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Results: 1-25/35
Authors:
STACH EA
HULL R
BEAN JC
JONES KS
NEJIM A
Citation: Ea. Stach et al., ZIN-SITU STUDIES OF THE INTERACTION OF DISLOCATIONS WITH POINT-DEFECTS DURING ANNEALING OF ION-IMPLANTED SI SIGE/SI(001) HETEROSTRUCTURES/, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 294-307
Authors:
KUNA SAE
COLEMAN PG
NEJIM A
CRISTIANO F
HEMMENT PLF
Citation: Sae. Kuna et al., DEFECTS IN GE-IMPLANTED SI STUDIED BY SLOW POSITRON IMPLANTATION SPECTROSCOPY(), Semiconductor science and technology, 13(4), 1998, pp. 394-398
Authors:
SUPRUNBELEVICH Y
CRISTIANO F
NEJIM A
HEMMENT PLF
SEALY BJ
Citation: Y. Suprunbelevich et al., MECHANICAL STRAIN AND DEFECTS IN THE END-OF-RANGE REGION IN SILICON IMPLANTED WITH GE-IMPLANTED WITH C+ IONS( AND CO), Semiconductor science and technology, 13(2), 1998, pp. 220-225
Authors:
SUPRUNBELEVICH Y
CRISTIANO F
NEJIM A
HEMMENT PLF
SEALY BJ
Citation: Y. Suprunbelevich et al., EVOLUTION OF MECHANICAL STRAIN AND EXTENDED DEFECTS IN ANNEALED (100)SILICON SAMPLES IMPLANTED WITH GE+ IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 140(1-2), 1998, pp. 91-98
Authors:
NEJIM A
BARRADAS NP
JEYNES C
CRISTIANO F
WENDLER E
GARTNER K
SEALY BJ
Citation: A. Nejim et al., RESIDUAL POST ANNEAL DAMAGE OF GE-COIMPLANTATION AND C-COIMPLANTATIONOF SI DETERMINED BY QUANTITATIVE RBS-CHANNELING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 139(1-4), 1998, pp. 244-248
Authors:
KOZANECKI A
JEYNES C
SEALY BJ
NEJIM A
Citation: A. Kozanecki et al., ION-BEAM ANALYSIS OF 6H SIC IMPLANTED WITH ERBIUM AND YTTERBIUM IONS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 1272-1276
Authors:
NEJIM A
KNIGHTS AP
JEYNES C
COLEMAN PG
PATEL CJ
Citation: A. Nejim et al., PROFILE BROADENING OF HIGH-DOSE GERMANIUM IMPLANTS INTO (100)SILICON AT ELEVATED-TEMPERATURES DUE TO CHANNELING, Journal of applied physics, 83(7), 1998, pp. 3565-3573
Authors:
KNIGHTS AP
NEJIM A
COLEMAN PG
KHEYRANDISH H
ROMANI S
Citation: Ap. Knights et al., OPEN-VOLUME DEFECT TAILS IN GE-IMPLANTED SI PROBED BY SLOW POSITRONS, Applied physics letters, 73(10), 1998, pp. 1373-1375
Authors:
CRISTIANO F
BONAFOS C
NEJIM A
LOMBARDO S
OMRI M
ALQUIER D
MARTINEZ A
CAMPISANO SU
HEMMENT PLF
CLAVERIE A
Citation: F. Cristiano et al., INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON ), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 22-26
Authors:
FRANGIS N
STOEMENOS J
VANLANDUYT J
NEJIM A
HEMMENT PLF
Citation: N. Frangis et al., THE FORMATION OF 3C-SIC IN CRYSTALLINE SI BY CARBON IMPLANTATION AT 950-DEGREES-C AND ANNEALING - A STRUCTURAL STUDY, Journal of crystal growth, 181(3), 1997, pp. 218-228
Authors:
FREY L
STOEMENOS J
SCHORK R
NEJIM A
HEMMENT PLF
Citation: L. Frey et al., SYNTHESIS OF SIC BY HIGH-TEMPERATURE C- THE ROLE OF SI( IMPLANTATION INTO SIO2 )SIO2 INTERFACE/, Journal of the Electrochemical Society, 144(12), 1997, pp. 4314-4320
Authors:
GUILLOU PJ
WINDSOR AJ
NEJIM A
