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Results: 1-25 | 26-40
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OPTICAL, STRUCTURAL AND ELECTRICAL-PROPERTIES OF DEVICE-QUALITY HYDROGENATED AMORPHOUS SILICON-NITROGEN FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: GIORGIS F GIULIANI F PIRRI CF TRESSO E SUMMONTE C RIZZOLI R GALLONI R DESALVO A RAVA P
Citation: F. Giorgis et al., OPTICAL, STRUCTURAL AND ELECTRICAL-PROPERTIES OF DEVICE-QUALITY HYDROGENATED AMORPHOUS SILICON-NITROGEN FILMS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Philosophical magazine. B. Physics of condensed matter.Statistical mechanics, electronic, optical and magnetic, 77(4), 1998, pp. 925-944
RADIATIVE RECOMBINATION PROCESSES AND DEFECTS IN A-C-H FILMS DEPOSITED BY PECVD
Authors: GIORGIS F GIULIANI F PIRRI CF TAGLIAFERRO A TRESSO E
Citation: F. Giorgis et al., RADIATIVE RECOMBINATION PROCESSES AND DEFECTS IN A-C-H FILMS DEPOSITED BY PECVD, DIAMOND AND RELATED MATERIALS, 7(2-5), 1998, pp. 435-439
DEFECT CHARACTERIZATION OF A-SIC-H AND A-SIN-H ALLOYS PRODUCED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN DIFFERENT PLASMA CONDITIONS
Authors: STAPINSKI T AMBROSONE G COSCIA U GIORGIS F PIRRI CF
Citation: T. Stapinski et al., DEFECT CHARACTERIZATION OF A-SIC-H AND A-SIN-H ALLOYS PRODUCED BY ULTRAHIGH-VACUUM PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION IN DIFFERENT PLASMA CONDITIONS, Physica. B, Condensed matter, 254(1-2), 1998, pp. 99-106
PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROPERTIES OF A-SI1-XNX-H BASED SUPERLATTICE STRUCTURES
Authors: SUMMONTE C RIZZOLI R GALLONI R GIORGIS F GIULIANI F PIRRI CF TRESSO E DESALVO A ZIGNANI F RAVA P
Citation: C. Summonte et al., PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROPERTIES OF A-SI1-XNX-H BASED SUPERLATTICE STRUCTURES, Journal of non-crystalline solids, 230, 1998, pp. 1127-1131
WIDE-BAND GAP A-SIC-H FILMS FOR OPTOELECTRONIC APPLICATIONS
Authors: GIORGIS F GIULIANI F PIRRI CF TRESSO E CONDE JP CHU V
Citation: F. Giorgis et al., WIDE-BAND GAP A-SIC-H FILMS FOR OPTOELECTRONIC APPLICATIONS, Journal of non-crystalline solids, 230, 1998, pp. 465-469
CORRELATION BETWEEN GAP DENSITY-OF-STATES AND RECOMBINATION PROCESSESIN HIGH ELECTRONIC QUALITY A-C-H
Authors: GIORGIS F GIULIANI F PIRRI CF TAGLIAFERRO A TRESSO E
Citation: F. Giorgis et al., CORRELATION BETWEEN GAP DENSITY-OF-STATES AND RECOMBINATION PROCESSESIN HIGH ELECTRONIC QUALITY A-C-H, Journal of non-crystalline solids, 230, 1998, pp. 565-569
PHOTOLUMINESCENCE AND ELECTRONIC DENSITY-OF-STATES IN A-C-H FILMS
Authors: GIORGIS F GIULIANI F PIRRI CF TAGLIAFERRO A TRESSO E
Citation: F. Giorgis et al., PHOTOLUMINESCENCE AND ELECTRONIC DENSITY-OF-STATES IN A-C-H FILMS, Applied physics letters, 72(20), 1998, pp. 2520-2522
DEMICHELIS,FRANCESCA - SPECIAL ISSUE
Authors: PIRRI CF GIORGIS F TAGLIAFERRO A TRESSO E
Citation: Cf. Pirri et al., DEMICHELIS,FRANCESCA - SPECIAL ISSUE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 76(3), 1997, pp. 247-247
