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Results: 1-19 |
Results: 19
INDUCED PHOTOPLEOCHROISM OF P-GAALAS P-N-GAAS STRUCTURES/
Authors: BERDINOBATOV A NAZAROV N SARKISOVA VM RUD VY RUD YV
Citation: A. Berdinobatov et al., INDUCED PHOTOPLEOCHROISM OF P-GAALAS P-N-GAAS STRUCTURES/, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 642-645
TUNNEL EXCESS CURRENT IN NONDEGENERATE BARRIER (P-N AND M-S) SILICON-CONTAINING III-V STRUCTURES
Authors: EVSTROPOV VV ZHILYAEV YV DZHUMAEVA M NAZAROV N
Citation: Vv. Evstropov et al., TUNNEL EXCESS CURRENT IN NONDEGENERATE BARRIER (P-N AND M-S) SILICON-CONTAINING III-V STRUCTURES, Semiconductors, 31(2), 1997, pp. 115-120
EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SADOFEV YG TOPCHII AN FALEEV NN FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., EPITAXIAL GAAS P-N STRUCTURES ON SI SUBSTRATES - ELECTRICAL, PHOTOELECTRIC, AND ELECTROLUMINESCENCE PROPERTIES, Semiconductors, 29(3), 1995, pp. 195-198
PHOTOSENSITIVITY OF P-NGAAS-N-GAP N-SI HE TEROSTRUCTURES IN LINEARLY-POLARIZED EMISSION/
Authors: ZHILYAEV YV NAZAROV N RUD VY RUD YV TOPCHII AN
Citation: Yv. Zhilyaev et al., PHOTOSENSITIVITY OF P-NGAAS-N-GAP N-SI HE TEROSTRUCTURES IN LINEARLY-POLARIZED EMISSION/, Zurnal tehniceskoj fiziki, 65(1), 1995, pp. 91-98
PHOTOSENSITIVITY AND INDUCED PHOTOPLEOCHROISM OF AU-N-GAP P-SI 2-BARRIER STRUCTURES/
Authors: ZHILYAEV YV MELEBAEV D NAZAROV N RUD VY RUD YV
Citation: Yv. Zhilyaev et al., PHOTOSENSITIVITY AND INDUCED PHOTOPLEOCHROISM OF AU-N-GAP P-SI 2-BARRIER STRUCTURES/, Semiconductors, 28(2), 1994, pp. 126-128
PHOTOELECTRIC PROPERTIES OF SURFACE-BARRIER AU-N-GAP STRUCTURES ON SISUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV LIPKO AL MYNBAEVA MG NAZAROV N FEDOROV LM
Citation: Vv. Evstropov et al., PHOTOELECTRIC PROPERTIES OF SURFACE-BARRIER AU-N-GAP STRUCTURES ON SISUBSTRATES, Semiconductors, 28(2), 1994, pp. 213-214
PHOTOELECTRIC PROPERTIES OF P-GAAS N-GE STRUCTURES IN LINEARLY POLARIZED-LIGHT/
Authors: ZHILYAEV YV NAZAROV N RUD VY RUD YV FEDOROV LM
Citation: Yv. Zhilyaev et al., PHOTOELECTRIC PROPERTIES OF P-GAAS N-GE STRUCTURES IN LINEARLY POLARIZED-LIGHT/, Semiconductors, 28(10), 1994, pp. 1006-1008
INDUCED POLARIZATION PHOTOSENSITIVITY IN N-GAP P-SI HETEROJUNCTIONS/
Authors: BERKELIEV A ZHILYAEV YV NAZAROV N RUD VY RUD YV
Citation: A. Berkeliev et al., INDUCED POLARIZATION PHOTOSENSITIVITY IN N-GAP P-SI HETEROJUNCTIONS/, Semiconductors, 28(1), 1994, pp. 8-11
ELECTRICAL-PROPERTIES OF EPITAXIAL P-N GAP STRUCTURES DEPOSITED ON SI-SUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SERGEEV DV FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., ELECTRICAL-PROPERTIES OF EPITAXIAL P-N GAP STRUCTURES DEPOSITED ON SI-SUBSTRATES, Semiconductors, 27(8), 1993, pp. 729-732
ELECTROLUMINESCENCE OF EPITAXIAL GAP P-N STRUCTURES GROWN ON SI SUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SERGEEV DV FEDOROV LM
Citation: Vv. Evstropov et al., ELECTROLUMINESCENCE OF EPITAXIAL GAP P-N STRUCTURES GROWN ON SI SUBSTRATES, Semiconductors, 27(4), 1993, pp. 369-371
