ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-44

Results: 1-25/44

INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES

Authors: WANG JJ LAMBERS ES PEARTON SJ OSTLING M ZETTERLING CM GROW JM REN F SHUL RJ

Citation: Jj. Wang et al., INDUCTIVELY-COUPLED PLASMA-ETCHING OF BULK 6H-SIC AND THIN-FILM SICN IN NF3 CHEMISTRIES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2204-2209

MASS AND ENERGY-DISPERSIVE ELASTIC RECOIL DETECTION STUDIES OF LOW-TEMPERATURE SI PD/GAAS AND SI/PD/ALXGA(1-X)AS INTERFACIAL REACTIONS/

Authors: ZHANG YW HULT M PERSSON L WHITLOW HJ ANDERSSON M BUBB IF ELBOUANANI M JOHNSTON PN WALKER SR COHEN DD DYTLEWSKI N OSTLING M ZARING C

Citation: Yw. Zhang et al., MASS AND ENERGY-DISPERSIVE ELASTIC RECOIL DETECTION STUDIES OF LOW-TEMPERATURE SI PD/GAAS AND SI/PD/ALXGA(1-X)AS INTERFACIAL REACTIONS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 138, 1998, pp. 719-723

JUNCTION BARRIER SCHOTTKY DIODES IN 6H SIC

Authors: ZETTERLING CM DAHLQUIST F LUNDBERG N OSTLING M ROTTNER K RAMBERG L

Citation: Cm. Zetterling et al., JUNCTION BARRIER SCHOTTKY DIODES IN 6H SIC, Solid-state electronics, 42(9), 1998, pp. 1757-1759

HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS

Authors: WANG JJ LAMBERS ES PEARTON SJ OSTLING M ZETTERLING CM GROW JM REN F

Citation: Jj. Wang et al., HIGH-RATE ETCHING OF SIC AND SICN IN NF3 INDUCTIVELY-COUPLED PLASMAS, Solid-state electronics, 42(5), 1998, pp. 743-747

A NEW SET OF INITIAL CONDITIONS FOR FAST AND ACCURATE CALCULATION OF BASE TRANSIT-TIME AND COLLECTOR CURRENT-DENSITY IN BIPOLAR-TRANSISTORS

Authors: MA PX ZHANG SL OSTLING M

Citation: Px. Ma et al., A NEW SET OF INITIAL CONDITIONS FOR FAST AND ACCURATE CALCULATION OF BASE TRANSIT-TIME AND COLLECTOR CURRENT-DENSITY IN BIPOLAR-TRANSISTORS, Solid-state electronics, 42(11), 1998, pp. 2023-2026

INFLUENCE OF THE ADDITION OF CO AND NI ON THE FORMATION OF EPITAXIAL SEMICONDUCTING BETA-FESI2 - COMPARISON OF DIFFERENT EVAPORATION METHODS

Authors: MANGELINCK D WANG L LIN C GAS P GRAHN J OSTLING M

Citation: D. Mangelinck et al., INFLUENCE OF THE ADDITION OF CO AND NI ON THE FORMATION OF EPITAXIAL SEMICONDUCTING BETA-FESI2 - COMPARISON OF DIFFERENT EVAPORATION METHODS, Journal of applied physics, 83(8), 1998, pp. 4193-4201

AVALANCHE INJECTION IN HIGH-VOLTAGE SI PIN DIODES

Authors: DOMEIJ M BREITHOLTZ B LINNROS J OSTLING M

Citation: M. Domeij et al., AVALANCHE INJECTION IN HIGH-VOLTAGE SI PIN DIODES, Physica scripta. T, T69, 1997, pp. 134-137

INVESTIGATION OF ALUMINUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON SILICON

Authors: ZETTERLING CM OSTLING M WONGCHOTIGUL K SPENCER MG TANG X HARRIS CI NORDELL N WONG SS

Citation: Cm. Zetterling et al., INVESTIGATION OF ALUMINUM NITRIDE GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION ON SILICON, Journal of applied physics, 82(6), 1997, pp. 2990-2995

