AAAAAA
Results:
1-8
|
Results: 8
Authors:
PLYATSKO SV
Citation: Sv. Plyatsko, GROWTH-CHARACTERISTICS AND PHYSICAL-PROPERTIES OF PBTE BAF2 PREPARED UNDER NONEQUILIBRIUM CONDITIONS/, Semiconductors, 32(3), 1998, pp. 231-234
Authors:
KLADKO VP
PLYATSKO SV
Citation: Vp. Kladko et Sv. Plyatsko, ON THE EFFECT OF A DOPANT ON THE FORMATION OF DISORDERED REGIONS IN GAAS UNDER IRRADIATION WITH FAST-NEUTRONS, Semiconductors, 32(3), 1998, pp. 235-237
Authors:
PLYATSKO SV
Citation: Sv. Plyatsko, LASER-MODULATED EPITAXY OF LEAD-TELLURIDE, Semiconductors, 32(3), 1998, pp. 270-273
Authors:
PLYATSKO SV
Citation: Sv. Plyatsko, INTRINSIC DEFECT STATES IN PBTE SINGLE-CRYSTAL FILMS GROWN BY LASER-MODULATED EPITAXY, Semiconductors, 32(1), 1998, pp. 40-42
Authors:
SIZOV FF
KLADKO VP
PLYATSKO SV
SHEVLYAKOV AP
KOZYREV YN
OGENKO VM
Citation: Ff. Sizov et al., SI SI1-XGEX EPITAXIAL LAYERS AND SUPERLATTICES - GROWTH AND STRUCTURAL CHARACTERISTICS/, Semiconductors, 31(8), 1997, pp. 786-788
Authors:
PLYATSKO SV
KLADKO VP
Citation: Sv. Plyatsko et Vp. Kladko, EFFECT OF INFRARED-LASER RADIATION ON THE STRUCTURE AND ELECTROPHYSICAL PROPERTIES OF UNDOPED SINGLE-CRYSTAL INAS, Semiconductors, 31(10), 1997, pp. 1037-1040
Authors:
KLADKO VP
PLYATSKO SV
Citation: Vp. Kladko et Sv. Plyatsko, TRANSFORMATION IN THE GAAS POINT-DEFECT S YSTEM CAUSED BY THE EFFECT OF INFRARED-LASER EMISSION, Pis'ma v Zurnal tehniceskoj fiziki, 22(2), 1996, pp. 32-36
Authors:
PLYATSKO SV
GROMOVOI YS
KADYSHEV SK
KLIMOV AA
Citation: Sv. Plyatsko et al., CONVERSION OF INTRINSIC AND EXTRINSIC DEFECTS BY LASER-LIGHT IN LEAD SELENIDE AND ITS SOLID-SOLUTIONS, Semiconductors, 28(1), 1994, pp. 83-86
Risultati:
1-8
|