AAAAAA
Results:
1-23
|
Results: 23
Authors:
KIM HS
WILLIAMS CK
REISMAN A
Citation: Hs. Kim et al., LOW-FIELD BULK DEFECT GENERATION DURING UNIFORM CARRIER INJECTION INTO THE GATE INSULATOR OF INSULATED GATE FIELD-EFFECT TRANSISTORS AT VARIOUS TEMPERATURES, Journal of electronic materials, 27(7), 1998, pp. 908-914
Authors:
REISMAN A
KUMAR A
MOTWANI J
CHENG CH
Citation: A. Reisman et al., CELLULAR MANUFACTURING - A STATISTICAL REVIEW OF THE LITERATURE (1965-1995), Operations research, 45(4), 1997, pp. 508-520
Authors:
KIM HS
WILLIAMS CK
REISMAN A
Citation: Hs. Kim et al., CHARGE CENTROID AND ORIGIN OF GENERATED AND INTRINSIC BULK DEFECTS AT293 AND 100 K IN INSULATED GATE FIELD-EFFECT TRANSISTORS, Journal of applied physics, 81(3), 1997, pp. 1566-1574
Authors:
REISMAN A
KUMAR A
MOTWANI J
Citation: A. Reisman et al., FLOWSHOP SCHEDULING SEQUENCING RESEARCH - A STATISTICAL REVIEW OF THELITERATURE, 1952-1994/, IEEE transactions on engineering management, 44(3), 1997, pp. 316-329
Authors:
KIM HS
REISMAN A
WILLIAMS CK
Citation: Hs. Kim et al., LOW-FIELD TRAP GENERATION DEPENDENCE ON THE INJECTION CURRENT-DENSITYIN GATE INSULATORS - HOW VALID ARE ACCELERATED HOT-ELECTRON MEASUREMENTS, Journal of the Electrochemical Society, 144(7), 1997, pp. 2517-2521
Authors:
REISMAN A
WILLIAMS CK
Citation: A. Reisman et Ck. Williams, SIO2 GATE INSULATOR DEFECTS, SPATIAL DISTRIBUTIONS, DENSITIES, TYPES,AND SIZES, Journal of electronic materials, 24(12), 1995, pp. 2015-2023
Authors:
REISMAN A
KIRSCHNICK F
Citation: A. Reisman et F. Kirschnick, RESEARCH STRATEGIES USED BY OR MS WORKERS AS SHOWN BY AN ANALYSIS OF PAPERS IN FLAGSHIP JOURNALS/, Operations research, 43(5), 1995, pp. 731-740
SELECTIVE EPITAXIAL-GROWTH OF SILICON BY THE AC TECHNIQUE .1. NONIMPLANTED SUBSTRATE OXIDE SURFACES/
Authors:
WANG QS
REISMAN A
TEMPLE D
ALBERTI R
Citation: Qs. Wang et al., SELECTIVE EPITAXIAL-GROWTH OF SILICON BY THE AC TECHNIQUE .1. NONIMPLANTED SUBSTRATE OXIDE SURFACES/, Journal of the Electrochemical Society, 142(7), 1995, pp. 2438-2449
Authors:
WANG QS
REISMAN A
TEMPLE D
ALBERTI R
Citation: Qs. Wang et al., SELECTIVE EPITAXIAL-GROWTH OF SILICON BY THE AC TECHNIQUE .2. ION-IMPLANTED SUBSTRATE OXIDE SURFACES/, Journal of the Electrochemical Society, 142(7), 1995, pp. 2450-2455
Authors:
WANG QS
REISMAN A
TEMPLE D
ALBERTI R
Citation: Qs. Wang et al., SELECTIVE EPITAXIAL-GROWTH OF SILICON BY THE AC TECHNIQUE .3. LATERALOVERGROWTH STRUCTURES, Journal of the Electrochemical Society, 142(7), 1995, pp. 2455-2457
Authors:
KIM HS
REISMAN A
WILLIAMS CK
BRUSH H
Citation: Hs. Kim et al., THE EFFECT OF TEMPERATURE ON ELECTRON-CAPTURE CROSS-SECTIONS AND DENSITIES IN IRRADIATED [2.4 MRADS(SIO2)] IGFETS, Journal of the Electrochemical Society, 142(6), 1995, pp. 2007-2012
Authors:
KIM HS
WILLIAMS CK