CHARACTERIZATION OF IN-SITU PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS GROWN BY DISILANE-BASED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Authors: GRAHN JV PEJNEFORS J SANDEN M ZHANG SL OSTLING M

Citation: Jv. Grahn et al., CHARACTERIZATION OF IN-SITU PHOSPHORUS-DOPED POLYCRYSTALLINE SILICON FILMS GROWN BY DISILANE-BASED LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Journal of the Electrochemical Society, 144(11), 1997, pp. 3952-3958

INFLUENCE OF GROWTH-CONDITIONS ON ELECTRICAL CHARACTERISTICS OF ALN ON SIC

Authors: ZETTERLING CM OSTLING M NORDELL N SCHON O DESCHLER M

Citation: Cm. Zetterling et al., INFLUENCE OF GROWTH-CONDITIONS ON ELECTRICAL CHARACTERISTICS OF ALN ON SIC, Applied physics letters, 70(26), 1997, pp. 3549-3551

RECOIL SPECTROMETRY OF THIN-FILM REACTIONS IN THE PD INP SYSTEM/

Authors: PERSSON L ELBOUANANI M HULT M JONSSON P WHITLOW HJ ANDERSSON M GEORGSSON K BUBB IF JOHNSTON PN WALKER SR COHEN DD DYTLEWSKI N ZARING C OSTLING M

Citation: L. Persson et al., RECOIL SPECTROMETRY OF THIN-FILM REACTIONS IN THE PD INP SYSTEM/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 14(4), 1996, pp. 2405-2413

OPTIMAL TRANSITIONS IN BETA-FESI2 FILMS

Authors: WANG LW OSTLING M YANG K QIN LH LIN CL CHEN XD ZOU SC ZHENG YX QIAN YH

Citation: Lw. Wang et al., OPTIMAL TRANSITIONS IN BETA-FESI2 FILMS, Physical review. B, Condensed matter, 54(16), 1996, pp. 11126-11128

A NOVEL UMOS CAPACITOR TEST STRUCTURE FOR SIC DEVICES

Authors: ZETTERLING CM OSTLING M

Citation: Cm. Zetterling et M. Ostling, A NOVEL UMOS CAPACITOR TEST STRUCTURE FOR SIC DEVICES, Solid-state electronics, 39(9), 1996, pp. 1396-1397

THERMALLY STABLE LOW OHMIC CONTACTS TO P-TYPE 6H-SIC USING COBALT SILICIDES

Authors: LUNDBERG N OSTLING M

Citation: N. Lundberg et M. Ostling, THERMALLY STABLE LOW OHMIC CONTACTS TO P-TYPE 6H-SIC USING COBALT SILICIDES, Solid-state electronics, 39(11), 1996, pp. 1559-1565

A CLARIFICATION OF OPTICAL-TRANSITION OF BETA-FESI2 FILM

Authors: WANG LW LIN CL CHEN XD ZOU SC QIN LH SHI HT SHEN WZ OSTLING M

Citation: Lw. Wang et al., A CLARIFICATION OF OPTICAL-TRANSITION OF BETA-FESI2 FILM, Solid state communications, 97(5), 1996, pp. 385-388

INTERFACIAL REACTION STUDIES OF CR, NI, TI, AND PT METALLIZATION ON INP

Authors: PERSSON L ELBOUANANI M HULT M WHITLOW HJ ANDERSSON M BUBB IF JOHNSTON PN WALKER SR COHEN DD DYTLEWSKI N ZARING C OSTLING M

Citation: L. Persson et al., INTERFACIAL REACTION STUDIES OF CR, NI, TI, AND PT METALLIZATION ON INP, Journal of applied physics, 80(6), 1996, pp. 3346-3354

CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN SCHOTTKY DIODES TO 6H-SIC

Authors: LUNDBERG N OSTLING M TAGTSTROM P JANSSON U

Citation: N. Lundberg et al., CHEMICAL-VAPOR-DEPOSITION OF TUNGSTEN SCHOTTKY DIODES TO 6H-SIC, Journal of the Electrochemical Society, 143(5), 1996, pp. 1662-1667

