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Results: 26-50/61
Authors:
SARANIN AA
NUMATA T
KUBO O
KATAYAMA M
KATAYAMA I
OURA K
Citation: Aa. Saranin et al., STM OBSERVATION OF THE ATOMIC-HYDROGEN ADSORPTION ON THE SI(111)4X1-IN SURFACE, Applied surface science, 114, 1997, pp. 354-359
Authors:
RYU JT
KUI K
TANAKA Y
KATAYAMA M
OURA K
KATAYAMA I
Citation: Jt. Ryu et al., TOF-ICISS OBSERVATION OF PB GROWTH ON THE SI(111)-ROOT-3X-ROOT-3-AG SURFACE, Applied surface science, 114, 1997, pp. 393-397
Authors:
WATAMORI M
MAEDA Y
KUBO O
OURA K
Citation: M. Watamori et al., A NEW METHOD FOR THE DETECTION OF NATIVE-OXIDE ON SI WITH COMBINED USE OF O-16(ALPHA,ALPHA)O-16 RESONANCE AND CHANNELING, Applied surface science, 114, 1997, pp. 403-407
Authors:
HONDA S
CHIHARA K
WATAMORI M
OURA K
Citation: S. Honda et al., DEPTH PROFILING OF OXYGEN-CONTENT OF INDIUM TIN OXIDE FABRICATED BY BIAS SPUTTERING, Applied surface science, 114, 1997, pp. 408-411
Authors:
OHBA Y
KATAYAMA I
YAMAMOTO Y
WATAMORI M
OURA K
Citation: Y. Ohba et al., RECONSTRUCTION AND GROWTH OF AG ON HYDROGEN-TERMINATED SI(111) SURFACES, Applied surface science, 114, 1997, pp. 448-452
Authors:
SARANIN AA
ZOTOV AV
IGNATOVICH KV
LIFSHITS VG
NUMATA T
KUBO O
TANI H
KATAYAMA M
OURA K
Citation: Aa. Saranin et al., STRUCTURAL MODEL FOR THE SI(111)-4X1-IN RECONSTRUCTION, Physical review. B, Condensed matter, 56(3), 1997, pp. 1017-1020
Authors:
SARANIN AA
NUMATA T
KUBO O
TANI H
KATAYAMA M
LIFSHITS VG
OURA K
Citation: Aa. Saranin et al., STM TIP-INDUCED DIFFUSION OF IN ATOMS ON THE SI(111)ROOT-3X-ROOT-3-INSURFACE, Physical review. B, Condensed matter, 56(12), 1997, pp. 7449-7454
Authors:
SARANIN AA
KHRAMTSOVA EA
IGNATOVICH KV
LIFSHITS VG
NUMATA T
KUBO O
KATAYAMA M
KATAYAMA I
OURA K
Citation: Aa. Saranin et al., INDIUM-INDUCED SI(111)4X1 SILICON SUBSTRATE ATOM RECONSTRUCTION, Physical review. B, Condensed matter, 55(8), 1997, pp. 5353-5359
Authors:
FUSE T
KAWAMOTO K
KUJIME S
SHIIZAKI T
KATAYAMA M
OURA K
Citation: T. Fuse et al., QUASI-MEDIUM ENERGY ION-SCATTERING SPECTROSCOPY OBSERVATION OF SURFACE SEGREGATION OF GE DELTA-DOPED LAYER DURING SI MOLECULAR-BEAM EPITAXY, Surface science, 393(1-3), 1997, pp. 93-98
Authors:
ZOTOV AV
SARANIN AA
IGNATOVICH KV
LIFSHITS VG
KATAYAMA M
OURA K
Citation: Av. Zotov et al., SI(100)4X3 IN SURFACE PHASE - IDENTIFICATION OF SILICON SUBSTRATE ATOM RECONSTRUCTION, Surface science, 391(1-3), 1997, pp. 1188-1193
Authors:
SARANIN AA
ZOTOV AV
NUMATA T
KUBO O
IGNATOVICH KV
LIFSHITS VG
KATAYAMA M
OURA K
Citation: Aa. Saranin et al., STRUCTURAL TRANSFORMATIONS AT ROOM-TEMPERATURE ADSORPTION OF IN ON SI(111)ROOT-3X-ROOT-3-IN SURFACE - LEED-AES-STM STUDY, Surface science, 388(1-3), 1997, pp. 299-307
Authors:
SHOJI F
OURA K
Citation: F. Shoji et K. Oura, HYDROGEN ANALYSIS OF SILICON SURFACES BY LOW-ENERGY ION-BEAMS, Journal of nuclear materials, 248, 1997, pp. 443-447
Authors:
OURA K
OHNISHI H
YAMAMOTO Y
KATAYAMA I
OHBA Y
