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Results: 1-25 | 26-27
Results: 1-25/27
MECHANISMS FOR TOTAL-DOSE SENSITIVITY TO PREIRRADIATION THERMAL-STRESS IN BIPOLAR LINEAR MICROCIRCUITS
Authors: PEASE RL SHANEYFELT M WINOKUR P FLEETWOOD D GORELICK J MCCLURE S CLARK S COHN L ALEXANDER D
Citation: Rl. Pease et al., MECHANISMS FOR TOTAL-DOSE SENSITIVITY TO PREIRRADIATION THERMAL-STRESS IN BIPOLAR LINEAR MICROCIRCUITS, IEEE transactions on nuclear science, 45(3), 1998, pp. 1425-1430
RADIATION-INDUCED GAIN DEGRADATION IN LATERAL PNP BJTS WITH LIGHTLY AND HEAVILY-DOPED EMITTERS
Authors: WU A SCHRIMPF RD BARNABY HJ FLEETWOOD DM PEASE RL KOSIER SL
Citation: A. Wu et al., RADIATION-INDUCED GAIN DEGRADATION IN LATERAL PNP BJTS WITH LIGHTLY AND HEAVILY-DOPED EMITTERS, IEEE transactions on nuclear science, 44(6), 1997, pp. 1914-1921
A PROPOSED HARDNESS ASSURANCE TEST METHODOLOGY FOR BIPOLAR LINEAR CIRCUITS AND DEVICES IN A SPACE IONIZING-RADIATION ENVIRONMENT
Authors: PEASE RL COHN LM FLEETWOOD DM GEHLHAUSEN MA TURFLINGER TL BROWN DB JOHNSTON AH
Citation: Rl. Pease et al., A PROPOSED HARDNESS ASSURANCE TEST METHODOLOGY FOR BIPOLAR LINEAR CIRCUITS AND DEVICES IN A SPACE IONIZING-RADIATION ENVIRONMENT, IEEE transactions on nuclear science, 44(6), 1997, pp. 1981-1988
HARDNESS ASSURANCE TESTING OF BIPOLAR JUNCTION TRANSISTORS AT ELEVATED IRRADIATION TEMPERATURES
Authors: WITCZAK SC SCHRIMPF RD FLEETWOOD DM GALLOWAY KF LACOE RC MAYER DC PUHL JM PEASE RL SUEHLE JS
Citation: Sc. Witczak et al., HARDNESS ASSURANCE TESTING OF BIPOLAR JUNCTION TRANSISTORS AT ELEVATED IRRADIATION TEMPERATURES, IEEE transactions on nuclear science, 44(6), 1997, pp. 1989-2000
IMPACT OF AGING ON RADIATION HARDNESS
Authors: SHANEYFELT MR WINOKUR PS FLEETWOOD DM HASH GL SCHWANK JR SEXTON FW PEASE RL
Citation: Mr. Shaneyfelt et al., IMPACT OF AGING ON RADIATION HARDNESS, IEEE transactions on nuclear science, 44(6), 1997, pp. 2040-2047
DOSE ENHANCEMENT IN A ROOM CO-60 SOURCE
Authors: SIMONS M PEASE RL FLEETWOOD DM SCHWANK JR KRZESNIAK MF
Citation: M. Simons et al., DOSE ENHANCEMENT IN A ROOM CO-60 SOURCE, IEEE transactions on nuclear science, 44(6), 1997, pp. 2052-2057
SEGR - A UNIQUE FAILURE MODE FOR POWER MOSFETS IN SPACECRAFT
Authors: ALLENSPACH M BREWS JR GALLOWAY KE JOHNSON GH SCHRIMPF RD PEASE RL TITUS JL WHEATLEY CF
Citation: M. Allenspach et al., SEGR - A UNIQUE FAILURE MODE FOR POWER MOSFETS IN SPACECRAFT, Microelectronics and reliability, 36(11-12), 1996, pp. 1871-1874
INFLUENCE OF ION-BEAM ENERGY ON SEGR FAILURE THRESHOLDS OF VERTICAL POWER MOSFETS
Authors: TITUS JL WHEATLEY CF ALLENSPACH M SCHRIMPF RD BURTON DI BREWS JR GALLOWAY KF PEASE RL
Citation: Jl. Titus et al., INFLUENCE OF ION-BEAM ENERGY ON SEGR FAILURE THRESHOLDS OF VERTICAL POWER MOSFETS, IEEE transactions on nuclear science, 43(6), 1996, pp. 2938-2943
