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Results: 1-25/90
Authors:
SHAHAR D
HILKE M
LI CC
TSUI DC
SONDHI SL
CUNNINGHAM JE
RAZEGHI M
Citation: D. Shahar et al., A NEW TRANSPORT REGIME IN THE QUANTUM HALL-EFFECT, Solid state communications, 107(1), 1998, pp. 19-23
Authors:
KATO T
KUNG P
SAXLER A
SUN CJ
OHSATO H
RAZEGHI M
OKUDA T
Citation: T. Kato et al., SIMULTANEOUS GROWTH OF 2 DIFFERENTLY ORIENTED GAN EPILAYERS ON (11.0)SAPPHIRE II - A GROWTH-MODEL OF (00.1) AND (10.0) GAN, Journal of crystal growth, 183(1-2), 1998, pp. 131-139
Authors:
JELEN C
SLIVKEN S
DAVID T
RAZEGHI M
BROWN GJ
Citation: C. Jelen et al., NOISE PERFORMANCE OF INGAAS-INP QUANTUM-WELL INFRARED PHOTODETECTORS, IEEE journal of quantum electronics, 34(7), 1998, pp. 1124-1128
Authors:
JELEN C
SLIVKEN S
GUZMAN V
RAZEGHI M
BROWN GJ
Citation: C. Jelen et al., INGAALAS-INP QUANTUM-WELL INFRARED PHOTODETECTORS FOR 8-20-MU-M WAVELENGTHS, IEEE journal of quantum electronics, 34(10), 1998, pp. 1873-1876
Authors:
KIM S
MOHSENI H
ERDTMANN M
MICHEL E
JELEN C
RAZEGHI M
Citation: S. Kim et al., GROWTH AND CHARACTERIZATION OF INGAAS INGAP QUANTUM DOTS FOR MIDINFRARED PHOTOCONDUCTIVE DETECTOR/, Applied physics letters, 73(7), 1998, pp. 963-965
Authors:
LEE JJ
KIM JD
RAZEGHI M
Citation: Jj. Lee et al., ROOM-TEMPERATURE OPERATION OF 8-12 MU-M INSBBI INFRARED PHOTODETECTORS ON GAAS SUBSTRATES, Applied physics letters, 73(5), 1998, pp. 602-604
Authors:
WALKER D
SAXLER A
KUNG P
ZHANG X
HAMILTON M
DIAZ J
RAZEGHI M
Citation: D. Walker et al., VISIBLE BLIND GAN P-I-N PHOTODIODES, Applied physics letters, 72(25), 1998, pp. 3303-3305
Authors:
WU D
KAAS E
DIAZ J
LANE B
RYBALTOWSKI A
YI HJ
RAZEGHI M
Citation: D. Wu et al., INASSBP-INASSB-INAS DIODE-LASERS EMITTING AT 3.2-MU-M GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, IEEE photonics technology letters, 9(2), 1997, pp. 173-175
Authors:
KUNG P
ZHANG X
SAXLER A
WALKER D
RAZEGHI M
QIAN W
DRAVID VP
Citation: P. Kung et al., MOCVD GROWTH OF HIGH-QUALITY GAN-ALGAN BASED STRUCTURES ON AL2O3 SUBSTRATES WITH DISLOCATION DENSITY LESS-THAN 10(7) CM(-2), Journal of the European Ceramic Society, 17(15-16), 1997, pp. 1781-1785
Authors:
RAZEGHI M
Citation: M. Razeghi, IR IMAGING ARRAYS TURN TO QUANTUM-WELLS, Photonics spectra, 31(1), 1997, pp. 108-109
Authors:
RAZEGHI M
KUNG P
ZHANG X
WALKER D
SAXLER A
LIM KY
KIM KS
Citation: M. Razeghi et al., STRUCTURAL AND MICROSTRUCTURAL CHARACTERIZATION OF GAN THIN-FILMS ANDGAN-BASED HETEROSTRUCTURES GROWN ON SAPPHIRE SUBSTRATES, Journal of the Korean Physical Society, 30, 1997, pp. 1-6
Authors:
BESIKCI C
CIVAN Y
OZDER S
SEN O
JELEN C
SLIVKEN S
RAZEGHI M
Citation: C. Besikci et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH AND CHARACTERIZATION OF GA0.51IN0.49P INXGA1-XAS/GAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES/, Semiconductor science and technology, 12(11), 1997, pp. 1472-1478
Authors:
YI H
