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THERMAL DONOR FORMATION AND ANNIHILATION AT TEMPERATURES ABOVE 500-DEGREES-C IN CZOCHRALSKI-GROWN SI
Authors:
GOTZ W
PENSL G
ZULEHNER W
NEWMAN RC
MCQUAID SA
Citation: W. Gotz et al., THERMAL DONOR FORMATION AND ANNIHILATION AT TEMPERATURES ABOVE 500-DEGREES-C IN CZOCHRALSKI-GROWN SI, Journal of applied physics, 84(7), 1998, pp. 3561-3568
Authors:
SRIDHARA SG
CLEMEN LL
DEVATY RP
CHOYKE WJ
LARKIN DJ
KONG HS
TROFFER T
PENSL G
Citation: Sg. Sridhara et al., PHOTOLUMINESCENCE AND TRANSPORT STUDIES OF BORON IN 4H SIC, Journal of applied physics, 83(12), 1998, pp. 7909-7919
Authors:
ITOH H
TROFFER T
PEPPERMULLER C
PENSL G
Citation: H. Itoh et al., EFFECTS OF C OR SI COIMPLANTATION ON THE ELECTRICAL ACTIVATION OF B-ATOMS IMPLANTED IN 4H-SIC, Applied physics letters, 73(10), 1998, pp. 1427-1429
Authors:
SCHULZE N
BARRETT DL
PENSL G
Citation: N. Schulze et al., NEAR-EQUILIBRIUM GROWTH OF MICROPIPE-FREE 6H-SIC SINGLE-CRYSTALS BY PHYSICAL VAPOR TRANSPORT, Applied physics letters, 72(13), 1998, pp. 1632-1634
Authors:
HEYDEMANN VD
SCHULZE N
BARRETT DL
PENSL G
Citation: Vd. Heydemann et al., SUBLIMATION GROWTH OF 4H-SIC AND 6H-SIC BOULE CRYSTALS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1262-1265
Authors:
DALIBOR T
PENSL G
KIMOTO T
MATSUNAMI H
SRIDHARA S
DEVATY RP
CHOYKE WJ
Citation: T. Dalibor et al., RADIATION-INDUCED DEFECT CENTERS IN 4H SILICON-CARBIDE, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1333-1337
Authors:
FRISCHHOLZ M
ROTTNER K
SCHONER A
DALIBOR T
PENSL G
Citation: M. Frischholz et al., OBIC STUDIES ON 6H-SIC SCHOTTKY RECTIFIERS WITH DIFFERENT SURFACE PRETREATMENTS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1396-1399
Authors:
BASSLER M
PENSL G
AFANASEV V
Citation: M. Bassler et al., CARBON CLUSTER MODEL FOR ELECTRONIC STATES AT SIC SIO2 INTERFACES/, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1472-1475
Authors:
CHOYKE WJ
PENSL G
Citation: Wj. Choyke et G. Pensl, PHYSICAL-PROPERTIES OF SIC, MRS bulletin, 22(3), 1997, pp. 25-29
Authors:
CHOYKE WJ
MATSUNAMI H
PENSL G
Citation: Wj. Choyke et al., SPECIAL ISSUE ON FUNDAMENTAL QUESTIONS AND APPLICATIONS OF SIC .1. PREFACE, Physica status solidi. b, Basic research, 202(1), 1997, pp. 3-4
Authors:
DALIBOR T
PENSL G
NORDELL N
SCHONER A
Citation: T. Dalibor et al., ELECTRICAL-PROPERTIES OF THE TITANIUM ACCEPTOR IN SILICON-CARBIDE, Physical review. B, Condensed matter, 55(20), 1997, pp. 13618-13624
Authors:
CHOYKE WJ
MATSUNAMI H
PENSL G
Citation: Wj. Choyke et al., FUNDAMENTAL QUESTIONS AND APPLICATIONS OF SIC .2. PREFACE, Physica status solidi. a, Applied research, 162(1), 1997, pp. 3-4
Authors:
DALIBOR T
PENSL G
MATSUNAMI H
KIMOTO T
CHOYKE WJ
SCHONER A
NORDELL N