POLARIZATION PHOTOSENSITIVITY OF EPITAXIAL GAP STRUCTURES ON SI SUBSTRATES
Authors: ZHILYAEV YV NAZAROV N RUD VY RUD YV FEDOROV LM
Citation: Yv. Zhilyaev et al., POLARIZATION PHOTOSENSITIVITY OF EPITAXIAL GAP STRUCTURES ON SI SUBSTRATES, Semiconductors, 27(10), 1993, pp. 890-893
ENHANCEMENT OF THE INDUCED PHOTOPLEOCHROISM IN P-N-GAP P-SI STRUCTURES/
Authors: BERKELIEV A ZHILYAEV YV NAZAROV N RUD VY RUD YV FEDOROV LM
Citation: A. Berkeliev et al., ENHANCEMENT OF THE INDUCED PHOTOPLEOCHROISM IN P-N-GAP P-SI STRUCTURES/, Semiconductors, 27(10), 1993, pp. 897-900
HETEROEPITAXIAL GAAS P-N-STRUCTURES ON SI SUBSTRATES PREPARED BY GAS-PHASE EPITAXY IN THE OPEN CHLORIDE SYSTEM
Authors: ZHILYAEV YV LIPKO AL MYNBAEVA MG NAZAROV N FEDOROV LM
Citation: Yv. Zhilyaev et al., HETEROEPITAXIAL GAAS P-N-STRUCTURES ON SI SUBSTRATES PREPARED BY GAS-PHASE EPITAXY IN THE OPEN CHLORIDE SYSTEM, Pis'ma v Zurnal tehniceskoj fiziki, 19(7), 1993, pp. 30-33
MICROPLASMAS IN EPITAXIAL GAP P-N-STRUCTU RES GROWN ON SI SUBSTRATES
Authors: ZHILYAEV YV KONDRATEV BS NAZAROV N TUTYGIN VS FEDOROV LM
Citation: Yv. Zhilyaev et al., MICROPLASMAS IN EPITAXIAL GAP P-N-STRUCTU RES GROWN ON SI SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 19(6), 1993, pp. 14-19
PHOTOSENSITIVITY OF GAP SI HETEROSTRUCTUR ES IN LINEAR-POLARIZED EMISSION/
Authors: ZHILYAEV YV NAZAROV N RUD YV
Citation: Yv. Zhilyaev et al., PHOTOSENSITIVITY OF GAP SI HETEROSTRUCTUR ES IN LINEAR-POLARIZED EMISSION/, Pis'ma v Zurnal tehniceskoj fiziki, 19(15), 1993, pp. 44-52
PHOTOPLEOCHROISM OF N-GAASXPI-X P-SI HETE ROSTRUCTURES/
Authors: ZHILYAEV YV BERKELIEV A NAZAROV N RUD VY RUD YV FEDOROV LM
Citation: Yv. Zhilyaev et al., PHOTOPLEOCHROISM OF N-GAASXPI-X P-SI HETE ROSTRUCTURES/, Pis'ma v Zurnal tehniceskoj fiziki, 19(15), 1993, pp. 53-60
INJECTION ELECTROLUMINESCENCE OF EPITAXIA L GAP OF P-N-STRUCTURES ON SI SUBSTRATES
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N ROSSIN VV FEDOROV LM SHERNYAKOV YM
Citation: Vv. Evstropov et al., INJECTION ELECTROLUMINESCENCE OF EPITAXIA L GAP OF P-N-STRUCTURES ON SI SUBSTRATES, Pis'ma v Zurnal tehniceskoj fiziki, 19(15), 1993, pp. 61-64
SURFACE-BARRIER AU-N-GAP STRUCTURES ON SI SUBSTRATES - PREPARATION AND ELECTRICAL-PROPERTIES
Authors: BOBROV AV EVSTROPOV VV ZHILYAEV YV MYNBAEVA MG NAZAROV N
Citation: Av. Bobrov et al., SURFACE-BARRIER AU-N-GAP STRUCTURES ON SI SUBSTRATES - PREPARATION AND ELECTRICAL-PROPERTIES, Pis'ma v Zurnal tehniceskoj fiziki, 19(12), 1993, pp. 56-61
ELECTRIC AND PHOTOELECTRIC PROPERTIES OF ANISOTYPE GAP-SI HETEROSTRUCTURES PREPARED BY THE GAS-PHASE EPITAXY TECHNIQUE OF GALLIUM-PHOSPHIDE
Authors: EVSTROPOV VV ZHILYAEV YV NAZAROV N SERGEEV DV FEDOROV LM
Citation: Vv. Evstropov et al., ELECTRIC AND PHOTOELECTRIC PROPERTIES OF ANISOTYPE GAP-SI HETEROSTRUCTURES PREPARED BY THE GAS-PHASE EPITAXY TECHNIQUE OF GALLIUM-PHOSPHIDE, Zurnal tehniceskoj fiziki, 63(12), 1993, pp. 41-49
Risultati: 1-19 |