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Results: 1-25 | 26-50 | 51-75 | 76-100 | >>
Results: 51-75/201
Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage
Authors: Zhang, AP Johnson, JW Ren, F Han, J Polyakov, AY Smirnov, NB Govorkov, AV Redwing, JM Lee, KP Pearton, SJ
Citation: Ap. Zhang et al., Lateral AlxGa1-xN power rectifiers with 9.7 kV reverse breakdown voltage, APPL PHYS L, 78(6), 2001, pp. 823-825
Magnetic and structural properties of Mn-implanted GaN
Authors: Theodoropoulou, N Hebard, AF Overberg, ME Abernathy, CR Pearton, SJ Chu, SNG Wilson, RG
Citation: N. Theodoropoulou et al., Magnetic and structural properties of Mn-implanted GaN, APPL PHYS L, 78(22), 2001, pp. 3475-3477
Common-base operation of GaN bipolar junction transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Abernathy, CR Pearton, SJ Van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ Chu, SNG
Citation: Xa. Cao et al., Common-base operation of GaN bipolar junction transistors, EL SOLID ST, 3(7), 2000, pp. 333-334
High current, common-base GaN/AlGaN heterojunction bipolar transistors
Authors: Cao, XA Dang, GT Zhang, AP Ren, F Van Hove, JM Klaassen, JJ Polley, CJ Wowchak, AM Chow, PP King, DJ Abernathy, CR Pearton, SJ
Citation: Xa. Cao et al., High current, common-base GaN/AlGaN heterojunction bipolar transistors, EL SOLID ST, 3(3), 2000, pp. 144-146
Defect trapping and annealing for transition metal implants in group III nitrides
Authors: Lorenz, K Vianden, R Pearton, SJ Abernathy, CR Zavada, JM
Citation: K. Lorenz et al., Defect trapping and annealing for transition metal implants in group III nitrides, MRS I J N S, 5(5), 2000, pp. 1-7
A review of dry etching of GaN and related materials
Authors: Pearton, SJ Shul, RJ Ren, F
Citation: Sj. Pearton et al., A review of dry etching of GaN and related materials, MRS I J N S, 5(11), 2000, pp. 1-38
Properties and effects of hydrogen in GaN
Authors: Pearton, SJ Cho, H Ren, F Chyi, JI Han, J Wilson, RG
Citation: Sj. Pearton et al., Properties and effects of hydrogen in GaN, MRS I J N S, 5, 2000, pp. NIL_465-NIL_474
Surface conversion effects in plasma-damaged p-GaN
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: Xa. Cao et al., Surface conversion effects in plasma-damaged p-GaN, MRS I J N S, 5, 2000, pp. NIL_481-NIL_490
Photoluminescence enhancement and morphological properties of carbon codoped GaN : Er
Authors: Overberg, ME Abernathy, CR Pearton, SJ Wilson, RG Zavada, JM
Citation: Me. Overberg et al., Photoluminescence enhancement and morphological properties of carbon codoped GaN : Er, MRS I J N S, 5, 2000, pp. NIL_697-NIL_702
High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., High density plasma damage induced in n-GaN Schottky diodes using Cl-2/Ar discharges, MRS I J N S, 5, 2000, pp. NIL_715-NIL_720
Processing and device performance of GaN power rectifiers
Authors: Zhang, AP Dang, GT Cao, XA Cho, H Ren, F Han, J Chyi, JI Lee, CM Nee, TE Chuo, CC Chi, GC Chu, SNG Wilson, RG Pearton, SJ
Citation: Ap. Zhang et al., Processing and device performance of GaN power rectifiers, MRS I J N S, 5, 2000, pp. NIL_721-NIL_726
Comparison of implant isolation species for GaN field-effect transistor structures
Authors: Dang, G Cao, XA Ren, F Pearton, SJ Han, J Baca, AG Shul, RJ Wilson, RG
Citation: G. Dang et al., Comparison of implant isolation species for GaN field-effect transistor structures, MRS I J N S, 5, 2000, pp. NIL_727-NIL_732
Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers
Authors: Polyakov, AY Smirnov, NB Govorkov, AV Dang, G Zhang, AP Ren, F Cao, XA Pearton, SJ Wilson, RG
Citation: Ay. Polyakov et al., Electrical properties and defect states in undoped high-resistivity GaN films used in high-power rectifiers, J VAC SCI B, 18(3), 2000, pp. 1237-1243
Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques
Authors: Park, YD Jung, KB Overberg, M Temple, D Pearton, SJ Holloway, PH
Citation: Yd. Park et al., Comparative study of Ni nanowires patterned by electron-beam lithography and fabricated by lift-off and dry etching techniques, J VAC SCI B, 18(1), 2000, pp. 16-20
Thermal stability and etching characteristics of electron beam deposited SiO and SiO2
Authors: LaRoche, JR Ren, F Lothian, R Hong, J Pearton, SJ Lambers, E Hsu, CH Wu, CS Hoppe, M
Citation: Jr. Laroche et al., Thermal stability and etching characteristics of electron beam deposited SiO and SiO2, J VAC SCI B, 18(1), 2000, pp. 283-287
Ultraviolet light enhancement of Ta2O5 dry etch rates
Authors: Lee, KP Cho, H Singh, RK Pearton, SJ Hobbs, C Tobin, P
Citation: Kp. Lee et al., Ultraviolet light enhancement of Ta2O5 dry etch rates, J VAC SCI B, 18(1), 2000, pp. 293-295
Advanced processing of GaN for electronic devices
Authors: Cao, XA Pearton, SJ Ren, F
Citation: Xa. Cao et al., Advanced processing of GaN for electronic devices, CR R SOLID, 25(4), 2000, pp. 279-390
GaN electronics
Authors: Pearton, SJ Ren, F
Citation: Sj. Pearton et F. Ren, GaN electronics, ADVAN MATER, 12(21), 2000, pp. 1571
Fabrication and performance of GaN electronic devices
Authors: Pearton, SJ Ren, F Zhang, AP Lee, KP
Citation: Sj. Pearton et al., Fabrication and performance of GaN electronic devices, MAT SCI E R, 30(3-6), 2000, pp. 55-212
Luminescence characteristics of Er-doped GaN semiconductor thin films
Authors: Zavada, JM Thaik, M Hommerich, U MacKenzie, JD Abernathy, CR Pearton, SJ Wilson, RG
Citation: Jm. Zavada et al., Luminescence characteristics of Er-doped GaN semiconductor thin films, J ALLOY COM, 300, 2000, pp. 207-213
Cl-2-based dry etching of GaN films under inductively coupled plasma conditions
Authors: Im, YH Park, JS Hahn, YB Nahm, KS Lee, YS Cho, BC Lim, KY Lee, HJ Pearton, SJ
Citation: Yh. Im et al., Cl-2-based dry etching of GaN films under inductively coupled plasma conditions, J VAC SCI A, 18(5), 2000, pp. 2169-2174
High breakdown voltage Au/Pt/GaN Schottky diodes
Authors: Dang, GT Zhang, AP Mshewa, MM Ren, F Chyi, JI Lee, CM Chuo, CC Chi, GC Han, J Chu, SNG Wilson, RG Cao, XA Pearton, SJ
Citation: Gt. Dang et al., High breakdown voltage Au/Pt/GaN Schottky diodes, J VAC SCI A, 18(4), 2000, pp. 1135-1138
Inductively coupled plasma-induced etch damage of GaN p-n junctions
Authors: Shul, RJ Zhang, L Baca, AG Willison, CG Han, J Pearton, SJ Ren, F
Citation: Rj. Shul et al., Inductively coupled plasma-induced etch damage of GaN p-n junctions, J VAC SCI A, 18(4), 2000, pp. 1139-1143
Schottky diode measurements of dry etch damage in n- and p-type GaN
Authors: Cao, XA Zhang, AP Dang, GT Ren, F Pearton, SJ Shul, RJ Zhang, L
Citation: Xa. Cao et al., Schottky diode measurements of dry etch damage in n- and p-type GaN, J VAC SCI A, 18(4), 2000, pp. 1144-1148
Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma
Authors: Zhang, AP Dang, GT Ren, F Van Hove, JM Klaassen, JJ Chow, PP Cao, XA Pearton, SJ
Citation: Ap. Zhang et al., Effect of N-2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma, J VAC SCI A, 18(4), 2000, pp. 1149-1152
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