REISMAN A
Citation: Hs. Kim et al., INTRINSIC AND EXTRINSIC THRESHOLD VOLTAGE SHIFT DEPENDENCE ON THE OXIDE FIELD-INDUCED DURING OPTICALLY ASSISTED ELECTRON INJECTION, Journal of the Electrochemical Society, 142(3), 1995, pp. 979-985
Authors:
CHEN YD
REISMAN A
TURLIK I
TEMPLE D
Citation: Yd. Chen et al., CU CVD FROM COPPER(II) HEXAFLUOROACETYLACETONATE .1. A COLD-WALL REACTOR DESIGN, BLANKET GROWTH-RATE, AND NATURAL SELECTIVITY, Journal of the Electrochemical Society, 142(11), 1995, pp. 3903-3911
Authors:
CHEN YD
REISMAN A
TURLIK I
TEMPLE D
Citation: Yd. Chen et al., CU CVD FROM COPPER(II) HEXAFLUOROACETYLACETONATE .2. LASER-ASSISTED SELECTIVE-AREA DEPOSITION, Journal of the Electrochemical Society, 142(11), 1995, pp. 3911-3918
Authors:
REISMAN A
Citation: A. Reisman, CREATIVITY IN MS OR - EXPANDING KNOWLEDGE BY CONSOLIDATING KNOWLEDGE, Interfaces, 24(3), 1994, pp. 91-99
Authors:
REISMAN A
KIRSCHNICK F
Citation: A. Reisman et F. Kirschnick, THE DEVOLUTION OF OR MS - IMPLICATIONS FROM A STATISTICAL CONTENT-ANALYSIS OF PAPERS IN FLAGSHIP JOURNALS/, Operations research, 42(4), 1994, pp. 577-588
Authors:
REISMAN A
XU XM
Citation: A. Reisman et Xm. Xu, OPERATIONS-RESEARCH IN LIBRARIES - A REVIEW OF 25 YEARS OF ACTIVITY, Operations research, 42(1), 1994, pp. 34-40
Authors:
REISMAN A
Citation: A. Reisman, TECHNOLOGY MANAGEMENT - A BRIEF REVIEW OF THE LAST 40 YEARS AND SOME THOUGHTS ON ITS FUTURE, IEEE transactions on engineering management, 41(4), 1994, pp. 342-346
Authors:
WANG QS
REISMAN A
TEMPLE D
Citation: Qs. Wang et al., A THERMODYNAMIC ANALYSIS OF SELECTIVE-AREA CVD OF TITANIUM NITRIDE COMPOUND BY THE ALTERNATING CYCLIC METHOD, Journal of the Electrochemical Society, 141(4), 1994, pp. 1086-1094
Authors:
WANG QS
REISMAN A
TEMPLE D
Citation: Qs. Wang et al., SELECTIVE-AREA CHEMICAL-VAPOR-DEPOSITION OF SILICON BY THE ALTERNATING CYCLIC METHOD - A THERMODYNAMIC ANALYSIS, Journal of the Electrochemical Society, 141(2), 1994, pp. 593-602
Authors:
LIGHTDALE C
HEIER S
MARCON N
MCCAUGHAN J
NAVA H
OVERHOLT B
SOBEL R
GROSE M
REISMAN A
DUGAN M
Citation: C. Lightdale et al., A MULTICENTER PHASE-III TRIAL OF PHOTODYNAMIC THERAPY (PDT) VS ND-YAGLASER IN THE TREATMENT (RX) OF MALIGNANT DYSPHAGIA, Gastrointestinal endoscopy, 39(2), 1993, pp. 283-283
Authors:
BRIGHT R
REISMAN A
Citation: R. Bright et A. Reisman, INTRINSIC THRESHOLD VOLTAGE SHIFT DEPENDENCE ON THE OXIDE FIELD-INDUCED DURING OPTICALLY ASSISTED ELECTRON INJECTION, Journal of the Electrochemical Society, 140(7), 1993, pp. 2065-2070
Authors:
BRIGHT R
REISMAN A
Citation: R. Bright et A. Reisman, ANNEALING OF IONIZING-RADIATION INDUCED DEFECTS IN INSULATED GATE FIELD-EFFECT TRANSISTORS USING ELEVATED PRESSURE, Journal of the Electrochemical Society, 140(5), 1993, pp. 1482-1488
Risultati:
1-23
|