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Results: 1-25/26
Authors:
KAPPLER J
BARSAN N
WEIMAR U
DIEGUEZ A
ALAY JL
ROMANORODRIGUEZ A
MORANTE JR
GOPEL W
Citation: J. Kappler et al., CORRELATION BETWEEN XPS, RAMAN AND TEM MEASUREMENTS AND THE GAS SENSITIVITY OF PT AND PD DOPED SNO2 BASED GAS SENSORS, Fresenius' journal of analytical chemistry, 361(2), 1998, pp. 110-114
Authors:
GALAYEV AA
PARKHOMENKO YN
CHTCHERBATCHEV KD
PODGORNY DA
BELOGOROHOV AI
DIEGUEZ A
ROMANORODRIGUEZ A
PEREZRODRIGUEZ A
MORANTE JR
Citation: Aa. Galayev et al., STRUCTURAL-ANALYSIS OF BURIED CONDUCTING COSI2 LAYERS FORMED IN SI BYHIGH-DOSE CO ION-IMPLANTATION, Journal of crystal growth, 187(3-4), 1998, pp. 435-443
Authors:
BONAFOS C
GARRIDO B
LOPEZ M
ROMANORODRIGUEZ A
GONZALEZVARONA O
PEREZRODRIGUEZ A
MORANTE JR
Citation: C. Bonafos et al., ION-BEAM SYNTHESIS AND STRUCTURAL CHARACTERIZATION OF ZNS NANOCRYSTALS IN SIO2, Applied physics letters, 72(26), 1998, pp. 3488-3490
Authors:
SANGALETTI T
DEPERO LE
DIEGUEZ A
MARCA G
MORANTE JR
ROMANORODRIGUEZ A
SBERVEGLIERI G
Citation: T. Sangaletti et al., MICROSTRUCTURE AND MORPHOLOGY OF TIN DIOXIDE MULTILAYER THIN-FILM GASSENSORS, Sensors and actuators. B, Chemical, 44(1-3), 1997, pp. 268-274
Authors:
SERRE C
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
CALVOBARRIO L
MORANTE JR
ESTEVE J
ACERO MC
SKORUPA W
KOGLER R
Citation: C. Serre et al., SYNTHESIS OF SIC MICROSTRUCTURES IN SI TECHNOLOGY BY HIGH-DOSE CARBONIMPLANTATION - ETCH-STOP PROPERTIES, Journal of the Electrochemical Society, 144(6), 1997, pp. 2211-2215
Authors:
DIEGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
BARSAN N
WEIMAR U
GOPEL W
Citation: A. Dieguez et al., NONDESTRUCTIVE ASSESSMENT OF THE GRAIN-SIZE DISTRIBUTION OF SNO2 NANOPARTICLES BY LOW-FREQUENCY RAMAN-SPECTROSCOPY, Applied physics letters, 71(14), 1997, pp. 1957-1959
Authors:
DIEGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
WEIMAR U
SCHWEIZERBERBERICH M
GOPEL W
Citation: A. Dieguez et al., MORPHOLOGICAL ANALYSIS OF NANOCRYSTALLINE SNO2 FOR GAS SENSOR APPLICATIONS, Sensors and actuators. B, Chemical, 31(1-2), 1996, pp. 1-8
Authors:
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
PEREZRODRIGUEZ A
MORANTE JR
KOGLER R
SKORUPA W
Citation: A. Romanorodriguez et al., DETAILED ANALYSIS OF BETA-SIC FORMATION BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 282-285
Authors:
GARRIDO B
LOPEZ M
FERRE S
ROMANORODRIGUEZ A
PEREZRODRIGUEZ A
RUTERANA P
MORANTE JR
Citation: B. Garrido et al., VISIBLE PHOTOLUMINESCENCE OF SIO2 IMPLANTED WITH CARBON AND SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 101-105
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
CABEZAS R
MORANTE JR
CALDERER J
REUTHER H
SKORUPA W
Citation: A. Perezrodriguez et al., ION-BEAM SYNTHESIS AND RECRYSTALLIZATION OF AMORPHOUS SIGE SIC STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 151-155
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
SERRE C
CALVOBARRIO L
CABEZAS R
GONZALEZVARONA O
MORANTE JR
KOGLER R
SKORUPA W
RODRIGUEZ A
Citation: A. Perezrodriguez et al., HIGH-TEMPERATURE HIGH-DOSE C ION-IMPLANTATION IN EPITAXIAL SIGE, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 173-176
Authors:
PEREZRODRIGUEZ A
KOGLER R
CALVOBARRIO L
SERRE C
ROMANORODRIGUEZ A
HEERA V
SKORUPA W
MORANTE JR
Citation: A. Perezrodriguez et al., ION-BEAM-ASSISTED RECRYSTALLIZATION OF SIC SI STRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 334-337
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
CABEZAS R
MORANTE JR
JAWHARI T
HUNT CE