RAZEGHI M
Citation: H. Yi et M. Razeghi, GENERALIZED K-CENTER-DOT-P PERTURBATION-THEORY FOR ATOMIC-SCALE SUPERLATTICES, Physical review. B, Condensed matter, 56(7), 1997, pp. 3933-3936
Authors:
PAN W
SHAHAR D
TSUI DC
WEI HP
RAZEGHI M
Citation: W. Pan et al., QUANTUM HALL LIQUID-TO-INSULATOR TRANSITION IN IN1-XGAXAS INP HETEROSTRUCTURES/, Physical review. B, Condensed matter, 55(23), 1997, pp. 15431-15433
Authors:
KATO T
KUNG P
SAXLER A
SUN CJ
OHSATO H
RAZEGHI M
OKUDA T
Citation: T. Kato et al., MORPHOLOGY OF TWINNED GAN GROWN ON (11-CENTER-DOT-0) SAPPHIRE SUBSTRATES, Solid-state electronics, 41(2), 1997, pp. 227-229
Authors:
KATO T
OHSATO H
OKUDA T
KUNG P
SAXLER A
SUN CJ
RAZEGHI M
Citation: T. Kato et al., SIMULTANEOUS GROWTH OF 2 DIFFERENT ORIENTED GAN EPILAYERS ON (1-1.0)SAPPHIRE .1. MORPHOLOGY AND ORIENTATION, Journal of crystal growth, 173(3-4), 1997, pp. 244-248
Authors:
MICHEL E
MOHSENI H
KIM JD
WOJKOWSKI J
SANDVEN J
XU J
RAZEGHI M
BREDTHAUER R
VU P
MITCHEL W
AHOUJJA M
Citation: E. Michel et al., HIGH CARRIER LIFETIME INSB GROWN ON GAAS SUBSTRATES, Applied physics letters, 71(8), 1997, pp. 1071-1073
Authors:
LEE JK
CHO YH
CHOE BD
KIM KS
JEON HI
LIM H
RAZEGHI M
Citation: Jk. Lee et al., SCHOTTKY-BARRIER HEIGHTS AND CONDUCTION-BAND OFFSETS OF IN1-XGAXAS1-YPY LATTICE-MATCHED TO GAAS, Applied physics letters, 71(7), 1997, pp. 912-914
Authors:
KIM KS
SAXLER A
KUNG P
RAZEGHI M
LIM KY
Citation: Ks. Kim et al., DETERMINATION OF THE BAND-GAP ENERGY OF AL1-XINXN GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 71(6), 1997, pp. 800-802
Authors:
SAXLER A
WALKER D
KUNG P
ZHANG X
RAZEGHI M
SOLOMON J
MITCHEL WC
VYDYANATH HR
Citation: A. Saxler et al., COMPARISON OF TRIMETHYLGALLIUM AND TRIETHYLGALLIUM FOR THE GROWTH OF GAN, Applied physics letters, 71(22), 1997, pp. 3272-3274
Authors:
DIAZ J
YI HJ
RAZEGHI M
BURNHAM GT
Citation: J. Diaz et al., LONG-TERM RELIABILITY OF AL-FREE INGAASP GAAS (LAMBDA=808 NM) LASERS AT HIGH-POWER HIGH-TEMPERATURE OPERATION/, Applied physics letters, 71(21), 1997, pp. 3042-3044
Authors:
SLIVKEN S
JELEN C
RYBALTOWSKI A
DIAZ J
RAZEGHI M
Citation: S. Slivken et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF AN 8.5 MU-M QUANTUM CASCADE LASER, Applied physics letters, 71(18), 1997, pp. 2593-2595
Authors:
RYBALTOWSKI A
XIAO Y
WU D
LANE B
YI H
FENG H
DIAZ J
RAZEGHI M
Citation: A. Rybaltowski et al., HIGH-POWER INASSB LNPASSB/INAS MIDINFRARED LASERS/, Applied physics letters, 71(17), 1997, pp. 2430-2432
Authors:
LEE JJ
KIM JD
RAZEGHI M
Citation: Jj. Lee et al., LONG-WAVELENGTH INFRARED PHOTODETECTORS BASED ON INSBBI GROWN ON GAASSUBSTRATES, Applied physics letters, 71(16), 1997, pp. 2298-2300
Authors:
MOHSENI H
MICHEL E
SANDOEN J
RAZEGHI M
MITCHEL W
BROWN G
Citation: H. Mohseni et al., GROWTH AND CHARACTERIZATION OF INAS GASB PHOTOCONDUCTORS FOR LONG-WAVELENGTH INFRARED RANGE/, Applied physics letters, 71(10), 1997, pp. 1403-1405