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Results: 1-25 | 26-27
Results: 1-25/27
Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy
Authors: Cho, HM Lee, YW Lee, IW Moon, DW Kim, BY Kim, HJ Kim, SY Cho, YJ
Citation: Hm. Cho et al., Comparison of the effective oxide thickness determined by ellipsometry with the result by medium energy ion scattering spectroscopy and high-resolution transmission electron microscopy, J VAC SCI B, 19(4), 2001, pp. 1144-1149
Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs inGaAs using the mixing-roughness-information depth model
Authors: Hofmann, S Rar, A Moon, DW Yoshihara, K
Citation: S. Hofmann et al., Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs inGaAs using the mixing-roughness-information depth model, J VAC SCI A, 19(4), 2001, pp. 1111-1115
Estimation of the electronic straggling using delta-doped multilayers
Authors: Moon, DW Lee, HI Kim, KJ Nishimura, T Kido, Y
Citation: Dw. Moon et al., Estimation of the electronic straggling using delta-doped multilayers, NUCL INST B, 183(1-2), 2001, pp. 10-15
Compositional changes in the surface layers of the Cu3Au(100) below the bulk transition temperature
Authors: Oh, DH Kang, HJ Chae, KH Whang, CN King, BV O'Connor, DJ Moon, DW
Citation: Dh. Oh et al., Compositional changes in the surface layers of the Cu3Au(100) below the bulk transition temperature, SURF SCI, 477(2-3), 2001, pp. L289-L294
Structure of the Ba-induced Si(111)-(3 x 2) reconstruction - art. no. 056104
Authors: Lee, G Hong, SL Kim, H Shin, DS Koo, JY Lee, HI Moon, DW
Citation: G. Lee et al., Structure of the Ba-induced Si(111)-(3 x 2) reconstruction - art. no. 056104, PHYS REV L, 8705(5), 2001, pp. 6104
Atomic scale investigations of the Co/Pt(111) interface structure and magnetic properties
Authors: Moon, DW Ha, YH Park, Y Lee, JW Kim, J Shin, SC
Citation: Dw. Moon et al., Atomic scale investigations of the Co/Pt(111) interface structure and magnetic properties, APPL PHYS L, 79(4), 2001, pp. 503-505
Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers
Authors: Ha, YH Kim, S Moon, DW Jhe, JH Shin, JH
Citation: Yh. Ha et al., Er3+ photoluminescence properties of erbium-doped Si/SiO2 superlattices with subnanometer thin Si layers, APPL PHYS L, 79(3), 2001, pp. 287-289
Dry thermal oxidation of a graded SiGe layer
Authors: Lim, YS Jeong, JS Lee, JY Kim, HS Shon, HK Kim, HK Moon, DW
Citation: Ys. Lim et al., Dry thermal oxidation of a graded SiGe layer, APPL PHYS L, 79(22), 2001, pp. 3606-3608
Strained Ge overlayer on a Si(001)-(2X1) surface
Authors: Kahng, SJ Ha, YH Moon, DW Kuk, Y
Citation: Sj. Kahng et al., Strained Ge overlayer on a Si(001)-(2X1) surface, PHYS REV B, 61(16), 2000, pp. 10827-10831
Lattice location and damage distribution in MeV as implanted Si(100) crystals
Authors: Kuri, G Moon, DW
Citation: G. Kuri et Dw. Moon, Lattice location and damage distribution in MeV as implanted Si(100) crystals, RADIAT EFF, 152(2), 2000, pp. 139-156
Intermixing in Stranski-Krastanov germanium overlayer on Si(100)
Authors: Kahng, SJ Ha, YH Moon, DW Kuk, Y
Citation: Sj. Kahng et al., Intermixing in Stranski-Krastanov germanium overlayer on Si(100), J VAC SCI A, 18(4), 2000, pp. 1937-1940
Ultrashallow P+/N junction formation by plasma ion implantation
Authors: Baek, SK Choi, CJ Seong, TY Hwang, H Moon, DW Kim, HK
Citation: Sk. Baek et al., Ultrashallow P+/N junction formation by plasma ion implantation, J KOR PHYS, 37(6), 2000, pp. 912-914
Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin films
Authors: Moon, DW Kim, KJ Park, Y Kim, HK Ha, YH Kang, HJ
Citation: Dw. Moon et al., Medium-energy ion scattering spectroscopy for quantitative surface and near-surface analysis of ultrathin films, SURF INT AN, 30(1), 2000, pp. 484-487