Citation: A. Perezrodriguez et al., EFFECT OF STRESS AND COMPOSITION ON THE RAMAN-SPECTRA OF ETCH-STOP SIGEB LAYERS, Journal of applied physics, 80(10), 1996, pp. 5736-5741
Authors:
SERRE C
CALVOBARRIO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
PACAUD Y
KOGLER R
HEERA V
SKORUPA W
Citation: C. Serre et al., ION-BEAM SYNTHESIS OF AMORPHOUS SIC FILMS - STRUCTURAL-ANALYSIS AND RECRYSTALLIZATION, Journal of applied physics, 79(9), 1996, pp. 6907-6913
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
ACERO MC
ESTEVE J
MONTSERRAT J
ELHASSANI A
Citation: A. Perezrodriguez et al., ETCH-STOP BEHAVIOR OF BURIED LAYERS FORMED BY SUBSTOICHIOMETRIC NITROGEN ION-IMPLANTATION INTO SILICON, Journal of the Electrochemical Society, 143(3), 1996, pp. 1026-1033
Authors:
CALVOBARRIO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
MONTSERRAT J
Citation: L. Calvobarrio et al., ION-BEAM SYNTHESIS OF ALUMINUM NITRIDE - CHARACTERIZATION OF THIN ALNLAYERS FORMED IN MICROELECTRONICS ALUMINUM, Materials science and technology, 11(11), 1995, pp. 1187-1190
Authors:
VANHELLEMONT J
ROMANORODRIGUEZ A
FEDINA L
VANLANDUYT J
ASEEV A
Citation: J. Vanhellemont et al., POINT-DEFECT REACTIONS IN SILICON STUDIED IN-SITU BY HIGH-FLUX ELECTRON-IRRADIATION IN HIGH-VOLTAGE TRANSMISSION ELECTRON-MICROSCOPE, Materials science and technology, 11(11), 1995, pp. 1194-1202
Authors:
SERRE C
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
KOGLER R
SKORUPA W
Citation: C. Serre et al., SPECTROSCOPIC CHARACTERIZATION OF PHASES FORMED BY HIGH-DOSE CARBON ION-IMPLANTATION IN SILICON, Journal of applied physics, 77(7), 1995, pp. 2978-2984
Authors:
ACERO MC
ESTEVE J
MONTSERRAT J
BAUSELLS J
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
Citation: Mc. Acero et al., ANISOTROPIC ETCH-STOP PROPERTIES OF NITROGEN-IMPLANTED SILICON, Sensors and actuators. A, Physical, 45(3), 1994, pp. 219-225
Authors:
VANHELLEMONT J
ROMANORODRIGUEZ A
Citation: J. Vanhellemont et A. Romanorodriguez, ON THE INFLUENCE OF EXTRINSIC POINT-DEFECTS ON IRRADIATION-INDUCED POINT-DEFECT DISTRIBUTIONS IN SILICON, Applied physics. A, Solids and surfaces, 58(6), 1994, pp. 541-549
Authors:
CALVO L
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MORANTE JR
MONTSERRAT J
Citation: L. Calvo et al., STRUCTURAL-ANALYSIS OF BURIED ALN THIN-FILMS FORMED BY NITROGEN IMPLANTATION INTO MICROELECTRONICS GRADE ALUMINUM, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 214-217
Authors:
PEREZRODRIGUEZ A
ROMANORODRIGUEZ A
MACIA J
MORANTE JR
MARTIN E
JIMENEZ J
Citation: A. Perezrodriguez et al., OPTICAL CHARACTERIZATION OF SIMOX STRUCTURES FORMED BY SUCCESSIVE IMPLANTATION AND ANNEALING, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 275-280
Authors:
ROMANORODRIGUEZ A
VANHELLEMONT J
Citation: A. Romanorodriguez et J. Vanhellemont, INSITU HVEM STUDY OF DOPANT DEPENDENT (113)-DEFECT GENERATION IN SILICON DURING 1-MEV ELECTRON-IRRADIATION, Microscopy research and technique, 25(2), 1993, pp. 181-182
Authors:
VANHELLEMONT J
ROMANORODRIGUEZ A
Citation: J. Vanhellemont et A. Romanorodriguez, ON THE INFLUENCE OF INTERFACES AND LOCALIZED STRESS-FIELDS ON IRRADIATION-INDUCED POINT-DEFECT DISTRIBUTIONS IN SILICON, Applied physics. A, Solids and surfaces, 57(6), 1993, pp. 521-527
Authors:
ROMANORODRIGUEZ A
ELHASSANI A
SAMITIER J
PEREZRODRIGUEZ A
MARTINEZ S
MORANTE JR
ESTEVE J
MONTSERRAT J
Citation: A. Romanorodriguez et al., STRUCTURAL CHARACTERIZATION OF NITROGEN ION-IMPLANTATION INTO SILICONFOR SENSOR TECHNOLOGY, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 702-705