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Results: 1-14 |
Results: 14

Authors: JUNGE KE VOSS NR LANGE R DOLAN JM ZOLLNER S DASHIELL M HITS DA ORNER BA JONCZYK R KOLODZEY J
Citation: Ke. Junge et al., OPTICAL-PROPERTIES AND BAND-STRUCTURE OF GE1-YCY AND GE-RICH SI1-X-YGEXCY ALLOYS, Thin solid films, 313, 1998, pp. 172-176

Authors: SHAO XP ROMMEL SL ORNER BA FENG H DASHIELL MW TROEGER RT KOLODZEY J BERGER PR LAURSEN T
Citation: Xp. Shao et al., 1.3 MU-M PHOTORESPONSIVITY IN SI-BASED GE1-XCX PHOTODIODES, Applied physics letters, 72(15), 1998, pp. 1860-1862

Authors: SHAO XP ROMMEL SL ORNER BA KOLODZEY J BERGER PR
Citation: Xp. Shao et al., A P-GE1-XCX N-SI HETEROJUNCTION DIODE CROWN BY MOLECULAR-BEAM EPITAXY/, IEEE electron device letters, 18(9), 1997, pp. 411-413

Authors: KOLODZEY J CHEN F ORNER BA GUERIN D SHAH SI
Citation: J. Kolodzey et al., ENERGY-BAND OFFSETS OF SIGEC HETEROJUNCTIONS, Thin solid films, 302(1-2), 1997, pp. 201-203

Authors: ORNER BA KOLODZEY J
Citation: Ba. Orner et J. Kolodzey, SI1-X-YGEXCY ALLOY BAND STRUCTURES BY LINEAR COMBINATION OF ATOMIC ORBITALS, Journal of applied physics, 81(10), 1997, pp. 6773-6780

Authors: CHEN F ORNER BA GUERIN D KHAN A BERGER PR SHAH SI KOLODZEY J
Citation: F. Chen et al., CURRENT TRANSPORT CHARACTERISTICS OF SIGEC SI HETEROJUNCTION DIODE/, IEEE electron device letters, 17(12), 1996, pp. 589-591

Authors: ORNER BA KHAN A HITS D CHEN F ROE K PICKETT J SHAO X WILSON RG BERGER PR KOLODZEY J
Citation: Ba. Orner et al., OPTICAL-PROPERTIES OF GE1-YCY ALLOYS, Journal of electronic materials, 25(2), 1996, pp. 297-300

Authors: CHEN F WAITE MM SHAH SI ORNER BA IYER SS KOLODZEY J
Citation: F. Chen et al., MEASUREMENTS OF THE ENERGY-BAND OFFSETS OF SI1-XGEX SI AND GE1-YCY/GEHETEROJUNCTIONS/, Applied surface science, 104, 1996, pp. 615-620

Authors: ORNER BA HITS D KOLODZEY J GUARIN FJ POWELL AR IYER SS
Citation: Ba. Orner et al., OPTICAL-ABSORPTION IN ALLOYS OF SI, GE, C, AND SN, Journal of applied physics, 79(11), 1996, pp. 8656-8659

Authors: JUNGE KE LANGE R DOLAN JM ZOLLNER S DASHIELL M ORNER BA KOLODZEY J
Citation: Ke. Junge et al., DIELECTRIC RESPONSE OF THICK LOW DISLOCATION-DENSITY GE EPILAYERS GROWN ON (001)SI, Applied physics letters, 69(26), 1996, pp. 4084-4086

Authors: ORNER BA OLOWOLAFE J ROE K KOLODZEY J LAURSEN T MAYER JW SPEAR J
Citation: Ba. Orner et al., BAND-GAP OF GE RICH SI1-X-YGEXCY ALLOYS, Applied physics letters, 69(17), 1996, pp. 2557-2559

Authors: KOLODZEY J ONEIL PA ZHANG S ORNER BA ROE K UNRUH KM SWANN CP WAITE MM
Citation: J. Kolodzey et al., GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY (VOL 67, PG 1865, 1995), Applied physics letters, 68(8), 1996, pp. 1168-1168

Authors: KOLODZEY J BERGER PR ORNER BA HITS D CHEN F KHAN A SHAO X WAITE MM SHAH SI SWANN CP UNRUH KM
Citation: J. Kolodzey et al., OPTICAL AND ELECTRONIC-PROPERTIES OF SIGEC ALLOYS GROWN ON SI SUBSTRATE, Journal of crystal growth, 157(1-4), 1995, pp. 386-391

Authors: KOLODZEY J ONEIL PA ZHANG S ORNER BA ROE K UNRUH KM SWANN CP WAITE MM SHAH SI
Citation: J. Kolodzey et al., GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Applied physics letters, 67(13), 1995, pp. 1865-1867
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