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Results: 1-11 |
Results: 11
Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes
Authors: Auer, U Prost, W Agethen, M Tegude, FJ Duschl, R Eberl, K
Citation: U. Auer et al., Low-voltage MOBILE logic module based on Si/SiGe interband tunnelling diodes, IEEE ELEC D, 22(5), 2001, pp. 215-217
Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient
Authors: Keiper, D Velling, P Prost, W Agethen, M Tegude, FJ Landgren, G
Citation: D. Keiper et al., Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient, JPN J A P 1, 39(11), 2000, pp. 6162-6165
Threshold logic circuit design of parallel adders using resonant tunnelingdevices
Authors: Pacha, C Auer, U Burwick, C Glosekotter, P Brennemann, A Prost, W Tegude, FJ Goser, KF
Citation: C. Pacha et al., Threshold logic circuit design of parallel adders using resonant tunnelingdevices, IEEE VLSI, 8(5), 2000, pp. 558-572
Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logic
Authors: Pacha, C Kessler, O Glosekotter, P Goser, KF Prost, W Brennemann, A Auer, U Tegude, FJ
Citation: C. Pacha et al., Parallel adder design with reduced circuit complexity using resonant tunneling transistors and threshold logic, ANALOG IN C, 24(1), 2000, pp. 7-25
Manufacturability and robust design of nanoelectronic logic circuits basedon resonant tunnelling diodes
Authors: Prost, W Auer, U Tegude, FJ Pacha, C Goser, KF Janssen, G van der Roer, T
Citation: W. Prost et al., Manufacturability and robust design of nanoelectronic logic circuits basedon resonant tunnelling diodes, INT J CIRCU, 28(6), 2000, pp. 537-552
InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources
Authors: Velling, P Agethen, M Prost, W Tegude, FJ
Citation: P. Velling et al., InAlAs/InGaAs/InP heterostructures for RTD and HBT device applications grown by LP-MOVPE using non-gaseous sources, J CRYST GR, 221, 2000, pp. 722-729
Electro-optical examination of the band structure of ordered InGaAs
Authors: Spieler, J Kippenberg, T Krauss, J Kiesel, P Dohler, GH Velling, P Prost, W Tegude, FJ
Citation: J. Spieler et al., Electro-optical examination of the band structure of ordered InGaAs, APPL PHYS L, 76(1), 2000, pp. 88-90
Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures
Authors: Hilburger, U Fix, W Mayer, R Geisselbrecht, W Malzer, S Velling, P Prost, W Tegude, FJ Dohler, GH
Citation: U. Hilburger et al., Extension of the epitaxial shadow mask MBE technique for the monolithic integration and in situ fabrication of novel device structures, J CRYST GR, 202, 1999, pp. 574-577
InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport
Authors: Velling, P Janssen, G Agethen, M Prost, W Tegude, FJ
Citation: P. Velling et al., InGaP/GaAs hole barrier asymmetry determined by (002) X-ray reflections and p-type DB-RTD hole transport, J CRYST GR, 195(1-4), 1998, pp. 117-123
InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth
Authors: Velling, P Fix, W Geisselbrecht, W Prost, W Dohler, GH Tegude, FJ
Citation: P. Velling et al., InGaP/GaAs shadow-mask for optoelectronic integration and MBE regrowth, J CRYST GR, 195(1-4), 1998, pp. 490-494
NAND/NOR logic circuit using single InP-based RTBT
Authors: Velling, P Janssen, G Auer, U Prost, W Tegude, FJ
Citation: P. Velling et al., NAND/NOR logic circuit using single InP-based RTBT, ELECTR LETT, 34(25), 1998, pp. 2390-2392
Risultati: 1-11 |