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Results: 1-25 | 26-50 | 51-51
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ON THE IMPROVEMENT IN THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: CHEN WM BUYANOVA IA POZINA G MONEMAR B NI WX HANSSON GV
Citation: Wm. Chen et al., ON THE IMPROVEMENT IN THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1928-1932
CHARACTERIZATION OF STRAINED SI SI1-YCY STRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY/
Authors: JOELSSON KB NI WX POZINA G PETTERSSON LAA HALLBERG T MONEMAR B HANSSON GV
Citation: Kb. Joelsson et al., CHARACTERIZATION OF STRAINED SI SI1-YCY STRUCTURES PREPARED BY MOLECULAR-BEAM EPITAXY/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1621-1626
PROPERTIES OF ER-RELATED EMISSION IN IN-SITU DOPED SI EPILAYERS GROWNBY MOLECULAR-BEAM EPITAXY
Authors: BUYANOVA IA CHEN WM POZINA G NI WX HANSSON GV MONEMAR B
Citation: Ia. Buyanova et al., PROPERTIES OF ER-RELATED EMISSION IN IN-SITU DOPED SI EPILAYERS GROWNBY MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1732-1736
GROWTH OF STRAINED SI SI1-YCY/SI1-XGEX STRUCTURES BY MBE/
Authors: JOELSSON KB NI WX POZINA G HULTMAN L HANSSON GV
Citation: Kb. Joelsson et al., GROWTH OF STRAINED SI SI1-YCY/SI1-XGEX STRUCTURES BY MBE/, Vacuum, 49(3), 1998, pp. 185-188
OPTIMIZATION OF GROWTH-CONDITIONS FOR STRAINED SI SI1-YCY STRUCTURES/
Authors: JOELSSON KB NI WX POZINA G HULTMAN L HANSSON GV
Citation: Kb. Joelsson et al., OPTIMIZATION OF GROWTH-CONDITIONS FOR STRAINED SI SI1-YCY STRUCTURES/, Thin solid films, 321, 1998, pp. 15-20
ROLE OF STRAIN IN DOPANT SURFACE SEGREGATION DURING SI AND SIGE GROWTH BY MOLECULAR-BEAM EPITAXY
Authors: NI WX HANSSON GV CARDENAS J SVENSSON BG
Citation: Wx. Ni et al., ROLE OF STRAIN IN DOPANT SURFACE SEGREGATION DURING SI AND SIGE GROWTH BY MOLECULAR-BEAM EPITAXY, Thin solid films, 321, 1998, pp. 131-135
INCORPORATION AND LUMINESCENCE PROPERTIES OF ER2O3 AND ERF3 DOPED SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: NI WX JOELSSON KB DU CX POZINA G BUYANOVA IA CHENA WM HANSSON GV MONEMAR B
Citation: Wx. Ni et al., INCORPORATION AND LUMINESCENCE PROPERTIES OF ER2O3 AND ERF3 DOPED SI LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Thin solid films, 321, 1998, pp. 223-227
INJECTION OF SELF-INTERSTITIALS DURING SPUTTER DEPTH PROFILING OF SI AT ROOM-TEMPERATURE
Authors: CARDENAS J SVENSSON BG NI WX JOELSSON KB HANSSON GV
Citation: J. Cardenas et al., INJECTION OF SELF-INTERSTITIALS DURING SPUTTER DEPTH PROFILING OF SI AT ROOM-TEMPERATURE, Applied physics letters, 73(21), 1998, pp. 3088-3089
SILICON-BASED STRUCTURES FOR IR LIGHT-EMISSION
Authors: HANSSON GV NI WX JOELSSON KB BUYANOVA IA
Citation: Gv. Hansson et al., SILICON-BASED STRUCTURES FOR IR LIGHT-EMISSION, Physica scripta. T, T69, 1997, pp. 60-64
LATTICE DISTORTION IN DRY-ETCHED SI SIGE QUANTUM-DOT ARRAY STUDIED BY2D RECIPROCAL SPACE MAPPING USING SYNCHROTRON X-RAY-DIFFRACTION/