CORRELATION BETWEEN THE OPTOELECTRONIC PROPERTIES AND THE STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON FILMS GROWN FROM A C2H2 GAS-SOURCE
Authors: GIORGIS F PIRRI CF TRESSO E RAVA P
Citation: F. Giorgis et al., CORRELATION BETWEEN THE OPTOELECTRONIC PROPERTIES AND THE STRUCTURE OF HYDROGENATED AMORPHOUS SILICON-CARBON FILMS GROWN FROM A C2H2 GAS-SOURCE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(4), 1997, pp. 471-483
THERMAL MODIFICATION OF WIDE-BANDGAP HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM C2H2+SIH4 MIXTURES
Authors: LIU YC GIORGIS F PIRRI CF
Citation: Yc. Liu et al., THERMAL MODIFICATION OF WIDE-BANDGAP HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM C2H2+SIH4 MIXTURES, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 75(4), 1997, pp. 485-496
A-SIC-H FILMS DEPOSITED BY PECVD FROM SILANE PLUS ACETYLENE AND SILANE PLUS ACETYLENE PLUS HYDROGEN GAS-MIXTURE
Authors: GIORGIS F PIRRI CF TRESSO E RAVA P
Citation: F. Giorgis et al., A-SIC-H FILMS DEPOSITED BY PECVD FROM SILANE PLUS ACETYLENE AND SILANE PLUS ACETYLENE PLUS HYDROGEN GAS-MIXTURE, DIAMOND AND RELATED MATERIALS, 6(11), 1997, pp. 1606-1611
WIDE-BAND GAP AMORPHOUS SILICON-BASED ALLOYS
Authors: GIORGIS F PIRRI CF TRESSO E RIGATO V ZANDOLIN S RAVA P
Citation: F. Giorgis et al., WIDE-BAND GAP AMORPHOUS SILICON-BASED ALLOYS, Physica. B, Condensed matter, 229(3-4), 1997, pp. 233-239
STRUCTURAL-PROPERTIES OF A-SI1-XNX-H FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION BY SIH4-2 GAS-MIXTURES(NH3+H)
Authors: GIORGIS F PIRRI CF TRESSO E
Citation: F. Giorgis et al., STRUCTURAL-PROPERTIES OF A-SI1-XNX-H FILMS GROWN BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION BY SIH4-2 GAS-MIXTURES(NH3+H), Thin solid films, 307(1-2), 1997, pp. 298-305
OPTOELECTRONIC PROPERTIES, STRUCTURE AND COMPOSITION OF A-SIC-H FILMSGROWN IN UNDILUTED AND H-2 DILUTED SILANE-METHANE PLASMA
Authors: DESALVO A GIORGIS F PIRRI CF TRESSO E RAVA P GALLONI R RIZZOLI R SUMMONTE C
Citation: A. Desalvo et al., OPTOELECTRONIC PROPERTIES, STRUCTURE AND COMPOSITION OF A-SIC-H FILMSGROWN IN UNDILUTED AND H-2 DILUTED SILANE-METHANE PLASMA, Journal of applied physics, 81(12), 1997, pp. 7973-7980
COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: DEMICHELIS F GIORGIS F PIRRI CF
Citation: F. Demichelis et al., COMPOSITIONAL AND STRUCTURAL-ANALYSIS OF HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS PREPARED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(2), 1996, pp. 155-168
LIGHT-INDUCED DEFECTS IN AMORPHOUS SILICON-CARBON ALLOYS A-SIC-H
Authors: REJEB SH GARBI R FATHALLAHA M DEMICHELIS F PIRRI CF TRESSO E CROVINI G
Citation: Sh. Rejeb et al., LIGHT-INDUCED DEFECTS IN AMORPHOUS SILICON-CARBON ALLOYS A-SIC-H, Optical materials, 6(1-2), 1996, pp. 13-16
THERMAL-STABILITY OF A-SI1-XCX-H FILMS GROWN BY PECVD WITH DIFFERENT GAS SOURCES
Authors: DEMICHELIS F GIORGIS F PIRRI CF TRESSO E
