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Results:
1-21
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Results: 21
Authors:
LEECH PW
REEVES GK
ZHOU W
RESSEL P
Citation: Pw. Leech et al., THERMAL-STABILITY OF PD ZN AND PT BASED CONTACTS TO P-IN0.53GA0.47AS/INP WITH VARIOUS BARRIER LAYERS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 227-231
Authors:
ARENS M
KURPAS P
RESSEL P
WEYERS M
Citation: M. Arens et al., REAL-TIME GROWTH MONITORING OF INGAAS INP-HBT STRUCTURES WITH REFLECTANCE ANISOTROPY SPECTROSCOPY/, Thin solid films, 313, 1998, pp. 609-613
Authors:
RESSEL P
LEECH PW
VEIT P
NEBAUER E
KLEIN A
KUPHAL E
REEVES GK
HARTNAGEL HL
Citation: P. Ressel et al., OHMIC PD ZN/AU/LAB6/AU CONTACTS ON P-TYPE IN0.53GA0.47AS - ELECTRICALAND METALLURGICAL PROPERTIES/, Journal of applied physics, 84(2), 1998, pp. 861-869
Authors:
BEISTER G
BUGGE F
ERBERT G
MAEGE J
RESSEL P
SEBASTIAN J
THIES A
WENZEL H
Citation: G. Beister et al., MONOMODE EMISSION AT 350 MW AND HIGH-RELIABILITY WITH INGAAS ALGAAS (LAMBDA=1020 NM) RIDGE-WAVE-GUIDE LASER-DIODES/, Electronics Letters, 34(8), 1998, pp. 778-779
Authors:
RESSEL P
RICKER WJ
Citation: P. Ressel et Wj. Ricker, SEMIGROUP REPRESENTATIONS, POSITIVE-DEFINITE FUNCTIONS AND ABELIAN C-ASTERISK-ALGEBRAS, Proceedings of the American Mathematical Society, 126(10), 1998, pp. 2949-2955
Authors:
KLEIN A
URBAN I
RESSEL P
NEBAUER E
MERKEL U
OSTERLE W
Citation: A. Klein et al., PREPARATION, TRANSMISSION ELECTRON-MICROSCOPY, AND MICROANALYTICAL INVESTIGATIONS OF METAL-III-V SEMICONDUCTOR INTERFACES (REPRINTED FROM MATERIALS CHARACTERIZATION, VOL 37, PG 143-151, 1996), Materials characterization, 39(2-5), 1997, pp. 697-705
Authors:
MALINA V
VOGEL K
RESSEL P
BARNARD WO
KNAUER A
Citation: V. Malina et al., COMPARISON OF TI PT/AU AND TI/RU/AU CONTACT SYSTEMS TO P-TYPE INGAP/, Semiconductor science and technology, 12(10), 1997, pp. 1298-1303
Authors:
ERBERT G
BEISTER G
BUGGE F
MAEGE J
RESSEL P
SEBASTIAN J
VOGEL K
WENZEL H
WEYERS M
Citation: G. Erbert et al., STABLE OPERATION OF INGAAS INGAP/ALGAAS (LAMBDA=1020 NM) LASER-DIODES/, Electronics Letters, 33(9), 1997, pp. 778-779
Authors:
HAO PH
WANG LC
RESSEL P
KUO JM
Citation: Ph. Hao et al., LOW-RESISTANCE (SIMILAR-TO-1X10(-6)OMEGA-CM(2)) AU GE/PD OHMIC CONTACT TO N-AL0.5IN0.5P/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3244-3247
Authors:
KLEIN A
URBAN I
RESSEL P
NEBAUER E
MERKEL U
OSTERLE W
Citation: A. Klein et al., PREPARATION, TRANSMISSION ELECTRON-MICROSCOPY, AND MICROANALYTICAL INVESTIGATIONS OF METAL-III-V SEMICONDUCTOR INTERFACES, Materials characterization, 37(2-3), 1996, pp. 143-151
