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Results: << | 101-125 | 126-150 | 151-175 | 176-200 | >>
Results: 101-125/201
GaNPN junction issues and developments
Authors: Hickman, R Van Hove, JM Chow, PP Klaassen, JJ Wowchak, AM Polley, CJ King, DJ Ren, F Abernathy, CR Pearton, SJ Jung, KB Cho, H La Roche, JR
Citation: R. Hickman et al., GaNPN junction issues and developments, SOL ST ELEC, 44(2), 2000, pp. 377-381
npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
Authors: Dang, G Luo, B Zhang, AP Cao, XA Ren, F Pearton, SJ Cho, H Hobson, WS Lopata, J van Hove, JM Klaassen, JJ Polley, CJ Wowchack, AM Chow, PP King, DJ
Citation: G. Dang et al., npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions, SOL ST ELEC, 44(12), 2000, pp. 2097-2100
The effect of N-2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics
Authors: Trivedi, VP Hsu, CH Luo, B Cao, X LoRache, JR Ren, F Pearton, SJ Abernathy, CR Lambers, E Hoppe, M Wu, CS Sasserath, J Lee, JW Mackenzie, K
Citation: Vp. Trivedi et al., The effect of N-2 plasma damage on AlGaAs/InGaAs/GaAs high electron mobility transistors. I. DC characteristics, SOL ST ELEC, 44(12), 2000, pp. 2101-2108
Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors
Authors: LaRoche, JR Ren, F Temple, D Pearton, SJ Kuo, JM Baca, AG Cheng, P Park, YD Hudspeth, Q Hebard, AF Arnason, SB
Citation: Jr. Laroche et al., Processing techniques for InGaAs/InAlAs/InGaAs spin field effect transistors, SOL ST ELEC, 44(12), 2000, pp. 2117-2122
Contact resistivity and transport mechanisms in W contacts to p- and n-GaN
Authors: Zeitouny, A Eizenberg, M Pearton, SJ Ren, F
Citation: A. Zeitouny et al., Contact resistivity and transport mechanisms in W contacts to p- and n-GaN, J APPL PHYS, 88(4), 2000, pp. 2048-2053
Corrosion-free dry etch patterning of magnetic random access memory stacks: Effects of ultraviolet illumination
Authors: Cho, H Lee, KP Jung, KB Pearton, SJ Marburger, J Sharifi, F Hahn, YB Childress, JR
Citation: H. Cho et al., Corrosion-free dry etch patterning of magnetic random access memory stacks: Effects of ultraviolet illumination, J APPL PHYS, 87(9), 2000, pp. 6397-6399
Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Wilson, RG Van Hove, JM
Citation: Xa. Cao et al., Creation of high resistivity GaN by implantation of Ti, O, Fe, or Cr, J APPL PHYS, 87(3), 2000, pp. 1091-1095
GaNN- and P-type Schottky diodes: Effect of dry etch damage
Authors: Cao, XA Pearton, SJ Dang, GT Zhang, AP Ren, F Van Hove, JM
Citation: Xa. Cao et al., GaNN- and P-type Schottky diodes: Effect of dry etch damage, IEEE DEVICE, 47(7), 2000, pp. 1320-1324
High voltage GaN Schottky rectifiers
Authors: Dang, GT Zhang, AP Ren, F Cao, XNA Pearton, SJ Cho, H Han, J Chyi, JI Lee, CM Chuo, CC Chu, SNG Wilson, RG
Citation: Gt. Dang et al., High voltage GaN Schottky rectifiers, IEEE DEVICE, 47(4), 2000, pp. 692-696
The effect of Er concentration on the morphology and photoluminescence of GaN : Er
Authors: Overberg, ME Brand, J MacKenzie, JD Abernathy, CR Pearton, SJ Zavada, JM
Citation: Me. Overberg et al., The effect of Er concentration on the morphology and photoluminescence of GaN : Er, J ELCHEM SO, 147(8), 2000, pp. 3117-3119
Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition
Authors: Lee, JW Mackenzie, KD Johnson, D Sasserath, JN Pearton, SJ Ren, F
Citation: Jw. Lee et al., Low temperature silicon nitride and silicon dioxide film processing by inductively coupled plasma chemical vapor deposition, J ELCHEM SO, 147(4), 2000, pp. 1481-1486
Cl-2/Ar high-density-plasma damage in GaN Schottky diodes
Authors: Zhang, AP Dang, G Ren, F Cao, XA Cho, H Lambers, ES Pearton, SJ Shul, RJ Zhang, L Baca, AG Hickman, R Van Hove, JM
Citation: Ap. Zhang et al., Cl-2/Ar high-density-plasma damage in GaN Schottky diodes, J ELCHEM SO, 147(2), 2000, pp. 719-722
Inductively coupled plasma etching of doped GaN films with Cl-2/Ar discharges