MODELING IONIZING-RADIATION INDUCED GAIN DEGRADATION OF THE LATERAL PNP BIPOLAR JUNCTION TRANSISTOR
Authors: SCHMIDT DM WU A SCHRIMPF RD FLEETWOOD DM PEASE RL
Citation: Dm. Schmidt et al., MODELING IONIZING-RADIATION INDUCED GAIN DEGRADATION OF THE LATERAL PNP BIPOLAR JUNCTION TRANSISTOR, IEEE transactions on nuclear science, 43(6), 1996, pp. 3032-3039
ANALYSIS OF BIPOLAR LINEAR CIRCUIT RESPONSE MECHANISMS FOR HIGH AND LOW-DOSE RATE TOTAL-DOSE IRRADIATIONS
Authors: BARNABY H TAUSCH HJ TURFLER R COLE P BAKER P PEASE RL
Citation: H. Barnaby et al., ANALYSIS OF BIPOLAR LINEAR CIRCUIT RESPONSE MECHANISMS FOR HIGH AND LOW-DOSE RATE TOTAL-DOSE IRRADIATIONS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3040-3048
ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS
Authors: WITCZAK SC SCHRIMPF RD GALLOWAY KF FLEETWOOD DM PEASE RL PUHL JM SCHMIDT DM COMBS WE SUEHLE JS
Citation: Sc. Witczak et al., ACCELERATED TESTS FOR SIMULATING LOW-DOSE RATE GAIN DEGRADATION OF LATERAL AND SUBSTRATE PNP BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3151-3160
ELEVATED-TEMPERATURE IRRADIATION OF BIPOLAR LINEAR MICROCIRCUITS
Authors: PEASE RL GEHLHAUSEN M
Citation: Rl. Pease et M. Gehlhausen, ELEVATED-TEMPERATURE IRRADIATION OF BIPOLAR LINEAR MICROCIRCUITS, IEEE transactions on nuclear science, 43(6), 1996, pp. 3161-3166
TOTAL-DOSE ISSUES FOR MICROELECTRONICS IN-SPACE SYSTEMS
Authors: PEASE RL
Citation: Rl. Pease, TOTAL-DOSE ISSUES FOR MICROELECTRONICS IN-SPACE SYSTEMS, IEEE transactions on nuclear science, 43(2), 1996, pp. 442-452
RELATION BETWEEN HIGGS AND WEINBERG ANGLES IN MINIMAL SUSY FROM DIOPHANTINE ANALYSIS
Authors: PEASE RL
Citation: Rl. Pease, RELATION BETWEEN HIGGS AND WEINBERG ANGLES IN MINIMAL SUSY FROM DIOPHANTINE ANALYSIS, International journal of theoretical physics, 34(2), 1995, pp. 183-188
COMPARISON OF IONIZING-RADIATION-INDUCED GAIN DEGRADATION IN LATERAL,SUBSTRATE, AND VERTICAL PNP BJTS
Authors: SCHMIDT DM FLEETWOOD DM SCHRIMPF RD PEASE RL GRAVES RJ JOHNSON GH GALLOWAY KF COMBS WE
Citation: Dm. Schmidt et al., COMPARISON OF IONIZING-RADIATION-INDUCED GAIN DEGRADATION IN LATERAL,SUBSTRATE, AND VERTICAL PNP BJTS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1541-1549
PLASTIC PACKAGING AND BURN-IN EFFECTS ON IONIZING DOSE-RESPONSE IN CMOS MICROCIRCUITS
Authors: CLARK SD BINGS JP MAHER MC WILLIAMS MK ALEXANDER DR PEASE RL
Citation: Sd. Clark et al., PLASTIC PACKAGING AND BURN-IN EFFECTS ON IONIZING DOSE-RESPONSE IN CMOS MICROCIRCUITS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1607-1614
HARDNESS-ASSURANCE ISSUES FOR LATERAL PNP BIPOLAR JUNCTION TRANSISTORS
Authors: SCHRIMPF RD GRAVES RJ SCHMIDT DM FLEETWOOD DM PEASE RL COMBS WE DELAUS M