ENHANCED FORMATION OF THE C54 PHASE OF TISI2 BY AN INTERPOSED LAYER OF MOLYBDENUM

Authors: MOUROUX A ZHANG SL KAPLAN W NYGREN S OSTLING M PETERSSON CS

Citation: A. Mouroux et al., ENHANCED FORMATION OF THE C54 PHASE OF TISI2 BY AN INTERPOSED LAYER OF MOLYBDENUM, Applied physics letters, 69(7), 1996, pp. 975-977

ELECTRICAL CHARACTERIZATION OF THE BETA-FESI2 SI HETEROJUNCTION AFTERTHERMAL-OXIDATION/

Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, ELECTRICAL CHARACTERIZATION OF THE BETA-FESI2 SI HETEROJUNCTION AFTERTHERMAL-OXIDATION/, Applied physics letters, 68(1), 1996, pp. 105-107

DEEP LEVELS IN SILICON AFTER IRON SILICIDE FORMATION

Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, DEEP LEVELS IN SILICON AFTER IRON SILICIDE FORMATION, Semiconductor science and technology, 10(12), 1995, pp. 1645-1651

EMPIRICAL CHARACTERIZATION OF MASS-DISTRIBUTION BROADENING IN TOF-E RECOIL SPECTROMETRY

Authors: HULT M BOUANANI ME PERSSON L WHITLOW HJ ANDERSSON M ZARING C OSTLING M COHEN DD DYTLEWSKI N BUBB IF JOHNSTON PN WALKER SR

Citation: M. Hult et al., EMPIRICAL CHARACTERIZATION OF MASS-DISTRIBUTION BROADENING IN TOF-E RECOIL SPECTROMETRY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 101(3), 1995, pp. 263-266

METAL INP THIN-FILM REACTIONS - STUDIES USING MASS AND ENERGY-DISPERSIVE RECOIL SPECTROMETRY/

Authors: WHITLOW HJ ANDERSSON M HULT M PERSSON L ELBOUANANI M OSTLING M ZARING C LUNDBERG N COHEN DD DYTLEWSKI N JOHNSTON PN BUBB IF WALKER SR

Citation: Hj. Whitlow et al., METAL INP THIN-FILM REACTIONS - STUDIES USING MASS AND ENERGY-DISPERSIVE RECOIL SPECTROMETRY/, Vacuum, 46(7), 1995, pp. 737-738

CARRIER TRANSPORT ACROSS THE BETA-FESI2 SI HETEROJUNCTION/

Authors: ERLESAND U OSTLING M

Citation: U. Erlesand et M. Ostling, CARRIER TRANSPORT ACROSS THE BETA-FESI2 SI HETEROJUNCTION/, Solid-state electronics, 38(6), 1995, pp. 1143-1149

COSI2 OHMIC CONTACTS TO N-TYPE 6H-SIC

Authors: LUNDBERG N OSTLING M

Citation: N. Lundberg et M. Ostling, COSI2 OHMIC CONTACTS TO N-TYPE 6H-SIC, Solid-state electronics, 38(12), 1995, pp. 2023-2028

RECOIL SPECTROMETRY - ION ACCELERATOR BASED ELEMENTAL CHARACTERIZATION OF SURFACE-LAYERS

Authors: WHITLOW HJ ANDERSSON M HULT M PERSSON L ELBOUANANI M OSTLING M ZARING C LUNDBERG N COHEN DD DYTLEWSKI N JOHNSTON PN BUBB IF WALKER SR JOHANSON E HOGMARK S INGEMARSSON PA

Citation: Hj. Whitlow et al., RECOIL SPECTROMETRY - ION ACCELERATOR BASED ELEMENTAL CHARACTERIZATION OF SURFACE-LAYERS, Mikrochimica acta, 120(1-4), 1995, pp. 171-181

Risultati: 1-25 | 26-44