, L
Misiuk, A
Yankov, RA
Skorupa, W
Citation: Ie. Tyschenko et al., Visible photoluminescence from germanium-implanted silicon oxynitride films after annealing under hydrostatic pressure, DEFECT DIFF, 186-1, 2000, pp. 71-77
Authors:
Misiuk, A
Barcz, A
Ratajczak, J
Lopez, M
Romano-Rodriguez, A
Bak-Misiuk, J
Surma, HB
Jun, J
Antonova, IV
Popov, VP
Citation: A. Misiuk et al., Effect of external stress on creation of buried SiO2 layer in silicon implanted with oxygen, MAT SCI E B, 73(1-3), 2000, pp. 134-138
Authors:
Romano-Rodriguez, A
Bachrouri, A
Lopez, M
Morante, JR
Misiuk, A
Surma, B
Jun, J
Citation: A. Romano-rodriguez et al., TEM characterisation of high pressure-high-temperature-treated Czochralskisilicon samples, MAT SCI E B, 73(1-3), 2000, pp. 250-254
Authors:
Neustroev, EP
Antonova, IV
Popov, VP
Kilanov, DV
Misiuk, A
Citation: Ep. Neustroev et al., Enhanced formation of thermal donors in oxygen-implanted silicon annealed at different pressures, PHYSICA B, 293(1-2), 2000, pp. 44-48
Authors:
Bak-Misiuk, J
Domagala, J
Misiuk, A
Sadowski, J
Zytkiewicz, ZR
Trela, J
Antonova, IV
Citation: J. Bak-misiuk et al., Effect of stress on interface transformation in thin semiconducting layers, THIN SOL FI, 380(1-2), 2000, pp. 117-119
Authors:
Misiuk, A
Surma, HB
Bak-Misiuk, J
Romano-Rodriguez, A
Wnuk, A
Brzozowski, A
Bachrouri, A
Barcz, A
Citation: A. Misiuk et al., Photoluminescence of porous silicon prepared from pressure treated Cz-Si, PHYS ST S-A, 182(1), 2000, pp. 401-406
Authors:
Misiuk, A
Iller, A
Rebohle, L
Lukaszewicz, M
Kudla, A
Citation: A. Misiuk et al., Photoluminescence from pressure-annealed silicon dioxide and nitride films, MICROEL REL, 40(4-5), 2000, pp. 881-884
Authors:
Antonova, IV
Misiuk, A
Bak-Misiuk, J
Popov, VP
Plotnikov, AE
Surma, B
Citation: Iv. Antonova et al., Dependence of oxygen precipitate size and strain on external stress at annealing of Cz-Si, J ALLOY COM, 286(1-2), 1999, pp. 241-245
Authors:
Auleytner, J
Datsenko, L
Klad'ko, V
Machulin, V
Melnyk, V
Prokopenko, I
Bak-Misiuk, J
Misiuk, A
Citation: J. Auleytner et al., Influence of hydrostatic pressure at the temperatures about 1500 K on defect structure of Czochralski silicon, J ALLOY COM, 286(1-2), 1999, pp. 246-249
Authors:
Dzelme, J
Ertsinsh, I
Zapol, B
Misiuk, A
Citation: J. Dzelme et al., Structure and diffusion of oxygen and silicon interstitials in silicon, J ALLOY COM, 286(1-2), 1999, pp. 254-257
Authors:
Misiuk, A
Surma, HB
Jun, J
Bak-Misiuk, J
Domagala, J
Antonova, IV
Popov, VP
Romano-Rodriguez, A
Lopez, M
Citation: A. Misiuk et al., Dependence of photoluminescence of silicon on conditions of pressure-annealing, J ALLOY COM, 286(1-2), 1999, pp. 258-264
Authors:
Bak-Misiuk, J
Adamczewska, J
Domagala, J
Zytkiewicz, ZR
Trela, J
Misiuk, A
Leszczynski, M
Jun, J
Surma, HB
Wnuk, A
Citation: J. Bak-misiuk et al., Influence of high hydrostatic pressure-high temperature treatment on defect structure of AlGaAs layers, J ALLOY COM, 286(1-2), 1999, pp. 279-283
Authors:
Karwasz, GP
Brusa, RS
Misiuk, A
Zecca, A
Citation: Gp. Karwasz et al., Positron annihilation studies of Czochralski-grown silicon annealed under pressure, ACT PHY P A, 95(4), 1999, pp. 575-580
Authors:
Misiuk, A
Surma, B
Rebohle, L
Jun, J
Antonova, IV
Tyschenko, I
Romano-Rodriguez, A
Lopez, M
Citation: A. Misiuk et al., Luminescence properties of oxygen-containing silicon annealed at enhanced argon pressure, PHYS ST S-B, 211(1), 1999, pp. 233-238
Authors:
Surma, B
Wnuk, A
Misiuk, A
Brzozowski, A
Pawlowska, M
Franz, M
Jun, J
Rozental, M
Nossarzewska-Orlowska, E
Citation: B. Surma et al., Photoluminescence from porous structures prepared by anodization of annealed Cz-Si, CRYST RES T, 34(5-6), 1999, pp. 689-697