Citation: T. Dalibor et al., DEEP DEFECT CENTERS IN SILICON-CARBIDE MONITORED WITH DEEP-LEVEL TRANSIENT SPECTROSCOPY, Physica status solidi. a, Applied research, 162(1), 1997, pp. 199-225
Authors:
HEINDL J
STRUNK HP
HEYDEMANN VD
PENSL G
Citation: J. Heindl et al., MICROPIPES - HOLLOW TUBES IN SILICON-CARBIDE, Physica status solidi. a, Applied research, 162(1), 1997, pp. 251-262
Authors:
TROFFER T
SCHADT M
FRANK T
ITOH H
PENSL G
HEINDL J
STRUNK HP
MAIER M
Citation: T. Troffer et al., DOPING OF SIC BY IMPLANTATION OF BORON AND ALUMINUM, Physica status solidi. a, Applied research, 162(1), 1997, pp. 277-298
Authors:
AFANASEV VV
BASSLER M
PENSL G
SCHULZ M
Citation: Vv. Afanasev et al., INTRINSIC SIC SIO2 INTERFACE STATES, Physica status solidi. a, Applied research, 162(1), 1997, pp. 321-337
Authors:
SCHMITT J
TROFFER T
CHRISTIANSEN K
SCHADT M
CHRISTIANSEN S
HELBIG R
PENSL G
STRUNK HP
Citation: J. Schmitt et al., CHARACTERIZATION OF HOMOEPITAXIAL SIC LAYERS, Journal of crystal growth, 175, 1997, pp. 528-531
Authors:
TROFFER T
PEPPERMULLER C
PENSL G
ROTTNER K
SCHONER A
Citation: T. Troffer et al., PHOSPHORUS-RELATED DONORS IN 6H-SIC GENERATED BY ION-IMPLANTATION, Journal of applied physics, 80(7), 1996, pp. 3739-3743
Authors:
AFANASEV VV
BASSLER M
PENSL G
SCHULZ MJ
VONKAMIENSKI ES
Citation: Vv. Afanasev et al., BAND OFFSETS AND ELECTRONIC-STRUCTURE OF SIC SIO2, INTERFACES/, Journal of applied physics, 79(6), 1996, pp. 3108-3114
Authors:
HEYDEMANN VD
SCHULZE N
BARRETT DL
PENSL G
Citation: Vd. Heydemann et al., GROWTH OF 6H AND 4H SILICON-CARBIDE SINGLE-CRYSTALS BY THE MODIFIED LELY PROCESS UTILIZING A DUAL-SEED CRYSTAL METHOD, Applied physics letters, 69(24), 1996, pp. 3728-3730
Authors:
KAUFMANN B
DORNEN A
HARLE V
BOLAY H
SCHOLZ F
PENSL G
Citation: B. Kaufmann et al., NEW NEAR-INFRARED DEFECT LUMINESCENCE IN GAN DOPED WITH VANADIUM BY ION-IMPLANTATION, Applied physics letters, 68(2), 1996, pp. 203-204
Authors:
AFANASEV VV
STESMANS A
BASSLER M
PENSL G
SCHULZ MJ
HARRIS CI
Citation: Vv. Afanasev et al., ELIMINATION OF SIC SIO2 INTERFACE STATES BY PREOXIDATION ULTRAVIOLET-AZONE CLEANING/, Applied physics letters, 68(15), 1996, pp. 2141-2143
Authors:
AFANASEV VV
BASSLER M
PENSL G
SCHULZ MJ
Citation: Vv. Afanasev et al., CHARGE TRAPPING AND INTERFACE STATE GENERATION IN 6H-SIC MOS STRUCTURES, Microelectronic engineering, 28(1-4), 1995, pp. 197-200
Authors:
GOTZ W
PENSL G
ZULEHNER W
ADDINALL R
NEWMAN RC
Citation: W. Gotz et al., ANNIHILATION STUDIES OF OXYGEN-RELATED (470-DEGREES-C) THERMAL DONOR CENTERS IN CZ-SI, Solid state communications, 93(5), 1995, pp. 454-455
Authors:
HASSLER C
DALIBOR T
PENSL G
ZULEHNER W
Citation: C. Hassler et al., HYDROGENATION OF LITHIUM-RELATED AND CALCIUM-RELATED DEFECT CENTERS IN SILICON, Solid state communications, 93(5), 1995, pp. 460-460