Authors: NI WX BIRCH J TANG YS JOELSSON KB SOTOMAYORTORRES C KVICK A HANSSON GV
Citation: Wx. Ni et al., LATTICE DISTORTION IN DRY-ETCHED SI SIGE QUANTUM-DOT ARRAY STUDIED BY2D RECIPROCAL SPACE MAPPING USING SYNCHROTRON X-RAY-DIFFRACTION/, Thin solid films, 294(1-2), 1997, pp. 300-303
CONTROLLING THE STRAIN AND LIGHT-EMISSION FROM SI-SI1-XGEX QUANTUM DOTS
Authors: TANG YS HICKS SE NI WX TORRES CMS HANSSON GV WILKINSON CDW
Citation: Ys. Tang et al., CONTROLLING THE STRAIN AND LIGHT-EMISSION FROM SI-SI1-XGEX QUANTUM DOTS, Thin solid films, 294(1-2), 1997, pp. 304-307
HIGH-RESOLUTION X-RAY-DIFFRACTION MAPPING STUDIES ON THE DOMAIN-STRUCTURE OF LAALO3 SINGLE-CRYSTAL SUBSTRATES AND ITS INFLUENCE ON SRTIO3 FILM GROWTH
Authors: WANG X HELMERSSON U BIRCH J NI WX
Citation: X. Wang et al., HIGH-RESOLUTION X-RAY-DIFFRACTION MAPPING STUDIES ON THE DOMAIN-STRUCTURE OF LAALO3 SINGLE-CRYSTAL SUBSTRATES AND ITS INFLUENCE ON SRTIO3 FILM GROWTH, Journal of crystal growth, 171(3-4), 1997, pp. 401-408
HALL FACTOR AND DRIFT MOBILITY FOR HOLE TRANSPORT IN STRAINED SI1-XGEX ALLOYS
Authors: JOELSSON KB FU Y NI WX HANSSON GV
Citation: Kb. Joelsson et al., HALL FACTOR AND DRIFT MOBILITY FOR HOLE TRANSPORT IN STRAINED SI1-XGEX ALLOYS, Journal of applied physics, 81(3), 1997, pp. 1264-1269
ROOM-TEMPERATURE 1.54 MU-M LIGHT-EMISSION OF ERBIUM-DOPED SI SCHOTTKYDIODES PREPARED BY MOLECULAR-BEAM EPITAXY
Authors: DU CX NI WX JOELSSON KB HANSSON GV
Citation: Cx. Du et al., ROOM-TEMPERATURE 1.54 MU-M LIGHT-EMISSION OF ERBIUM-DOPED SI SCHOTTKYDIODES PREPARED BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 71(8), 1997, pp. 1023-1025
SI1-YCY SI(001) HETEROSTRUCTURES MADE BY SUBLIMATION OF SIC DURING SILICON MOLECULAR-BEAM EPITAXY/
Authors: JOELSSON KB NI WX POZINA G RADAMSON HH HANSSON GV
Citation: Kb. Joelsson et al., SI1-YCY SI(001) HETEROSTRUCTURES MADE BY SUBLIMATION OF SIC DURING SILICON MOLECULAR-BEAM EPITAXY/, Applied physics letters, 71(5), 1997, pp. 653-655
MECHANISM FOR THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURESGROWN BY MOLECULAR-BEAM EPITAXY - ROLE OF NONRADIATIVE DEFECTS/
Authors: BUYANOVA IA CHEN WM POZINA G MONEMAR B NI WX
Citation: Ia. Buyanova et al., MECHANISM FOR THERMAL QUENCHING OF LUMINESCENCE IN SIGE SI STRUCTURESGROWN BY MOLECULAR-BEAM EPITAXY - ROLE OF NONRADIATIVE DEFECTS/, Applied physics letters, 71(25), 1997, pp. 3676-3678
POSTGROWTH HYDROGEN TREATMENTS OF NONRADIATIVE DEFECTS IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI
Authors: CHEN WM BUYANOVA IA NI WX HANSSON GV MONEMAR B
Citation: Wm. Chen et al., POSTGROWTH HYDROGEN TREATMENTS OF NONRADIATIVE DEFECTS IN LOW-TEMPERATURE MOLECULAR-BEAM EPITAXIAL SI, Applied physics letters, 70(3), 1997, pp. 369-371
ER O AND ER/F DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI LAYERS FOR EFFICIENT 1.54 MU-M LIGHT-EMISSION/
