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Results: 26-43/43
Authors:
MATSUKAWA T
MORI S
TANII T
ARIMURA T
KOH M
IGARASHI K
SUGIMOTO T
OHDOMARI I
Citation: T. Matsukawa et al., EVALUATION OF SOFT-ERROR HARDNESS OF DRAMS UNDER QUASI-HEAVY ION IRRADIATION USING HE SINGLE-ION MICROPROBE TECHNIQUE, IEEE transactions on nuclear science, 43(6), 1996, pp. 2849-2855
Authors:
KOH M
IGARASHI K
SUGIMOTO T
MATSUKAWA T
MORI S
ARIMURA T
OHDOMARI I
Citation: M. Koh et al., QUANTITATIVE ESTIMATION OF GENERATION RATES OF SI SIO2 INTERFACE DEFECTS BY MEV HE SINGLE-ION IRRADIATION/, IEEE transactions on nuclear science, 43(6), 1996, pp. 2952-2959
Authors:
KOH M
SHIGETA B
IGARASHI K
MATSUKAWA T
TANII T
MORI S
OHDOMARI I
Citation: M. Koh et al., QUANTITATIVE-ANALYSIS OF RADIATION-INDUCED SI SIO2 INTERFACE DEFECTS BY MEANS OF MEV HE SINGLE-ION IRRADIATION/, Applied physics letters, 68(11), 1996, pp. 1552-1554
Authors:
HOSHINO T
KOKUBUN K
KUMAMOTO K
ISHIMARU T
OHDOMARI I
Citation: T. Hoshino et al., HIGH-TEMPERATURE SCANNING-TUNNELING-MICROSCOPY (STM) OBSERVATION OF METASTABLE STRUCTURES ON QUENCHED SI(111) SURFACES, JPN J A P 1, 34(6B), 1995, pp. 3346-3350
Authors:
KUMAMOTO K
HOSHINO T
KOKUBUN K
ISHIMARU T
OHDOMARI I
Citation: K. Kumamoto et al., EFFECT OF THE ADATOM PRESENCE ON STABILIZING SI(111)-NXN DIMER-ADATOM-STACKING-FAULT STRUCTURES, Physical review. B, Condensed matter, 52(15), 1995, pp. 10784-10787
Authors:
HOSHINO T
KUMAMOTO K
KOKUBUN K
ISHIMARU T
OHDOMARI I
Citation: T. Hoshino et al., EVIDENCE FOR THE LEADING ROLE OF THE STACKING-FAULT TRIANGLE IN THE SI(111)1X-1-]7X7 PHASE-TRANSITION, Physical review. B, Condensed matter, 51(20), 1995, pp. 14594-14597
Authors:
TSUKUI K
ENDO K
HASUNUMA R
HIRABAYASHI O
YAGI N
AIHARA H
OSAKA T
OHDOMARI I
Citation: K. Tsukui et al., CHANGES IN TRANSITION-TEMPERATURE OF THE SI(111)1X1-7X7 PHASE-TRANSITION OBSERVED UNDER VARIOUS OXYGEN ENVIRONMENTS, Surface science, 328(3), 1995, pp. 553-560
Authors:
HOSHINO T
KOKUBUN K
FUJIWARA H
KUMAMOTO K
ISHIMARU T
OHDOMARI I
Citation: T. Hoshino et al., CRITICAL DOMAIN SIZE OF THE 7X7-STRUCTURE FOR NUCLEATION AND GROWTH ON SI(111) QUENCHED SURFACES, Physical review letters, 75(12), 1995, pp. 2372-2375
Authors:
KOH M
HARA K
HORITA K
SHIGETA B
MATSUKAWA T
KISHIDA A
TANII T
GOTO M
OHDOMARI I
Citation: M. Koh et al., REVERSE-MODE SINGLE-ION BEAM-INDUCED CHARGE (R-MODE SIBIC) IMAGING FOR THE TEST OF TOTAL-DOSE EFFECTS IN N-CH METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR (MOSFET), JPN J A P 2, 33(7A), 1994, pp. 120000962-120000965
