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Results: 1-11 |
Results: 11
PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON
Authors: SCHMIDT DC SVENSSON BG KESKITALO N GODEY S NTSOENZOK E BARBOT JF BLANCHARD C
Citation: Dc. Schmidt et al., PROXIMITY GETTERING OF PLATINUM IN PROTON-IRRADIATED SILICON, Journal of applied physics, 84(8), 1998, pp. 4214-4218
STUDIES OF DEEP LEVELS IN HE-IRRADIATED SILICON()
Authors: SCHMIDT DC BARBOT JF BLANCHARD C DESGARDIN P NTSOENZOK E BLONDIAUX G
Citation: Dc. Schmidt et al., STUDIES OF DEEP LEVELS IN HE-IRRADIATED SILICON(), Applied physics A: Materials science & processing, 65(4-5), 1997, pp. 403-406
DEFECT LEVELS OF PROTON-IRRADIATED SILICON WITH A DOSE OF 3.6 X 10(13) CM(-2)
Authors: SCHMIDT DC BARBOT JF BLANCHARD C NTSOENZOK E
Citation: Dc. Schmidt et al., DEFECT LEVELS OF PROTON-IRRADIATED SILICON WITH A DOSE OF 3.6 X 10(13) CM(-2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 132(3), 1997, pp. 439-446
THE EFFECT OF PARTICLE-FLUENCE AND FLUX IN ALPHA-IRRADIATED SILICON
Authors: DESGARDIN P HENRY L NTSOENZOK E BLONDIAUX G BARBOT JF BLANCHARD C
Citation: P. Desgardin et al., THE EFFECT OF PARTICLE-FLUENCE AND FLUX IN ALPHA-IRRADIATED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 59-62
DIVACANCY AND RESISTIVITY PROFILES IN N-TYPE SI IMPLANTED WITH 1.15-MEV PROTONS
Authors: KAUPPINEN H CORBEL C SKOG K SAARINEN K LAINE T HAUTOJARVI P DESGARDIN P NTSOENZOK E
Citation: H. Kauppinen et al., DIVACANCY AND RESISTIVITY PROFILES IN N-TYPE SI IMPLANTED WITH 1.15-MEV PROTONS, Physical review. B, Condensed matter, 55(15), 1997, pp. 9598-9608
DEFECT LEVELS IN N-SILICON AFTER HIGH-ENERGY AND HIGH-DOSE IMPLANTATION OF PROTON
Authors: BARBOT JF BLANCHARD C NTSOENZOK E VERNOIS J
Citation: Jf. Barbot et al., DEFECT LEVELS IN N-SILICON AFTER HIGH-ENERGY AND HIGH-DOSE IMPLANTATION OF PROTON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 81-84
COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES
Authors: NTSOENZOK E DESGARDIN P BARBOT JF VERNOIS J ISABELLE DB
Citation: E. Ntsoenzok et al., COMPARISON OF N-TYPE AND P-TYPE SILICON IRRADIATED BY MEV PROTONS ANDPOSTANNEALED AT DIFFERENT TEMPERATURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 154-157
BEAM SCANNING SYSTEM FOR THE UNIFORMITY OF IMPLANTED DOSES IN A LARGE-AREA
Authors: DESGARDIN P NTSOENZOK E BARBOT JF BRIAUD J VERNOIS J ISABELLE DB
Citation: P. Desgardin et al., BEAM SCANNING SYSTEM FOR THE UNIFORMITY OF IMPLANTED DOSES IN A LARGE-AREA, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 267-269
EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON
Authors: NTSOENZOK E DESGARDIN P SAILLARD M VERNOIS J BARBOT JF
Citation: E. Ntsoenzok et al., EVOLUTION OF SHALLOW DONORS WITH PROTON FLUENCE IN N-TYPE SILICON, Journal of applied physics, 79(11), 1996, pp. 8274-8277
DEFECT LEVEL OF PROTON-IRRADIATED SILICON WITH DOSES RANGING FROM 1X10(12) CM(-2) TO 1X10(13) CM(-2)
Authors: BARBOT JF NTSOENZOK E BLANCHARD C VERNOIS J ISABELLE DB
Citation: Jf. Barbot et al., DEFECT LEVEL OF PROTON-IRRADIATED SILICON WITH DOSES RANGING FROM 1X10(12) CM(-2) TO 1X10(13) CM(-2), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 95(2), 1995, pp. 213-218
STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS
Authors: NTSOENZOK E BARBOT JF DESGARDIN P VERNOIS J BLANCHARD C ISABELLE DB
Citation: E. Ntsoenzok et al., STUDY OF THE DEFECTS INDUCED IN N-TYPE SILICON IRRADIATED BY 1-3-MEV PROTONS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1932-1936
Risultati: 1-11 |