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Results: 1-25/26
Authors:
BARNA A
PECZ B
MENYHARD M
Citation: A. Barna et al., AMORPHIZATION AND SURFACE-MORPHOLOGY DEVELOPMENT AT LOW-ENERGY ION MILLING, Ultramicroscopy, 70(3), 1998, pp. 161-171
Authors:
DAVID L
KOVACS B
MOJZES I
PECZ B
LABAR J
DOBOS L
Citation: L. David et al., ELECTRICAL AND STRUCTURAL CHARACTERIZATION OF NI GE/N-GAAS INTERFACE/, Vacuum, 50(3-4), 1998, pp. 395-398
Authors:
DAVID L
KOVACS B
MOJZES I
PECZ B
LABAR J
Citation: L. David et al., ELECTRICAL AND MICROSTRUCTURE ANALYSIS OF NI GE/N-GAAS INTERFACE/, Thin solid films, 323(1-2), 1998, pp. 212-216
Authors:
IVANEO J
HORVATH ZJ
VANTUYEN V
COLUZZA C
ALMEIDA J
TERRASI A
PECZ B
VINCZE G
MARGARITONDO G
Citation: J. Ivaneo et al., ELECTRICAL CHARACTERIZATION OF AU SIOX/N-GAAS JUNCTIONS/, Solid-state electronics, 42(2), 1998, pp. 229-233
Authors:
HALLIN C
KONSTANTINOV AO
PECZ B
KORDINA O
JANZEN E
Citation: C. Hallin et al., THE ORIGIN OF 3C POLYTYPE INCLUSIONS IN EPITAXIAL LAYERS OF SILICON-CARBIDE GROWN BY CHEMICAL-VAPOR-DEPOSITION, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1297-1300
Authors:
PAPAIOANNOU V
KOMNINOU P
DIMITRAKOPULOS GP
ZEKENTES K
PECZ B
KARAKOSTAS T
STOEMENOS J
Citation: V. Papaioannou et al., TOPOLOGY OF TWIN JUNCTIONS IN EPITAXIAL BETA-SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1362-1364
Authors:
PECZ B
RADNOCZI G
CASSETTE S
BRYLINSKI C
ARNODO C
NOBLANC O
Citation: B. Pecz et al., TEM STUDY OF NI AND NI2SI OHMIC CONTACTS TO SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1428-1431
Authors:
COBIANU C
SAVANIU C
BUIU O
DASCALU D
ZAHARESCU M
PARLOG C
VANDENBERG A
PECZ B
Citation: C. Cobianu et al., TIN DIOXIDE SOL-GEL DERIVED THAN FILMS DEPOSITED ON POROUS SILICON, Sensors and actuators. B, Chemical, 43(1-3), 1997, pp. 114-120
Authors:
PECZ B
DIFORTEPOISSON MA
TOTH L
RADNOCZI G
HUHN G
PAPAIOANNOU V
STOEMENOS J
Citation: B. Pecz et al., TRANSMISSION ELECTRON-MICROSCOPY CHARACTERIZATION OF METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN GAN LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 93-96
Authors:
MARINOVA T
KAKANAKOVAGEORGIEVA A
KRASTEV V
KAKANAKOV R
NESHEV M
KASSAMAKOVA L
NOBLANC O
ARNODO C
CASSETTE S
BRYLINSKI C
PECZ B
RADNOCZI G
VINCZE G
Citation: T. Marinova et al., NICKEL-BASED OHMIC CONTACTS ON SIC, Materials science & engineering. B, Solid-state materials for advanced technology, 46(1-3), 1997, pp. 223-226
Authors:
HALLIN C
YAKIMOVA R
PECZ B
GEORGIEVA A
MARINOVA T
KASAMAKOVA L
KAKANAKOV R
JANZEN E
Citation: C. Hallin et al., IMPROVED NI OHMIC CONTACT ON N-TYPE 4H-SIC, Journal of electronic materials, 26(3), 1997, pp. 119-122
Authors:
UTRIAINEN M
LEHTO S
NIINISTO L
DUCSO C
KHANH NQ
HORVATH ZE
BARSONY I
PECZ B
Citation: M. Utriainen et al., POROUS SILICON HOST MATRIX FOR DEPOSITION BY ATOMIC LAYER EPITAXY, Thin solid films, 297(1-2), 1997, pp. 39-42
