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Results:
1-16
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Results: 16
Authors:
LAPTEV AN
PROKAZNIKOV AV
RUD NA
Citation: An. Laptev et al., HYSTERESIS OF THE CURRENT-VOLTAGE CHARACTERISTICS OF POROUS-SILICON LIGHT-EMITTING STRUCTURES, Technical physics letters, 23(6), 1997, pp. 440-442
Authors:
BUCHIN EY
LAPTEV NA
PROKAZNIKOV AV
RUD NA
SVETOVOI VB
CHIRKOV AN
Citation: Ey. Buchin et al., ELECTROLUMINESCENCE AND CURRENT-VOLTAGE CHARACTERISTICS OF N-TYPE POROUS SILICON STRUCTURES, Technical physics letters, 23(6), 1997, pp. 445-447
Authors:
BUCHIN EY
PROKAZNIKOV AV
Citation: Ey. Buchin et Av. Prokaznikov, DYNAMICS OF AN ELECTROLYTE-N-TYPE SILICON SYSTEM DURING ANODIZATION IN HYDROFLUORIC-ACID SOLUTIONS, Technical physics letters, 23(3), 1997, pp. 169-171
Authors:
BUCHIN EY
PROKAZNIKOV AV
Citation: Ey. Buchin et Av. Prokaznikov, CONTROL OF THE MORPHOLOGY OF N-TYPE POROUS SILICON, Technical physics letters, 23(3), 1997, pp. 244-245
Authors:
PROKAZNIKOV AV
BUCHIN EY
Citation: Av. Prokaznikov et Ey. Buchin, CONTROLLABLE FORMATION OF POROUS STRUCTURES ON N-TYPE SILICON, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 47-52
Authors:
PROKAZNIKOV AV
BUCHIN EY
Citation: Av. Prokaznikov et Ey. Buchin, CHARACTER OF DYNAMICS IN THE ELECTROLYTE N-TYPE SILICON SYSTEM DURINGANODIZATION IN HF SOLUTIONS, PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 5-6, 1997, pp. 117-122
Authors:
ZIMIN SP
KUZNETSOV VS
PROKAZNIKOV AV
Citation: Sp. Zimin et al., CHANGE OF LIGHT HOLES VALENCE-BAND IN LEAD-TIN TELLURIDE FILMS BY ISOVALENT SUBSTITUTION OF CHALCOGEN ATOMS, Thin solid films, 310(1-2), 1997, pp. 194-198
Authors:
BABANOV YE
PROKAZNIKOV AV
RUD NA
SVETOVOY VB
Citation: Ye. Babanov et al., BRIGHT ELECTROLUMINESCENCE FROM PLANAR STRUCTURES ON POROUS SILICON, Physica status solidi. a, Applied research, 162(2), 1997, pp. 7-8
Authors:
BABANOV YE
BUCHIN EY
PROKAZNIKOV AV
SVETOVOY VB
Citation: Ye. Babanov et al., DIFFERENT LOCATION OF PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN N-TYPE POROUS SILICON, Physica status solidi. a, Applied research, 161(1), 1997, pp. 1-2
Authors:
KUZNETSOV VS
PROKAZNIKOV AV
Citation: Vs. Kuznetsov et Av. Prokaznikov, MODES OF PORE-FORMING RELATED TO CURRENT INSTABILITIES, Pis'ma v Zurnal tehniceskoj fiziki, 22(10), 1996, pp. 35-39
Authors:
BUCHIN EY
CHURILOV AB
PROKAZNIKOV AV
Citation: Ey. Buchin et al., DIFFERENT MORPHOLOGY ASPECTS OF N-TYPE POROUS SILICON, Applied surface science, 102, 1996, pp. 431-435
Authors:
BUCHIN EY
POSTNIKOV AV
PROKAZNIKOV AV
SVETOVOI VB
CHURILOV AB
Citation: Ey. Buchin et al., EFFECT OF TREATMENT MODES ON MORPHOLOGY A ND OPTICAL-PROPERTIES OF N-TYPE POROUS SILICON, Pis'ma v Zurnal tehniceskoj fiziki, 21(1), 1995, pp. 60-65
Authors:
ZIMIN SP
KUZNETSOV VS
PROKAZNIKOV AV
Citation: Sp. Zimin et al., ELECTRICAL CHARACTERISTICS OF ALUMINUM CONTACTS TO POROUS SILICON, Applied surface science, 91(1-4), 1995, pp. 355-358
Authors:
ZIMIN SP
KUZNETSOV VS
PERCH NV
PROKAZNIKOV AV
Citation: Sp. Zimin et al., MECHANISM OF CURRENT TUNNELING IN POROUS SILICON STRUCTURES, Pis'ma v Zurnal tehniceskoj fiziki, 20(22), 1994, pp. 22-26
Authors:
PROKAZNIKOV AV
MASLYENITSYN SF
SVYATCHENKO AA
PAVLOV ST
Citation: Av. Prokaznikov et al., SELF-ORGANIZATION PHENOMENA DURING POROUS SILICON FORMATION, Solid state communications, 90(4), 1994, pp. 217-221
Authors:
VINKE AL
KURBATOV DA
MOKROUSOV NE
PROKAZNIKOV AV
Citation: Al. Vinke et al., TRANSIENT PROCESSES DURING PORE FORMATION IN N-TYPE SILICON, Russian electrochemistry, 29(8), 1993, pp. 1172-1176
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1-16
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