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Results: 1-11 |
Results: 11
LOW-TEMPERATURE CONDUCTION AND GIANT NEGATIVE MAGNETORESISTANCE IN III-V-BASED DILUTED MAGNETIC SEMICONDUCTOR - (GA,MN)AS GAAS/
Authors: OIWA A KATSUMOTO S ENDO A HIRASAWA M IYE Y MATSUKURA F SHEN A SUGAWARA Y OHNO H
Citation: A. Oiwa et al., LOW-TEMPERATURE CONDUCTION AND GIANT NEGATIVE MAGNETORESISTANCE IN III-V-BASED DILUTED MAGNETIC SEMICONDUCTOR - (GA,MN)AS GAAS/, Physica. B, Condensed matter, 251, 1998, pp. 775-779
STRONGLY ANISOTROPIC HOPPING CONDUCTION IN (GA, MN)AS GAAS/
Authors: KATSUMOTO S OIWA A IYE Y OHNO H MATSUKURA F SHEN A SUGAWARA Y
Citation: S. Katsumoto et al., STRONGLY ANISOTROPIC HOPPING CONDUCTION IN (GA, MN)AS GAAS/, Physica status solidi. b, Basic research, 205(1), 1998, pp. 115-118
GIANT NEGATIVE MAGNETORESISTANCE OF (GA,MN)AS GAAS IN THE VICINITY OFA METAL-INSULATOR-TRANSITION/
Authors: OIWA A KATSUMOTO S ENDO A HIRASAWA M IYE Y OHNO H MATSUKURA F SHEN A SUGAWARA Y
Citation: A. Oiwa et al., GIANT NEGATIVE MAGNETORESISTANCE OF (GA,MN)AS GAAS IN THE VICINITY OFA METAL-INSULATOR-TRANSITION/, Physica status solidi. b, Basic research, 205(1), 1998, pp. 167-171
INTERLAYER EXCHANGE IN (GA,MN)AS (AL,GA)AS/(GA,MN)AS SEMICONDUCTING FERROMAGNET/NONMAGNET/FERROMAGNET TRILAYER STRUCTURES/
Authors: AKIBA N MATSUKURA F SHEN A OHNO Y OHNO H OIWA A KATSUMOTO S IYE Y
Citation: N. Akiba et al., INTERLAYER EXCHANGE IN (GA,MN)AS (AL,GA)AS/(GA,MN)AS SEMICONDUCTING FERROMAGNET/NONMAGNET/FERROMAGNET TRILAYER STRUCTURES/, Applied physics letters, 73(15), 1998, pp. 2122-2124
GROWTH AND PROPERTIES OF (GA, MN) AS - A NEW III-V DILUTED MAGNETIC SEMICONDUCTOR
Authors: MATSUKURA F OIWA A SHEN A SUGAWARA Y AKIBA N KUROIWA T OHNO H ENDO A KATSUMOTO S IYE Y
Citation: F. Matsukura et al., GROWTH AND PROPERTIES OF (GA, MN) AS - A NEW III-V DILUTED MAGNETIC SEMICONDUCTOR, Applied surface science, 114, 1997, pp. 178-182
EPITAXY AND PROPERTIES OF INMNAS ALGASB DILUTED MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES/
Authors: SHEN A MATSUKURA F SUGAWARA Y KUROIWA T OHNO H OIWA A ENDO A KATSUMOTO S IYE Y
Citation: A. Shen et al., EPITAXY AND PROPERTIES OF INMNAS ALGASB DILUTED MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES/, Applied surface science, 114, 1997, pp. 183-188
NONMETAL-METAL-NONMETAL TRANSITION AND LARGE NEGATIVE MAGNETORESISTANCE IN (GA, MN)AS GAAS/
Authors: OIWA A KATSUMOTO S ENDO A HIRASAWA M IYE Y OHNO H MATSUKURA F SHEN A SUGAWARA Y
Citation: A. Oiwa et al., NONMETAL-METAL-NONMETAL TRANSITION AND LARGE NEGATIVE MAGNETORESISTANCE IN (GA, MN)AS GAAS/, Solid state communications, 103(4), 1997, pp. 209-213
FERROMAGNETIC ORDER INDUCED BY PHOTOGENERATED CARRIERS IN MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES OF (IN,MN)AS GASB/
Authors: KOSHIHARA S OIWA A HIRASAWA M KATSUMOTO S IYE Y URANO C TAKAGI H MUNEKATA H
Citation: S. Koshihara et al., FERROMAGNETIC ORDER INDUCED BY PHOTOGENERATED CARRIERS IN MAGNETIC III-V SEMICONDUCTOR HETEROSTRUCTURES OF (IN,MN)AS GASB/, Physical review letters, 78(24), 1997, pp. 4617-4620
EPITAXY OF (GA, MN)AS, A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS
Authors: SHEN A OHNO H MATSUKURA F SUGAWARA Y AKIBA N KUROIWA T OIWA A ENDO A KATSUMOTO S IYE Y
Citation: A. Shen et al., EPITAXY OF (GA, MN)AS, A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS, Journal of crystal growth, 175, 1997, pp. 1069-1074
LIGHT-INDUCED FERROMAGNETISM IN III-V-BASED DILUTED MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES
Authors: MUNEKATA H ABE T KOSHIHARA S OIWA A HIRASAWA M KATSUMOTO S IYE Y URANO C TAKAGI H
Citation: H. Munekata et al., LIGHT-INDUCED FERROMAGNETISM IN III-V-BASED DILUTED MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES, Journal of applied physics, 81(8), 1997, pp. 4862-4864
(GA,MN)AS - A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS
Authors: OHNO H SHEN A MATSUKURA F OIWA A ENDO A KATSUMOTO S IYE Y
Citation: H. Ohno et al., (GA,MN)AS - A NEW DILUTED MAGNETIC SEMICONDUCTOR-BASED ON GAAS, Applied physics letters, 69(3), 1996, pp. 363-365
Risultati: 1-11 |