AAAAAA

   
Results: 1-15 |
Results: 15
STABILITY OF DENSELY CONTACT-ELECTRIFIED CHARGES ON THIN SILICON-OXIDE IN AIR
Authors: MORITA S UCHIHASHI T OKUSAKO T YAMANISHI Y OASA T SUGAWARA Y
Citation: S. Morita et al., STABILITY OF DENSELY CONTACT-ELECTRIFIED CHARGES ON THIN SILICON-OXIDE IN AIR, JPN J A P 1, 35(11), 1996, pp. 5811-5814
DENSITY SATURATION OF DENSELY CONTACT-ELECTRIFIED NEGATIVE CHARGES ONA THIN SILICON-OXIDE SAMPLE DUE TO THE COULOMB REPULSIVE FORCE
Authors: SUGAWARA Y TSUYUGUCHI T UCHIHASHI T OKUSAKO T FUKANO Y YAMANISHI Y OASA T MORITA S
Citation: Y. Sugawara et al., DENSITY SATURATION OF DENSELY CONTACT-ELECTRIFIED NEGATIVE CHARGES ONA THIN SILICON-OXIDE SAMPLE DUE TO THE COULOMB REPULSIVE FORCE, Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties, 74(5), 1996, pp. 1339-1346
CORRELATION BETWEEN CONTACT-ELECTRIFIED CHARGE GROUPS ON A THIN SILICON-OXIDE
Authors: UCHIHASHI T OKUSAKO T SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: T. Uchihashi et al., CORRELATION BETWEEN CONTACT-ELECTRIFIED CHARGE GROUPS ON A THIN SILICON-OXIDE, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 1055-1059
PROXIMITY EFFECTS OF NEGATIVE CHARGE GROUPS CONTACT-ELECTRIFIED ON THIN SILICON-OXIDE IN AIR
Authors: UCHIHASHI T OKUSAKO T SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: T. Uchihashi et al., PROXIMITY EFFECTS OF NEGATIVE CHARGE GROUPS CONTACT-ELECTRIFIED ON THIN SILICON-OXIDE IN AIR, Journal of applied physics, 79(8), 1996, pp. 4174-4177
TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SILICON-OXIDE USING DENSECONTACT ELECTRIFICATION
Authors: FUKANO Y HONTANI KJ UCHIHASHI T OKUSAKO T CHAYAHARA A SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: Y. Fukano et al., TIME-DEPENDENT DIELECTRIC-BREAKDOWN OF THIN SILICON-OXIDE USING DENSECONTACT ELECTRIFICATION, JPN J A P 1, 33(6B), 1994, pp. 3756-3760
TIME EVOLUTION OF CONTACT-ELECTRIFIED ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE INVESTIGATED USING NONCONTACT ATOMIC-FORCE MICROSCOPE
Authors: FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: Y. Fukano et al., TIME EVOLUTION OF CONTACT-ELECTRIFIED ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE INVESTIGATED USING NONCONTACT ATOMIC-FORCE MICROSCOPE, JPN J A P 1, 33(1B), 1994, pp. 379-382
PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE
Authors: FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: Y. Fukano et al., PARAMETER DEPENDENCE OF STABLE STATE OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE, JPN J A P 1, 33(12A), 1994, pp. 6739-6745
HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE
Authors: UCHIHASHI T OKUSAKO T SUGAWARA Y YAMANISHI Y OASA T MORITA S
Citation: T. Uchihashi et al., HEAT-TREATMENT AND STEAMING EFFECTS OF SILICON-OXIDE UPON ELECTRON DISSIPATION ON SILICON-OXIDE SURFACE, JPN J A P 2, 33(8A), 1994, pp. 120001128-120001130
CONTACT ELECTRIFICATION ON THIN SILICON-OXIDE IN VACUUM
Authors: TSUYUGUCHI T UCHIHASHI T OKUSAKO T SUGAWARA Y MORITA S YAMANISHI Y OASA T
Citation: T. Tsuyuguchi et al., CONTACT ELECTRIFICATION ON THIN SILICON-OXIDE IN VACUUM, JPN J A P 2, 33(7B), 1994, pp. 120001046-120001048
SPATIAL-DISTRIBUTION AND ITS PHASE-TRANSITION OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON A THIN SILICON-OXIDE
Authors: SUGAWARA Y MORITA S FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A YAMANISHI Y OASA T
Citation: Y. Sugawara et al., SPATIAL-DISTRIBUTION AND ITS PHASE-TRANSITION OF DENSELY CONTACT-ELECTRIFIED ELECTRONS ON A THIN SILICON-OXIDE, JPN J A P 2, 33(1A), 1994, pp. 120000070-120000073
SPATIAL DISTRIBUTIONS OF DENSELY CONTACT-ELECTRIFIED CHARGES ON A THIN SILICON-OXIDE
Authors: SUGAWARA Y MORITA S FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A YAMANISHI Y OASA T
Citation: Y. Sugawara et al., SPATIAL DISTRIBUTIONS OF DENSELY CONTACT-ELECTRIFIED CHARGES ON A THIN SILICON-OXIDE, JPN J A P 2, 33(1A), 1994, pp. 120000074-120000077
ATOMIC-FORCE MICROSCOPY STUDIES OF CONTACT-ELECTRIFIED CHARGES ON SILICON-OXIDE FILM
Authors: SUGAWARA Y FUKANO Y UCHIHASHI T OKUSAKO T MORITA S YAMANISHI Y OASA T OKADA T
Citation: Y. Sugawara et al., ATOMIC-FORCE MICROSCOPY STUDIES OF CONTACT-ELECTRIFIED CHARGES ON SILICON-OXIDE FILM, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(3), 1994, pp. 1627-1630
DISSIPATION OF CONTACT-ELECTRIFIED CHARGE ON THIN SI-OXIDE STUDIED BYATOMIC-FORCE MICROSCOPY
Authors: MORITA S FUKANO Y UCHIHASHI T SUGAWARA Y YAMANISHI Y OASA T
Citation: S. Morita et al., DISSIPATION OF CONTACT-ELECTRIFIED CHARGE ON THIN SI-OXIDE STUDIED BYATOMIC-FORCE MICROSCOPY, Applied surface science, 75, 1994, pp. 151-156
STABLE-UNSTABLE PHASE-TRANSITION OF DENSELY CONTRACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE
Authors: MORITA S SUGAWARA Y FUKANO Y UCHIHASHI T OKUSAKO T CHAYAHARA A YAMANISHI Y OASA T
Citation: S. Morita et al., STABLE-UNSTABLE PHASE-TRANSITION OF DENSELY CONTRACT-ELECTRIFIED ELECTRONS ON THIN SILICON-OXIDE, JPN J A P 2, 32(12B), 1993, pp. 120001852-120001854
REPRODUCIBLE AND CONTROLLABLE CONTACT ELECTRIFICATION ON A THIN INSULATOR
Authors: MORITA S FUKANO Y UCHIHASHI T OKUSAKO T SUGAWARA Y YAMANISHI Y OASA T
Citation: S. Morita et al., REPRODUCIBLE AND CONTROLLABLE CONTACT ELECTRIFICATION ON A THIN INSULATOR, JPN J A P 2, 32(11B), 1993, pp. 120001701-120001703
Risultati: 1-15 |