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Results: 1-24 |
Results: 24
Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN
Authors: Goldys, EM Godlewski, M Paskova, T Pozina, G Monemar, B
Citation: Em. Goldys et al., Characterization of red emission in nominally undoped hydride vapor phase epitaxy GaN, MRS I J N S, 6(1), 2001, pp. 1-6
Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
Authors: Valcheva, E Paskova, T Abrashev, MV Persson, PAO Paskov, PP Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN, MAT SCI E B, 82(1-3), 2001, pp. 35-38
Optical characterization of InGaN/GaN MQW structures without in phase separation
Authors: Monemar, B Paskov, PP Pozina, G Paskova, T Bergman, JP Iwaya, M Nitta, S Amano, H Akasaki, I
Citation: B. Monemar et al., Optical characterization of InGaN/GaN MQW structures without in phase separation, PHYS ST S-B, 228(1), 2001, pp. 157-160
Spin-exchange splitting of excitons in GaN - art. no. 115201
Authors: Paskov, PP Paskova, T Holtz, PO Monemar, B
Citation: Pp. Paskov et al., Spin-exchange splitting of excitons in GaN - art. no. 115201, PHYS REV B, 6411(11), 2001, pp. 5201
Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213
Authors: Arnaudov, B Paskova, T Goldys, EM Evtimova, S Monemar, B
Citation: B. Arnaudov et al., Modeling of the free-electron recombination band in emission spectra of highly conducting n-GaN - art. no. 045213, PHYS REV B, 6404(4), 2001, pp. 5213
Defect reduction in HVPE growth of GaN and related optical spectra
Authors: Paskova, T Paskov, PP Darakchieva, V Tungasmita, S Birch, J Monemar, B
Citation: T. Paskova et al., Defect reduction in HVPE growth of GaN and related optical spectra, PHYS ST S-A, 183(1), 2001, pp. 197-203
Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers
Authors: Ratnikov, VV Kyutt, RN Shubina, TV Paskova, T Monemar, B
Citation: Vv. Ratnikov et al., Determination of microdistortion components and their application to structural characterization of HVBE GaN epitaxial layers, J PHYS D, 34(10A), 2001, pp. A30-A34
Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Paskov, PP Evtimova, S Abrashev, M Monemar, B
Citation: T. Paskova et al., Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer, J CRYST GR, 230(3-4), 2001, pp. 381-386
Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
Authors: Valcheva, E Paskova, T Abrashev, MV Paskov, PP Persson, POA Goldys, EM Beccard, R Heuken, M Monemar, B
Citation: E. Valcheva et al., Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates, J APPL PHYS, 90(12), 2001, pp. 6011-6016
Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition
Authors: Pozina, G Edwards, NV Bergman, JP Paskova, T Monemar, B Bremser, MD Davis, RF
Citation: G. Pozina et al., Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition, APPL PHYS L, 78(8), 2001, pp. 1062-1064
Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN
Authors: Paskova, T Goldys, EM Paskov, PP Wahab, Q Wilzen, L de Jong, MP Monemar, B
Citation: T. Paskova et al., Mass transport growth and optical emission properties of hydride vapor phase epitaxy GaN, APPL PHYS L, 78(26), 2001, pp. 4130-4132
Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'
Authors: Paskova, T Tungasmita, S Valcheva, E Svedberg, EB Arnaudov, B Evtimova, S Persson, PA Henry, A Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates', MRS I J N S, 5, 2000, pp. NIL_117-NIL_123
Influence of growth rate on the structure of thick GaN layers grown by HVPE
Authors: Paskova, T Goldys, EM Yakimova, R Svedberg, EB Henry, A Monemar, B
Citation: T. Paskova et al., Influence of growth rate on the structure of thick GaN layers grown by HVPE, J CRYST GR, 208(1-4), 2000, pp. 18-26
Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
Authors: Ratnikov, V Kyutt, R Shubina, T Paskova, T Valcheva, E Monemar, B
Citation: V. Ratnikov et al., Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films, J APPL PHYS, 88(11), 2000, pp. 6252-6259
Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers
Authors: Paskova, T Valcheva, E Birch, J Tungasmita, S Persson, POA Beccard, R Heuken, M Monemar, B
Citation: T. Paskova et al., Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers, J APPL PHYS, 88(10), 2000, pp. 5729-5732
Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer
Authors: Valcheva, E Paskova, T Tungasmita, S Persson, POA Birch, J Svedberg, EB Hultman, L Monemar, B
Citation: E. Valcheva et al., Interface structure of hydride vapor phase epitaxial GaN grown with high-temperature reactively sputtered AlN buffer, APPL PHYS L, 76(14), 2000, pp. 1860-1862
B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing
Authors: Valcheva, E Paskova, T Ivanov, IG Yakimova, R Wahab, Q Savage, S Nordell, N Harris, CI
Citation: E. Valcheva et al., B implantation in 6H-SiC: Lattice damage recovery and implant activation upon high-temperature annealing, J VAC SCI B, 17(3), 1999, pp. 1040-1044
Dynamics of the bound excitons in GaN epilayers grown by hydride vapor phase epitaxy
Authors: Pozina, G Bergman, JP Paskova, T Monemar, B
Citation: G. Pozina et al., Dynamics of the bound excitons in GaN epilayers grown by hydride vapor phase epitaxy, PHYS ST S-B, 216(1), 1999, pp. 45-49
Thick GaN layers grown on A-plane sapphire substrates by hydride vapour phase epitaxy
Authors: Paskova, T Svedberg, EB Henry, A Ivanov, IG Yakimova, R Monemar, B
Citation: T. Paskova et al., Thick GaN layers grown on A-plane sapphire substrates by hydride vapour phase epitaxy, PHYS SCR, T79, 1999, pp. 67-71
Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers
Authors: Paskova, T Birch, J Tungasmita, S Beccard, R Heuken, M Svedberg, EB Runesson, P Goldys, EM Monemar, B
Citation: T. Paskova et al., Thick hydride vapour phase epitaxial GaN layers grown on sapphire with different buffers, PHYS ST S-A, 176(1), 1999, pp. 415-419
Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films
Authors: Paskova, T Goldys, EM Monemar, B
Citation: T. Paskova et al., Hydride vapour-phase epitaxy growth and cathodoluminescence characterisation of thick GaN films, J CRYST GR, 203(1-2), 1999, pp. 1-11
Contribution of free-electron recombination to the luminescence spectra ofthick GaN films grown by hydride vapor phase epitaxy
Authors: Arnaudov, B Paskova, T Goldys, EM Yakimova, R Evtimova, S Ivanov, IG Henry, A Monemar, B
Citation: B. Arnaudov et al., Contribution of free-electron recombination to the luminescence spectra ofthick GaN films grown by hydride vapor phase epitaxy, J APPL PHYS, 85(11), 1999, pp. 7888-7892
Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
Authors: Pozina, G Bergman, JP Paskova, T Monemar, B
Citation: G. Pozina et al., Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy, APPL PHYS L, 75(26), 1999, pp. 4124-4126
Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence
Authors: Goldys, EM Paskova, T Ivanov, IG Arnaudov, B Monemar, B
Citation: Em. Goldys et al., Direct observation of large-scale nonuniformities in hydride vapor-phase epitaxy-grown gallium nitride by cathodoluminescence, APPL PHYS L, 73(24), 1998, pp. 3583-3585
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