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Results:
1-9
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Results: 9
Authors:
NIU GF
CHEN RMM
RUAN G
TANG TA
Citation: Gf. Niu et al., DEFINITION OF EFFECTIVE CHANNEL-LENGTH (L-EFF) IN DEEP-SUBMICRON MOSFETS BASED ON NUMERICALLY SIMULATED SURFACE-POTENTIAL, Solid-state electronics, 41(9), 1997, pp. 1377-1382
Authors:
NIU GF
RUAN G
Citation: Gf. Niu et G. Ruan, EFFECT OF SUBSTRATE BIAS IN BULK AND SOI SIGE-CHANNEL P-MOSFETS, Solid-state electronics, 39(2), 1996, pp. 305-307
Authors:
NIU GF
RUAN G
ZHANG DH
Citation: Gf. Niu et al., MODELING OF HOLE CONFINEMENT GATE VOLTAGE RANGE FOR SIGE CHANNEL P-MOSFETS, Solid-state electronics, 39(1), 1996, pp. 69-73
Authors:
NIU GF
RUAN G
CHEN RMM
Citation: Gf. Niu et al., THRESHOLD VOLTAGE MODEL FOR DEEP-SUBMICROMETER MOSFETS AND ITS EXTENSION TO SUBTHRESHOLD OPERATION - FURTHER COMMENTS, I.E.E.E. transactions on electron devices, 43(12), 1996, pp. 2311-2312
Authors:
NIU GF
CHEN RMM
RUAN G
Citation: Gf. Niu et al., COMPARISONS AND EXTENSION OF RECENT SURFACE-POTENTIAL MODELS FOR FULLY DEPLETED SHORT-CHANNEL SOI MOSFETS, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 2034-2037
Authors:
NIU GF
RUAN G
TANG TA
Citation: Gf. Niu et al., INVERSION CHARGE MODELING OF SIGE PMOS AND APPROACHES TO INCREASING THE HOLE DENSITY IN THE SIGE CHANNEL, Solid-state electronics, 38(2), 1995, pp. 323-329
Authors:
NIU GF
RUAN G
Citation: Gf. Niu et G. Ruan, AN ANALYTICAL BACK GATE BIAS DEPENDENT SUBTHRESHOLD SWING MODEL FOR ACCUMULATION-MODE P-CHANNEL SOI MOSFETS, Solid-state electronics, 38(10), 1995, pp. 1805-1810
Authors:
NIU GF
RUAN G
Citation: Gf. Niu et G. Ruan, PUNCHTHROUGH PATH IN DOUBLE GATE SOI MOSFETS, Solid-state electronics, 38(10), 1995, pp. 1848-1850
Authors:
NIU GF
RUAN G
Citation: Gf. Niu et G. Ruan, THRESHOLD VOLTAGE AND INVERSION CHARGE MODELING OF GRADED SIGE-CHANNEL MODULATION-DOPED P-MOSFETS, I.E.E.E. transactions on electron devices, 42(12), 1995, pp. 2242-2246
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1-9
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