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Results: 1-25/31
Authors:
Alekseev, E
Pavlidis, D
Sutton, WE
Piner, E
Redwing, J
Citation: E. Alekseev et al., GaN-based Gunn diodes: Their frequency and power performance and experimental considerations, IEICE TR EL, E84C(10), 2001, pp. 1462-1469
Authors:
Buttari, D
Chini, A
Meneghesso, G
Zanoni, E
Sawdai, D
Pavlidis, D
Hsu, SSH
Citation: D. Buttari et al., Measurements of the InGaAs hole impact ionization coefficient in InAlAs/InGaAs pnp HBTs, IEEE ELEC D, 22(5), 2001, pp. 197-199
Authors:
Park, JW
Pavlidis, D
Mohammadi, S
Guyaux, JL
Garcia, JC
Citation: Jw. Park et al., Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors, IEEE DEVICE, 48(7), 2001, pp. 1297-1303
Authors:
Panda, AK
Pavlidis, D
Alekseev, EA
Citation: Ak. Panda et al., Noise characteristics of GaN-Based IMPATTs, IEEE DEVICE, 48(7), 2001, pp. 1473-1475
Authors:
Panda, AK
Pavlidis, D
Alekseev, E
Citation: Ak. Panda et al., DC and high-frequency characteristics of GaN-based IMPATTs, IEEE DEVICE, 48(4), 2001, pp. 820-823
Authors:
Tiginyanu, IM
Kravetsky, IV
Pavlidis, D
Eisenbach, A
Hildebrandt, R
Marowsky, G
Hartnagel, HL
Citation: Im. Tiginyanu et al., Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire, MRS I J N S, 5, 2000, pp. NIL_661-NIL_666
Authors:
Alekseev, E
Pavlidis, D
Citation: E. Alekseev et D. Pavlidis, Large-signal microwave performance of GaN-based NDR diode oscillators, SOL ST ELEC, 44(6), 2000, pp. 941-947
Authors:
Mohammadi, S
Hubbard, SM
Chelli, C
Pavlidis, D
Bayraktaroglu, B
Citation: S. Mohammadi et al., Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs, SOL ST ELEC, 44(4), 2000, pp. 739-746
Authors:
Alekseev, E
Pavlidis, D
Citation: E. Alekseev et D. Pavlidis, DC and high-frequency performance of AlGaN/GaN Heterojunction Bipolar Transistors, SOL ST ELEC, 44(2), 2000, pp. 245-252
Authors:
Park, JW
Mohammadi, S
Pavlidis, D
Dua, C
Guyaux, JL
Garcia, JC
Citation: Jw. Park et al., Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology, SOL ST ELEC, 44(11), 2000, pp. 2059-2067
Authors:
Park, JW
Mohammadi, S
Pavlidis, D
Citation: Jw. Park et al., Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics, SOL ST ELEC, 44(10), 2000, pp. 1847-1852
Authors:
Hashizume, T
Alekseev, E
Pavlidis, D
Boutros, KS
Redwing, J
Citation: T. Hashizume et al., Capacitance-voltage characterization of AlN/GaN metal-insulator-semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition, J APPL PHYS, 88(4), 2000, pp. 1983-1986
Authors:
Mohammadi, S
Park, JW
Pavlidis, D
Guyaux, JL
Garcia, JC
Citation: S. Mohammadi et al., Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication, IEEE MICR T, 48(6), 2000, pp. 1038-1044
Authors:
Alekseev, E
Pavlidis, D
Nguyen, NX
Nguyen, C
Grider, DE
Citation: E. Alekseev et al., Power performance and scalability of AlGaN/GaN power MODFETs, IEEE MICR T, 48(10), 2000, pp. 1694-1700
Authors:
Mohammadi, S
Pavlidis, D
Bayraktaroglu, B
Citation: S. Mohammadi et al., Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBT's, IEEE DEVICE, 47(4), 2000, pp. 677-686
Authors:
Mohammadi, S
Pavlidis, D
Citation: S. Mohammadi et D. Pavlidis, A nonfundamental theory of low-frequency noise in semiconductor devices, IEEE DEVICE, 47(11), 2000, pp. 2009-2017
Authors:
Alekseev, E
Pavlidis, D
Citation: E. Alekseev et D. Pavlidis, Microwave potential of GaN-based Gunn devices, ELECTR LETT, 36(2), 2000, pp. 176-178
Authors:
Kravetsky, IV
Tiginyanu, IM
Hildebrandt, R
Marowsky, G
Pavlidis, D
Eisenbach, A
Hartnagel, HL
Citation: Iv. Kravetsky et al., Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference, APPL PHYS L, 76(7), 2000, pp. 810-812
Authors:
Kravetsky, IV
Tiginyanu, IM
Hildebrandt, R
Marowsky, G
Pavlidis, D
Eisenbach, A
Hartnagel, HL
Citation: Iv. Kravetsky et al., Nonlinear optical response of GaN layers on sapphire: The impact of fundamental beam interference (vol 76, pg 810, 2000), APPL PHYS L, 76(11), 2000, pp. 1479-1479
Authors:
Krawczyk, S
Bejar, M
Khoukh, A
Blanchet, R
Sermage, B
Cui, D
Pavlidis, D
Citation: S. Krawczyk et al., New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials, JPN J A P 1, 38(2B), 1999, pp. 992-995
Authors:
Ziegler, V
Berg, M
Tobler, H
Woelk, C
Deufel, R
Trasser, A
Schumacher, H
Alekseev, E
Pavlidis, D
Dickmann, J
Citation: V. Ziegler et al., Low-power consumption InGaAs PIN diode switches for V-band applications, JPN J A P 1, 38(2B), 1999, pp. 1208-1210
Authors:
Morkoc, H
Cingolani, R
Lambrecht, W
Gil, B
Pavlidis, D
Jiang, HX
Lin, J
Citation: H. Morkoc et al., Spontaneous polarization and piezoelectric field in nitride semiconductor heterostructures, J KOR PHYS, 34, 1999, pp. S224-S233
Authors:
Pavlidis, D
Ishibashi, T
Mizutani, T
Bayraktaroglu, B
Citation: D. Pavlidis et al., Special Issue - Proceedings of the Topical Workshop on Heterostructure Microelectronics - Shonan Village Center, Hayama-Machi, Kanagawa, Japan - 30thAugust-2nd September, 1998 - Preface to special issue, SOL ST ELEC, 43(8), 1999, pp. 1321-1321
Authors:
Hsu, SSH
Bayraktaroglu, B
Pavlidis, D
Citation: Ssh. Hsu et al., Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications, SOL ST ELEC, 43(8), 1999, pp. 1429-1436
Authors:
Sawdai, D
Pavlidis, D
Citation: D. Sawdai et D. Pavlidis, InP-based complementary HBT amplifiers for use in communication systems, SOL ST ELEC, 43(8), 1999, pp. 1507-1512