Authors:
OSTERLE W
RESSEL P
Citation: W. Osterle et P. Ressel, XTEM INVESTIGATION OF GE PD SHALLOW CONTACT TO P-IN0.53GA0.47AS/, Materials science & engineering. B, Solid-state materials for advanced technology, 40(1), 1996, pp. 42-49
Authors:
BLOOM WR
RESSEL P
Citation: Wr. Bloom et P. Ressel, EXPONENTIALLY BOUNDED POSITIVE-DEFINITE FUNCTIONS ON A COMMUTATIVE HYPERGROUP, Journal of the Australian Mathematical Society. Series A. Pure mathematics and statistics, 61, 1996, pp. 238-248
Authors:
STRUSNY H
RESSEL P
VOGEL K
WURFL J
Citation: H. Strusny et al., HE IMPLANT-DAMAGE ISOLATION OF MOVPE GROWN GAAS INCAP/INCAASP LAYERS/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 298-300
Authors:
RESSEL P
OSTERLE W
URBAN I
DORFEL I
KLEIN A
VOGEL K
KRAUTLE H
Citation: P. Ressel et al., TRANSMISSION ELECTRON-MICROSCOPY STUDY OF RAPID THERMALLY ANNEALED PDGE CONTACTS ON IN0.53GA0.47AS/, Journal of applied physics, 80(7), 1996, pp. 3910-3914
Authors:
RESSEL P
PARK MH
WANG LC
KUPHAL E
Citation: P. Ressel et al., SHALLOW AND LOW-RESISTIVE CONTACTS TO P-IN0.53GA0.47AS BASED ON PD SBAND PD/GE METALLIZATIONS/, Electronics Letters, 32(18), 1996, pp. 1734-1735
Authors:
RESSEL P
LEECH PW
REEVES GK
ZHOU W
KUPHAL E
Citation: P. Ressel et al., PD ZN/PD/AU AND PD/ZN/AU/LAB6/AU OHMIC CONTACTS TO P-TYPE IN0.53GA0.47AS/, Applied physics letters, 68(13), 1996, pp. 1841-1843
Authors:
RESSEL P
STRUSNY H
VOGEL K
WURFL J
FRITZSCHE D
KRAUTLE H
KUPHAL E
MAUSE K
TRAPP M
RICHTER U
Citation: P. Ressel et al., OHMIC CONTACTS ON P-IN0.53GA0.47AS PREPARED BY ZN IMPLANTATION IRATE PD-BASED METALLIZATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2297-2305
Authors:
BARNARD WO
MYBURG G
AURET FD
POTGIETER JH
RESSEL P
KUPHAL E
Citation: Wo. Barnard et al., THE ROLE OF RU IN IMPROVING SCHOTTKY AND OHMIC CONTACTS TO INP, Vacuum, 46(8-10), 1995, pp. 893-897
Authors:
RESSEL P
STRUSNY H
TRAPP M
KRAUTLE H
FRITZSCHE D
Citation: P. Ressel et al., SECONDARY-ION MASS-SPECTROSCOPY STUDY OF ZN OR CD IMPLANTED AND RAPIDTHERMALLY ANNEALED PD GE CONTACTS TO P-IN0.53GA0.47AS/, Applied physics letters, 65(9), 1994, pp. 1174-1176
Authors:
RESSEL P
Citation: P. Ressel, BOCHNER THEOREM FOR FINITE-DIMENSIONAL CONE-LIKE SEMIGROUPS, Mathematische Annalen, 296(3), 1993, pp. 431-440
Authors:
RESSEL P
STRUSNY H
GRAMLICH S
ZEIMER U
SEBASTIAN J
VOGEL K
Citation: P. Ressel et al., OPTIMIZED PROTON IMPLANTATION STEP FOR VERTICAL-CAVITY SURFACE-EMITTING LASERS, Electronics Letters, 29(10), 1993, pp. 918-919
Risultati:
1-21
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