Authors: Cho, BC Im, YH Hahn, YB Nahm, KS Lee, YS Pearton, SJ
Citation: Bc. Cho et al., Inductively coupled plasma etching of doped GaN films with Cl-2/Ar discharges, J ELCHEM SO, 147(10), 2000, pp. 3914-3916
High-pressure process to produce GaN crystals
Authors: Gilbert, DR Novikov, A Patrin, N Budai, JS Kelly, F Chodelka, R Abbaschian, R Pearton, SJ Singh, R
Citation: Dr. Gilbert et al., High-pressure process to produce GaN crystals, APPL PHYS L, 77(25), 2000, pp. 4172-4174
Gd2O3/GaN metal-oxide-semiconductor field-effect transistor
Authors: Johnson, JW Luo, B Ren, F Gila, BP Krishnamoorthy, W Abernathy, CR Pearton, SJ Chyi, JI Nee, TE Lee, CM Chuo, CC
Citation: Jw. Johnson et al., Gd2O3/GaN metal-oxide-semiconductor field-effect transistor, APPL PHYS L, 77(20), 2000, pp. 3230-3232
Ultradeep, low-damage dry etching of SiC
Authors: Cho, H Leerungnawarat, P Hays, DC Pearton, SJ Chu, SNG Strong, RM Zetterling, CM Ostling, M Ren, F
Citation: H. Cho et al., Ultradeep, low-damage dry etching of SiC, APPL PHYS L, 76(6), 2000, pp. 739-741
Strong surface disorder and loss of N produced by ion bombardment of GaN
Authors: Kucheyev, SO Williams, JS Jagadish, C Li, G Pearton, SJ
Citation: So. Kucheyev et al., Strong surface disorder and loss of N produced by ion bombardment of GaN, APPL PHYS L, 76(26), 2000, pp. 3899-3901
Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers
Authors: Zhang, AP Dang, G Ren, F Han, J Polyakov, AY Smirnov, NB Govorkov, AV Redwing, JM Cho, H Pearton, SJ
Citation: Ap. Zhang et al., Temperature dependence and current transport mechanisms in AlxGa1-xN Schottky rectifiers, APPL PHYS L, 76(25), 2000, pp. 3816-3818
Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors
Authors: Monier, C Pearton, SJ Chang, PC Baca, AG Ren, F
Citation: C. Monier et al., Effect of Mg ionization efficiency on performance of Npn AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 76(21), 2000, pp. 3115-3117
Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors
Authors: Zhang, AP Dang, GT Ren, F Han, J Baca, AG Shul, RJ Cho, H Monier, C Cao, XA Abernathy, CR Pearton, SJ
Citation: Ap. Zhang et al., Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors, APPL PHYS L, 76(20), 2000, pp. 2943-2945
Al composition dependence of breakdown voltage in AlxGa1-xN Schottky rectifiers
Authors: Zhang, AP Dang, G Ren, F Han, J Polyakov, AY Smirnov, NB Govorkov, AV Redwing, JM Cao, XA Pearton, SJ
Citation: Ap. Zhang et al., Al composition dependence of breakdown voltage in AlxGa1-xN Schottky rectifiers, APPL PHYS L, 76(13), 2000, pp. 1767-1769
Electrical effects of Ar plasma damage on GaN diode rectifiers
Authors: Dang, G Zhang, AP Cao, XA Ren, F Cho, H Pearton, SJ Shul, RJ Zhang, L Hickman, R Van Hove, JM
Citation: G. Dang et al., Electrical effects of Ar plasma damage on GaN diode rectifiers, EL SOLID ST, 2(9), 1999, pp. 472-474
The use of amorphous SiO and SiO2 to passivate AuGe-based contact for GaAsintegrated circuits
Authors: LaRoche, JR Ren, F Lothian, JR Hong, J Pearton, SJ Lambers, E
Citation: Jr. Laroche et al., The use of amorphous SiO and SiO2 to passivate AuGe-based contact for GaAsintegrated circuits, EL SOLID ST, 2(8), 1999, pp. 395-397
Interhalogen plasma chemistries for the etching of NiMnSb
Authors: Cho, H Jung, KB Hahn, YB Hays, DC Caballero, JA Childress, JR Pearton, SJ
Citation: H. Cho et al., Interhalogen plasma chemistries for the etching of NiMnSb, EL SOLID ST, 2(2), 1999, pp. 70-71
905 nm wavelength laser as a means for in situ end-point detection of dry etching of AlxGa1-xAs on GaAs
Authors: Lee, JW Westerman, R Mackenzie, KD Donohue, JF Johnson, D Sasserath, JN Liddane, K Pearton, SJ
Citation: Jw. Lee et al., 905 nm wavelength laser as a means for in situ end-point detection of dry etching of AlxGa1-xAs on GaAs, EL SOLID ST, 2(12), 1999, pp. 640-641
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