Authors:
MATSUKAWA T
KISHIDA A
KOH M
HARA K
HORITA K
GOTO M
MATSUDA S
KUBOYAMA S
OHDOMARI I
Citation: T. Matsukawa et al., IDENTIFICATION OF SOFT-ERROR SENSITIVE JUNCTION IN SRAMS USING A SINGLE-ION MICROPROBE, IEEE electron device letters, 15(6), 1994, pp. 199-201
Authors:
KOH M
HARA K
HORITA K
SHIGETA B
MATSUKAWA T
KISHIDA A
TANII T
GOTO M
OHDOMARI I
Citation: M. Koh et al., DEVELOPMENT OF THE SINGLE-ION BEAM-INDUCED CHARGE (SIBIC) IMAGING TECHNIQUE USING THE SINGLE-ION MICROPROBE SYSTEM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 93(1), 1994, pp. 82-86
Authors:
HOSHINO T
TSUDA M
OIKAWA S
OHDOMARI I
Citation: T. Hoshino et al., MECHANISMS OF THE ADSORPTION OF OXYGEN MOLECULES AND THE SUBSEQUENT OXIDATION OF THE RECONSTRUCTED DIMERS ON SI(001) SURFACES, Physical review. B, Condensed matter, 50(20), 1994, pp. 14999-15008
Authors:
MATSUKAWA T
KISHIDA A
TANII T
KOH M
HORITA K
HARA K
SHIGETA B
GOTO M
MATSUDA S
KUBOYAMA S
OHDOMARI I
Citation: T. Matsukawa et al., TOTAL-DOSE DEPENDENCE OF SOFT-ERROR HARDNESS IN 64KBIT SRAMS EVALUATED BY SINGLE-ION MICROPROBE TECHNIQUE, IEEE transactions on nuclear science, 41(6), 1994, pp. 2071-2076
Authors:
FUKUDA H
UENO T
KAWARADA H
OHDOMARI I
Citation: H. Fukuda et al., EFFECT OF DEUTERIUM ANNEAL ON SIO2 SI(100) INTERFACE TRAPS AND ELECTRON-SPIN-RESONANCE SIGNALS OF ULTRATHIN SIO2-FILMS/, JPN J A P 2, 32(4B), 1993, pp. 569-571
Authors:
TSUKUI K
ENDO K
HASUNUMA R
OSAKA T
OHDOMARI I
YAGI N
AIHARA H
Citation: K. Tsukui et al., EXTREMELY HIGH-VACUUM SYSTEM FOR DYNAMICAL SURFACE-ANALYSIS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 11(5), 1993, pp. 2655-2658
EVALUATION OF SINGLE-EVENT IMMUNITY IN MICRON-SIZE DEVICE AREA USING SINGLE-ION MICROPROBE TECHNIQUE
Authors:
MATSUKAWA T
NORITAKE K
KOH M
HARA K
GOTO M
OHDOMARI I
Citation: T. Matsukawa et al., EVALUATION OF SINGLE-EVENT IMMUNITY IN MICRON-SIZE DEVICE AREA USING SINGLE-ION MICROPROBE TECHNIQUE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 77(1-4), 1993, pp. 239-242
Authors:
YAGI N
AIHARA H
YAMAMOTO H
TSUKUI K
OHDOMARI I
Citation: N. Yagi et al., AN ALL METAL EXTREMELY HIGH-VACUUM CRYOPUMP, Vacuum, 44(5-7), 1993, pp. 705-708
Authors:
HOSHINO T
TSUDA M
OIKAWA S
OHDOMARI I
Citation: T. Hoshino et al., THEORETICAL CONSIDERATION ON DIMER VACANCY IMAGES IN THE STM OBSERVATIONS OF SI(001) SURFACES IN TERMS OF THE ADSORPTION OF O2 MOLECULES, Surface science, 291(3), 1993, pp. 120000763-120000767