Citation: Pj. Guillou et al., CLINICAL ECONOMICS REVIEW - THE HEALTH-CARE ECONOMIC-IMPLICATIONS OF MINIMAL ACCESS GASTROINTESTINAL SURGERY, Alimentary pharmacology & therapeutics, 10(5), 1996, pp. 707-713
Authors:
QIAN YH
EVANS JH
GILES LF
NEJIM A
HEMMENT PLF
Citation: Yh. Qian et al., ELECTRICAL AND OPTICAL CHARACTERIZATION OF EXTENDED DEFECTS IN SIMOX STRUCTURES, Semiconductor science and technology, 11(1), 1996, pp. 27-33
Authors:
OMRI M
BONAFOS C
CLAVERIE A
NEJIM A
CRISTIANO F
ALQUIER D
MARTINEZ A
COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8
Authors:
NEJIM A
HEMMENT PL
STOEMENOS J
Citation: A. Nejim et al., HIGH-TEMPERATURE CARBON IMPLANTATION IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 129-132
Authors:
CRISTIANO F
NEJIM A
DEMAUDUIT B
CLAVERIE A
HEMMENT PLF
Citation: F. Cristiano et al., CHARACTERIZATION OF EXTENDED DEFECTS IN SIGE ALLOYS FORMED BY HIGH-DOSE GE+ IMPLANTATION INTO SI, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 156-160
Authors:
NEJIM A
CRISTIANO F
HEMMENT PLF
HOPE DAO
GLASPER JL
PICKERING C
LEONG WY
ROBBINS DJ
Citation: A. Nejim et al., A STUDY OF BASE CONTACT FORMATION IN EPITAXIAL SI SI0.88GE0.12 HBT STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 305-310
Authors:
CRISTIANO F
NEJIM A
HOPE DAO
HOULTON MR
HEMMENT PLF
Citation: F. Cristiano et al., STRUCTURAL STUDIES OF ION-BEAM SYNTHESIZED SIGE SI HETEROSTRUCTURES FOR HBT APPLICATIONS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 311-315
Authors:
FRANGIS N
NEJIM A
HEMMENT PLF
STOEMENOS J
VANLANDUYT J
Citation: N. Frangis et al., ION-BEAM SYNTHESIS OF BETA-SIC AT 950-DEGREES-C AND STRUCTURAL CHARACTERIZATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 325-329
Authors:
LI YP
MARSH CD
NEJIM A
CHATER RJ
KILNER JA
HEMMENT PLF
Citation: Yp. Li et al., SIMOX - PROCESSING, LAYER PARAMETERS DESIGN, AND DEFECTS CONTROL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 99(1-4), 1995, pp. 479-483
Authors:
KOMODA T
KELLY J
CRISTIANO F
NEJIM A
HEMMENT PLF
HOMEWOOD KP
GWILLIAM R
MYNARD JE
SEALY BJ
Citation: T. Komoda et al., VISIBLE PHOTOLUMINESCENCE AT ROOM-TEMPERATURE FROM MICROCRYSTALLINE SILICON PRECIPITATES IN SIO2 FORMED BY ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 96(1-2), 1995, pp. 387-391
Authors:
HEMMENT PLF
CRISTIANO F
NEJIM A
LOMBARDO S
LARSSEN KK
PRIOLO F
BARKLIE RC
Citation: Plf. Hemment et al., GE+ ION-IMPLANTATION - A COMPETING TECHNOLOGY, Journal of crystal growth, 157(1-4), 1995, pp. 147-160
Authors:
FAN TW
NEJIM A
ZHANG JP
WANG ZG
HEMMENT PLF
CHESCOE D
Citation: Tw. Fan et al., PRECIPITATION IN HEAVILY ARSENIC-IMPLANTED GEXSI1-X ALLOYS, Applied physics letters, 66(9), 1995, pp. 1117-1119
Authors:
NEJIM A
HEMMENT PLF
STOEMENOS J
Citation: A. Nejim et al., SIC BURIED LAYER FORMATION BY ION-BEAM SYNTHESIS AT 950-DEGREES-C, Applied physics letters, 66(20), 1995, pp. 2646-2648
Authors:
LI YP
KILNER JA
CHATER RJ
NEJIM A
HEMMENT PLF
MARSH CD
BOOKER GR
Citation: Yp. Li et al., OXYGEN ISOTOPIC EXCHANGE DURING THE ANNEALING OF LOW-ENERGY SIMOX LAYERS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 236-242