Citation: K. Oura et al., ATOMIC-HYDROGEN-INDUCED AG CLUSTER FORMATION ON SI(111)-ROOT-3X-ROOT-3-AG SURFACE OBSERVED BY SCANNING-TUNNELING-MICROSCOPY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(2), 1996, pp. 988-991
Authors:
WATAMORI M
OURA K
HIRAO T
SASABE K
Citation: M. Watamori et al., BACKSCATTERING ANALYSIS OF THIN SIO2-FILMS ON SI USING O-16(ALPHA,ALPHA)O-16 3.045 MEV RESONANCE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 228-232
CHANNELING ANALYSIS OF OXYGEN IN OXIDE MATERIALS USING O-16(ALPHA,ALPHA)O-16 RESONANT BACKSCATTERING
Authors:
WATAMORI M
OURA K
HIRAO T
SASABE K
Citation: M. Watamori et al., CHANNELING ANALYSIS OF OXYGEN IN OXIDE MATERIALS USING O-16(ALPHA,ALPHA)O-16 RESONANT BACKSCATTERING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 233-237
Authors:
TANAKA Y
MORISHITA H
RYU JT
KATAYAMA I
OURA K
Citation: Y. Tanaka et al., THE INITIAL-STAGE OF PB THIN-FILM GROWTH ON SI(111) SURFACE STUDIED BY TOF-ICISS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 530-532
Authors:
SHOJI F
YAMADA A
OURA K
Citation: F. Shoji et al., INELASTIC ENERGY-LOSS OF RECOILED HYDROGEN-IONS IN LOW-ENERGY HE+, NE+ AND AR+ COLLISIONS WITH HYDROGENATED SILICON SURFACE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 115(1-4), 1996, pp. 196-199
Authors:
HONDA S
WATAMORI M
OURA K
Citation: S. Honda et al., THE EFFECTS OF OXYGEN-CONTENT ON ELECTRICAL AND OPTICAL-PROPERTIES OFINDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING, Thin solid films, 282(1-2), 1996, pp. 206-208
Authors:
KAWAMOTO K
MORI T
KUJIME S
OURA K
Citation: K. Kawamoto et al., OBSERVATION OF THE DIFFUSION OF AG ATOMS THROUGH AN A-SI LAYER ON SI(111) BY LOW-ENERGY ION-SCATTERING, Surface science, 363(1-3), 1996, pp. 156-160
Authors:
TANAKA Y
MORISHITA H
RYU JT
KATAYAMA I
OURA K
Citation: Y. Tanaka et al., THIN-FILM GROWTH-MODE ANALYSIS BY LOW-ENERGY ION-SCATTERING, Surface science, 363(1-3), 1996, pp. 161-165
Authors:
KAWAMOTO K
INARI K
MORI T
OURA K
Citation: K. Kawamoto et al., A NEW APPARATUS FOR IMPACT COLLISION ION-SCATTERING SPECTROSCOPY, JPN J A P 1, 34(9A), 1995, pp. 4917-4919
Authors:
KAWAMOTO K
OURA K
Citation: K. Kawamoto et K. Oura, SCATTERING PROCESS OF LOW-ENERGY IONS FROM BINARY COMPOUND SURFACES AT 180-DEGREES, JPN J A P 1, 34(9A), 1995, pp. 4929-4931
Authors:
HONDA S
TSUJIMOTO A
WATAMORI M
OURA K
Citation: S. Honda et al., EFFECTS OF POSTANNEALING ON OXYGEN-CONTENT OF INDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING, JPN J A P 2, 34(10B), 1995, pp. 1386-1389
Authors:
WATAMORI M
OURA K
NAKAMURA T
Citation: M. Watamori et al., QUANTITATIVE DEPTH PROFILING OF OXYGEN IN HOMOEPITAXIAL SRTIO3 FILMS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1293-1298
Authors:
OHNISHI H
YAMAMOTO Y
OURA K
KATAYAMA I
OHBA Y
Citation: H. Ohnishi et al., SCANNING-TUNNELING-MICROSCOPY OBSERVATION OF HYDROGEN-INDUCED AG CLUSTER FORMATION ON THE SI(111) SURFACES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1438-1442