Authors: NI WX JOELSSON KB DU CX BUYANOVA IA POZINA G CHEN WM HANSSON GV MONEMAR B CARDENAS J SVENSSON BG
Citation: Wx. Ni et al., ER O AND ER/F DOPING DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI LAYERS FOR EFFICIENT 1.54 MU-M LIGHT-EMISSION/, Applied physics letters, 70(25), 1997, pp. 3383-3385
HIGH-RESOLUTION X-RAY-ANALYSIS OF INGAN GAN SUPERLATTICES GROWN ON SAPPHIRE SUBSTRATES WITH GAN LAYERS (VOL 69, PG 3390, 1996)/
Authors: LI W BERGMAN P IVANOV I NI WX
Citation: W. Li et al., HIGH-RESOLUTION X-RAY-ANALYSIS OF INGAN GAN SUPERLATTICES GROWN ON SAPPHIRE SUBSTRATES WITH GAN LAYERS (VOL 69, PG 3390, 1996)/, Applied physics letters, 70(15), 1997, pp. 2056-2056
ROOM-TEMPERATURE ELECTROLUMINESCENCE OF NANOFABRICATED SI-SI1-XGEX QUANTUM-DOT DIODES
Authors: TANG YS TORRES CMS NI WX HANSSON GV
Citation: Ys. Tang et al., ROOM-TEMPERATURE ELECTROLUMINESCENCE OF NANOFABRICATED SI-SI1-XGEX QUANTUM-DOT DIODES, Superlattices and microstructures, 20(4), 1996, pp. 505-511
ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/
Authors: TANG YS TORRES CMS NILSSON S DIETRICH B KISSINGER W WHALL TE PARKER EHC NI WX HANSSON GV PRESTING H KIBBEL H
Citation: Ys. Tang et al., ELASTIC STRAIN AND ENHANCED LIGHT-EMISSION IN DRY-ETCHED SI SI1-XGEX QUANTUM DOTS/, Journal of electronic materials, 25(2), 1996, pp. 287-291
ELECTRICAL CHARACTERIZATION AND THE STRAIN COMPENSATION EFFECT AND THERMAL-STABILITY OF B-DOPED SI1-XGEX SI HETEROSTRUCTURES/
Authors: RADAMSON HH NUR O NI WX JOELSSON KB WILLANDER M HULTMAN L HANSSON GV
Citation: Hh. Radamson et al., ELECTRICAL CHARACTERIZATION AND THE STRAIN COMPENSATION EFFECT AND THERMAL-STABILITY OF B-DOPED SI1-XGEX SI HETEROSTRUCTURES/, Semiconductor science and technology, 11(10), 1996, pp. 1396-1401
THE ROLE OF LOW-TEMPERATURE GROWTH DEFECTS FOR THE STABILITY OF STRAINED SI SI1-XGEX HETEROSTRUCTURES/
Authors: RADAMSON HH NI WX HANSSON GV
Citation: Hh. Radamson et al., THE ROLE OF LOW-TEMPERATURE GROWTH DEFECTS FOR THE STABILITY OF STRAINED SI SI1-XGEX HETEROSTRUCTURES/, Applied surface science, 102, 1996, pp. 82-85
IMPORTANT DEFECT ASPECTS IN OPTOELECTRONIC APPLICATIONS OF SI- AND SIGE SI-HETEROSTRUCTURES/
Authors: CHEN WM BUYANOVA IA HENRY A NI WX HANSSON GV MONEMAR B
Citation: Wm. Chen et al., IMPORTANT DEFECT ASPECTS IN OPTOELECTRONIC APPLICATIONS OF SI- AND SIGE SI-HETEROSTRUCTURES/, Applied surface science, 102, 1996, pp. 279-282
INFLUENCE OF GROWTH-CONDITIONS ON THE FORMATION OF DEEP PHOTOLUMINESCENCE BANDS IN MBE-GROWN SI LAYERS AND SIGE SI QUANTUM STRUCTURES/
Authors: BUYANOVA IA CHEN WM HENRY A NI WX HANSSON GV MONEMAR B
Citation: Ia. Buyanova et al., INFLUENCE OF GROWTH-CONDITIONS ON THE FORMATION OF DEEP PHOTOLUMINESCENCE BANDS IN MBE-GROWN SI LAYERS AND SIGE SI QUANTUM STRUCTURES/, Applied surface science, 102, 1996, pp. 293-297
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