GaAs delta-doped layers in Si for evaluation of SIMS depth resolution
Authors: Moon, DW Won, JY Kim, KJ Kim, HJ Kang, HJ Petravic, M
Citation: Dw. Moon et al., GaAs delta-doped layers in Si for evaluation of SIMS depth resolution, SURF INT AN, 29(6), 2000, pp. 362-368
Microhardness variations in HSLA-100 welds fabricated with new ultra-low-carbon weld consumables
Authors: Moon, DW Fonda, RW Spanos, G
Citation: Dw. Moon et al., Microhardness variations in HSLA-100 welds fabricated with new ultra-low-carbon weld consumables, WELDING J, 79(10), 2000, pp. 278S-285S
Formation of a highly oriented FeO thin film by phase transition of Fe3O4 and Fe nanocrystallines
Authors: Kim, KJ Moon, DW Lee, SK Jung, KH
Citation: Kj. Kim et al., Formation of a highly oriented FeO thin film by phase transition of Fe3O4 and Fe nanocrystallines, THIN SOL FI, 360(1-2), 2000, pp. 118-121
Characterization of sub-30 nm p(+)/n junction formed by plasma ion implantation
Authors: Baek, SK Choi, CJ Seong, TY Hwang, H Kim, HK Moon, DW
Citation: Sk. Baek et al., Characterization of sub-30 nm p(+)/n junction formed by plasma ion implantation, J ELCHEM SO, 147(8), 2000, pp. 3091-3093
Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant
Authors: Kahng, SJ Ha, YH Moon, DW Kuk, Y
Citation: Sj. Kahng et al., Segregation of Si in Ge overlayers grown on Si(100) with hydrogen surfactant, APPL PHYS L, 77(7), 2000, pp. 981-983
Strain-induced diffusion in a strained Si1-xGex/Si heterostructure
Authors: Lim, YS Lee, JY Kim, HS Moon, DW
Citation: Ys. Lim et al., Strain-induced diffusion in a strained Si1-xGex/Si heterostructure, APPL PHYS L, 77(25), 2000, pp. 4157-4159
Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone
Authors: Kurokawa, A Nakamura, K Ichimura, S Moon, DW
Citation: A. Kurokawa et al., Reduction of the interfacial Si displacement of ultrathin SiO2 on Si(100) formed by atmospheric-pressure ozone, APPL PHYS L, 76(4), 2000, pp. 493-495
Er-carrier interaction and its effects on the Er3+ luminescence of erbium-doped Si/SiO2 superlattices
Authors: Shin, JH Jhe, JH Seo, SY Ha, YH Moon, DW
Citation: Jh. Shin et al., Er-carrier interaction and its effects on the Er3+ luminescence of erbium-doped Si/SiO2 superlattices, APPL PHYS L, 76(24), 2000, pp. 3567-3569
Ultraviolet-ozone jet cleaning process of organic surface contamination layers
Authors: Moon, DW Kurokawa, A Ichimura, S Lee, HW Jeon, IC
Citation: Dw. Moon et al., Ultraviolet-ozone jet cleaning process of organic surface contamination layers, J VAC SCI A, 17(1), 1999, pp. 150-154
Interfacial reaction of Co on Si(100) by using medium-energy ion-scattering spectroscopy and X-ray photoelectron spectroscopy
Authors: Nam, J Hwang, IY Kim, JH Kang, HJ Ha, YH Moon, DW O'Connor, DJ MacDonald, RJ
Citation: J. Nam et al., Interfacial reaction of Co on Si(100) by using medium-energy ion-scattering spectroscopy and X-ray photoelectron spectroscopy, J KOR PHYS, 35, 1999, pp. S546-S549
Low sputter damage of metal single crystalline surfaces investigated with medium energy ion scattering spectroscopy
Authors: Moon, DW Ha, YH Kim, HK Kim, KJ Kim, HS Lee, JY Kim, S
Citation: Dw. Moon et al., Low sputter damage of metal single crystalline surfaces investigated with medium energy ion scattering spectroscopy, APPL SURF S, 150(1-4), 1999, pp. 235-243
Dynamic Monte Carlo simulation for SIMS depth profiling of delta-doped layer
Authors: Kang, HJ Kim, WS Moon, DW Lee, HY Kang, ST Shimizu, R
Citation: Hj. Kang et al., Dynamic Monte Carlo simulation for SIMS depth profiling of delta-doped layer, NUCL INST B, 153(1-4), 1999, pp. 429-435
Risultati: 1-25 | 26-27