Citation: Rd. Schrimpf et al., HARDNESS-ASSURANCE ISSUES FOR LATERAL PNP BIPOLAR JUNCTION TRANSISTORS, IEEE transactions on nuclear science, 42(6), 1995, pp. 1641-1649
SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE
Authors: ALLENSPACH M MOURET I TITUS JL WHEATLEY CF PEASE RL BREWS JR SCHRIMPF RD GALLOWAY KF
Citation: M. Allenspach et al., SINGLE-EVENT GATE-RUPTURE IN POWER MOSFETS - PREDICTION OF BREAKDOWN BIASES AND EVALUATION OF OXIDE THICKNESS DEPENDENCE, IEEE transactions on nuclear science, 42(6), 1995, pp. 1922-1927
IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION
Authors: TITUS JL WHEATLEY CF BURTON DI MOURET I ALLENSPACH M BREWS J SCHRIMPF R GALLOWAY K PEASE RL
Citation: Jl. Titus et al., IMPACT OF OXIDE THICKNESS ON SEGR FAILURE IN VERTICAL POWERMOSFETS - DEVELOPMENT OF A SEMIEMPIRICAL EXPRESSION, IEEE transactions on nuclear science, 42(6), 1995, pp. 1928-1934
HARDNESS ASSURANCE FOR SPACE SYSTEM MICROELECTRONICS
Authors: PEASE RL ALEXANDER DR
Citation: Rl. Pease et Dr. Alexander, HARDNESS ASSURANCE FOR SPACE SYSTEM MICROELECTRONICS, Radiation physics and chemistry, 43(1-2), 1994, pp. 191-204
BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS
Authors: KOSIER SL COMBS WE WEI A SCHRIMPF RD FLEETWOOD DM DELAUS M PEASE RL
Citation: Sl. Kosier et al., BOUNDING THE TOTAL-DOSE RESPONSE OF MODERN BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 1864-1870
PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES
Authors: FLEETWOOD DM KOSIER SL NOWLIN RN SCHRIMPF RD REBER RA DELAUS M WINOKUR PS WEI A COMBS WE PEASE RL
Citation: Dm. Fleetwood et al., PHYSICAL-MECHANISMS CONTRIBUTING TO ENHANCED BIPOLAR GAIN DEGRADATIONAT LOW-DOSE RATES, IEEE transactions on nuclear science, 41(6), 1994, pp. 1871-1883
DEPENDENCE OF TOTAL-DOSE RESPONSE OF BIPOLAR LINEAR MICROCIRCUITS ON APPLIED DOSE-RATE
Authors: MCCLURE S PEASE RL WILL W PERRY G
Citation: S. Mcclure et al., DEPENDENCE OF TOTAL-DOSE RESPONSE OF BIPOLAR LINEAR MICROCIRCUITS ON APPLIED DOSE-RATE, IEEE transactions on nuclear science, 41(6), 1994, pp. 2544-2549
COMPARISON OF HOT-CARRIER AND RADIATION-INDUCED INCREASES IN BASE CURRENT IN BIPOLAR-TRANSISTORS
Authors: PEASE RL KOSIER SL SCHRIMPF RD COMBS WE DAVEY M DELAUS M FLEETWOOD DM
Citation: Rl. Pease et al., COMPARISON OF HOT-CARRIER AND RADIATION-INDUCED INCREASES IN BASE CURRENT IN BIPOLAR-TRANSISTORS, IEEE transactions on nuclear science, 41(6), 1994, pp. 2567-2573
TOTAL-DOSE RESPONSE OF TRANSCONDUCTANCE IN MOSFETS AT LOW-TEMPERATURE
Authors: PEASE RL CLARK SD COLE PL KRIEG JF PICKEL JC
Citation: Rl. Pease et al., TOTAL-DOSE RESPONSE OF TRANSCONDUCTANCE IN MOSFETS AT LOW-TEMPERATURE, IEEE transactions on nuclear science, 41(3), 1994, pp. 549-554
Risultati: 1-25 | 26-27