Citation: F. Demichelis et al., THERMAL-STABILITY OF A-SI1-XCX-H FILMS GROWN BY PECVD WITH DIFFERENT GAS SOURCES, Physica. B, Condensed matter, 225(1-2), 1996, pp. 103-110
EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E RIGATO V COSCIA U AMBROSONE G CATALANOTTI S RAVA P
Citation: F. Demichelis et al., EFFECTS OF POWER-DENSITY AND MOLECULE DWELL TIME ON COMPOSITIONAL ANDOPTOELECTRONIC PROPERTIES OF A-SIC - H ALLOYS, Solid state communications, 98(7), 1996, pp. 617-622
LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS)
Authors: FATHALLAH M GHARBI R CROVINI G DEMICHELIS F GIORGIS F PIRRI CF TRESSO E RAVA P
Citation: M. Fathallah et al., LIGHT-SOAKING IN A-SIC-H FILMS GROWN BY PECVD IN UNDILUTED AND HYDROGEN DILUTED SIH4-MIXTURES(CH4 GAS), Journal of non-crystalline solids, 200, 1996, pp. 490-494
COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION
Authors: GIORGIS F RAVA P GALLONI R RIZZOLI R SUMMONTE C CROVINI G DEMICHELIS F PIRRI CF TRESSO E RIGATO V
Citation: F. Giorgis et al., COMPOSITIONAL, OPTOELECTRONIC AND STRUCTURAL-PROPERTIES OF AMORPHOUS SILICON-NITROGEN ALLOYS DEPOSITED BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION, Journal of non-crystalline solids, 200, 1996, pp. 596-600
CHARACTERIZATION OF THE EFFECT OF GROWTH-CONDITIONS ON A-SIC-H FILMS
Authors: RAVA P CROVINI G DEMICHELIS F GIORGIS F PIRRI CF
Citation: P. Rava et al., CHARACTERIZATION OF THE EFFECT OF GROWTH-CONDITIONS ON A-SIC-H FILMS, Journal of applied physics, 80(7), 1996, pp. 4116-4123
HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS, A-SINX-H-Y - A WIDE-BAND GAP MATERIAL FOR OPTOELECTRONIC DEVICES
Authors: DEMICHELIS F CROVINI G GIORGIS F PIRRI CF TRESSO E
Citation: F. Demichelis et al., HYDROGENATED AMORPHOUS SILICON-NITROGEN ALLOYS, A-SINX-H-Y - A WIDE-BAND GAP MATERIAL FOR OPTOELECTRONIC DEVICES, Journal of applied physics, 79(3), 1996, pp. 1730-1735
BONDING STRUCTURE AND DEFECTS IN WIDE-BAND GAP A-SI1-XCX-H FILMS DEPOSITED IN H-2 DILUTED SIH4-MIXTURES(CH4 GAS)
Authors: DEMICHELIS F GIORGIS F PIRRI CF TRESSO E
Citation: F. Demichelis et al., BONDING STRUCTURE AND DEFECTS IN WIDE-BAND GAP A-SI1-XCX-H FILMS DEPOSITED IN H-2 DILUTED SIH4-MIXTURES(CH4 GAS), Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 71(5), 1995, pp. 1015-1033
OPTIMIZATION OF RELEVANT DEPOSITION PARAMETERS FOR HIGH-QUALITY A-SIC-H FILMS
Authors: DEMICHELIS F CROVINI G PIRRI CF TRESSO E GALLONI R RIZZOLI R SUMMONTE C RAVA P
Citation: F. Demichelis et al., OPTIMIZATION OF RELEVANT DEPOSITION PARAMETERS FOR HIGH-QUALITY A-SIC-H FILMS, Solar energy materials and solar cells, 37(3-4), 1995, pp. 315-321
STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF CARBON-RICH HYDROGENATED AMORPHOUS SILICON-CARBON FILMS
Authors: DEMICHELIS F GIORGIS F PIRRI CF TRESSO E DELLAMEA G RIGATO V ZANDOLIN S
Citation: F. Demichelis et al., STRUCTURAL AND OPTOELECTRONIC PROPERTIES OF CARBON-RICH HYDROGENATED AMORPHOUS SILICON-CARBON FILMS, DIAMOND AND RELATED MATERIALS, 4(4), 1995, pp. 357-360
Risultati: 1-25 | 26-40