Authors:
KONSTANTINOV AO
HALLIN C
PECZ B
KORDINA O
JANZEN E
Citation: Ao. Konstantinov et al., THE MECHANISM FOR CUBIC SIC FORMATION ON OFF-ORIENTED SUBSTRATES, Journal of crystal growth, 178(4), 1997, pp. 495-504
Authors:
HULTMAN L
LJUNGCRANTZ H
HALLIN C
JANZEN E
SUNDGREN JE
PECZ B
WALLENBERG LR
Citation: L. Hultman et al., GROWTH AND ELECTRONIC-PROPERTIES OF EPITAXIAL TIN THIN-FILMS ON 3C-SIC(001) AND 6H-SIC(0001) SUBSTRATES BY REACTIVE MAGNETRON SPUTTERING, Journal of materials research, 11(10), 1996, pp. 2458-2462
Authors:
JAROLI E
SZILAGYI E
KHANH NQ
PECZ B
Citation: E. Jaroli et al., ION-BEAM CHANNELING STUDY OF COBALT IMPLANTED SAPPHIRE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 118(1-4), 1996, pp. 123-127
Authors:
PECZ B
FRANGIS N
LOGOTHETIDIS S
ALEXANDROU I
BARNA PB
STOEMENOS J
Citation: B. Pecz et al., ELECTRON-MICROSCOPY CHARACTERIZATION OF TIN FILMS ON SI, GROWN BY DC-REACTIVE MAGNETRON SPUTTERING, Thin solid films, 268(1-2), 1995, pp. 57-63
Authors:
KOCSIS Z
VINCZE G
TOTH L
PECZ B
RIPKA G
MOJZES I
Citation: Z. Kocsis et al., STRUCTURAL CHARACTERIZATION OF EXCIMER-LASER TREATED POLYIMIDE FOIL, Physica status solidi. a, Applied research, 150(2), 1995, pp. 11-13
Authors:
ZEKENTES K
PAPAIOANNOU V
PECZ B
STOEMENOS J
Citation: K. Zekentes et al., EARLY STAGES OF GROWTH OF BETA-SIC ON SI BY MBE, Journal of crystal growth, 157(1-4), 1995, pp. 392-399
Authors:
BRAMLEY AP
MORLEY SM
GROVENOR CRM
PECZ B
Citation: Ap. Bramley et al., BUFFER LAYER FILM INTERACTIONS IN THE GROWTH OF TL2BA2CA1CU2OX FILMS ON CEO2 BUFFERED SAPPHIRE, Applied physics letters, 66(4), 1995, pp. 517-519
Authors:
GROVENOR CRM
MORLEY SM
BRAMLEY AP
OCONNOR JD
DEWHUGHES D
PECZ B
Citation: Crm. Grovenor et al., DEPOSITION OF TLBACACUO FILMS ON SAPPHIRE AND CEO2 SAPPHIRE SUBSTRATES/, Physica. C, Superconductivity, 235, 1994, pp. 715-716
Authors:
PECZ B
BARNA A
Citation: B. Pecz et A. Barna, REACTIVE ION MILLING - THINNING OF COMPOUND SEMICONDUCTORS, Vacuum, 45(1), 1994, pp. 1-3
Authors:
JARRENDAHL K
PECZ B
SUNDGREN JE
ARWIN H
Citation: K. Jarrendahl et al., GROWTH AND ELLIPSOMETRIC STUDIES OF PERIODIC AND CANTOR APERIODIC AMORPHOUS GE SI SUPERLATTICES/, Thin solid films, 240(1-2), 1994, pp. 7-13
Authors:
BARNA PB
ADAMIK M
SAFRAN G
PECZ B
BERGAUER A
BANGERT H
Citation: Pb. Barna et al., PECULIAR LAMELLAR STRUCTURE IN AL SINGLE-CRYSTALS GROWN IN OXYGEN-DOPED AL AND AL-SN THIN-FILMS, Physica status solidi. a, Applied research, 146(1), 1994, pp. 317-324
Authors:
JAROLI E
GYULAI J
PECZ B
VERESEGYHAZY R
RADNOCZI G
BARNA PB
Citation: E. Jaroli et al., THE EFFECT OF DEFECTS CAUSED BY XE ION-BOMBARDMENT ON THE STRUCTURE OF AU GAAS CONTACTS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 548-551
Authors:
RADNOCZI G
PECZ B
Citation: G. Radnoczi et B. Pecz, CRYSTALLIZATION OF ENCAPSULATED VERY THIN AMORPHOUS-GE LAYERS, Thin solid films, 232(1), 1993, pp. 68-72