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Results: 1-25/38
Authors:
Razeghi, M
Slivken, S
Tahraoui, A
Matlis, A
Park, YS
Citation: M. Razeghi et al., High power 3-12 mu m infrared lasers: recent improvements and future trends, PHYSICA E, 11(2-3), 2001, pp. 233-239
Authors:
Razeghi, M
Erdtmann, M
Jelen, C
Guastavinos, F
Brown, GJ
Park, YS
Citation: M. Razeghi et al., Development of quantum well infrared photodetectors at the Center for Quantum Devices, INFR PHYS T, 42(3-5), 2001, pp. 135-148
Authors:
Mohseni, H
Razeghi, M
Citation: H. Mohseni et M. Razeghi, Long-wavelength type-II photodiodes operating at room temperature, IEEE PHOTON, 13(5), 2001, pp. 517-519
Authors:
Sandvik, P
Mi, K
Shahedipour, F
McClintock, R
Yasan, A
Kung, P
Razeghi, M
Citation: P. Sandvik et al., AlxGa1-xN for solar-blind UV detectors, J CRYST GR, 231(3), 2001, pp. 366-370
Authors:
Tahraoui, A
Matlis, A
Slivken, S
Diaz, J
Razeghi, M
Citation: A. Tahraoui et al., High-performance quantum cascade lasers (lambda similar to 11 mu m) operating at high temperature (T >= 425 K), APPL PHYS L, 78(4), 2001, pp. 416-418
Authors:
Mohseni, H
Razeghi, M
Brown, GJ
Park, YS
Citation: H. Mohseni et al., High-performance InAs/GaSb superlattice photodiodes for the very long wavelength infrared range, APPL PHYS L, 78(15), 2001, pp. 2107-2109
Authors:
Razeghi, M
Citation: M. Razeghi, Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years, IEEE S T QU, 6(6), 2000, pp. 1344-1354
Authors:
Lane, B
Tong, S
Diaz, J
Wu, Z
Razeghi, M
Citation: B. Lane et al., High power InAsSb/InAsSbP electrical injection laser diodes emitting between 3 and 5 mu m, MAT SCI E B, 74(1-3), 2000, pp. 52-55
Authors:
Razeghi, M
Sandvik, P
Kung, P
Walker, D
Mi, K
Zhang, X
Kumar, V
Diaz, J
Shahedipour, F
Citation: M. Razeghi et al., Lateral epitaxial overgrowth of GaN on sapphire and silicon substrates forultraviolet photodetector applications, MAT SCI E B, 74(1-3), 2000, pp. 107-112
Authors:
Razeghi, M
Batt, ME
Citation: M. Razeghi et Me. Batt, Biomechanical analysis of the effect of orthotic shoe inserts - A review of the literature, SPORT MED, 29(6), 2000, pp. 425-438
Authors:
Lee, JJ
Razeghi, M
Citation: Jj. Lee et M. Razeghi, Novel Sb-based materials for uncooled infrared photodetector applications, J CRYST GR, 221, 2000, pp. 444-449
Authors:
Lane, B
Razeghi, M
Citation: B. Lane et M. Razeghi, High-power electrically injected mid-infrared interband lasers grown by LP-MOCVD, J CRYST GR, 221, 2000, pp. 679-682
Authors:
Matlis, A
Slivken, S
Tahraoui, A
Luo, KJ
Diaz, J
Wu, Z
Rybaltowski, A
Jelen, C
Razeghi, M
Citation: A. Matlis et al., Low-threshold and high power lambda similar to 9.0 mu m quantum cascade lasers operating at room temperature, APPL PHYS L, 77(12), 2000, pp. 1741-1743
Authors:
Mohseni, H
Tahraoui, A
Wojkowski, J
Razeghi, M
Brown, GJ
Mitchel, WC
Park, YS
Citation: H. Mohseni et al., Very long wavelength infrared type-II detectors operating at 80 K, APPL PHYS L, 77(11), 2000, pp. 1572-1574
Authors:
Walker, D
Kumar, V
Mi, K
Sandvik, P
Kung, P
Zhang, XH
Razeghi, M
Citation: D. Walker et al., Solar-blind AlGaN photodiodes with very low cutoff wavelength, APPL PHYS L, 76(4), 2000, pp. 403-405
Authors:
Lee, JJ
Razeghi, M
Citation: Jj. Lee et M. Razeghi, Tl incorporation in InSb and lattice contraction of In1-xTlxSb, APPL PHYS L, 76(3), 2000, pp. 297-299
Authors:
Lee, JJ
Kim, JD
Razeghi, M
Citation: Jj. Lee et al., Exploration of novel InSbBi alloy for uncooled infrared photodetector applications, J KOR PHYS, 35, 1999, pp. S275-S278
Authors:
Kim, S
Erdtmann, M
Razeghi, M
Citation: S. Kim et al., Growth and characterization of InGaAs/InGaP quantum dots for mid-infrared photodetectors, J KOR PHYS, 35, 1999, pp. S303-S306
Authors:
Yi, HJ
Razeghi, M
Citation: Hj. Yi et M. Razeghi, Theoretical and experimental analysis of high power Al-free InGaAsP/GaAs (lambda=0.808 mu m) laser diodes, J KOR PHYS, 35, 1999, pp. S387-S390
Authors:
Razeghi, M
Kung, P
Walker, D
Monroy, E
Hamilton, M
Sandvik, P
Citation: M. Razeghi et al., Development of high-performance III-nitride-based semiconductor devices, J KOR PHYS, 34, 1999, pp. S234-S243
Authors:
Litvinov, VI
Razeghi, M
Citation: Vi. Litvinov et M. Razeghi, Exciton localization in group-III nitride quantum wells, PHYS REV B, 59(15), 1999, pp. 9783-9786
Authors:
Razeghi, M
Citation: M. Razeghi, Kinetics of quantum states in quantum cascade lasers: device design principles and fabrication, MICROELEC J, 30(10), 1999, pp. 1019-1029
Authors:
Hahn, DN
Kiehne, GT
Ketterson, JB
Wong, GKL
Kung, P
Saxler, A
Razeghi, M
Citation: Dn. Hahn et al., Phase-matched optical second-harmonic generation in GaN and AlN slab waveguides, J APPL PHYS, 85(5), 1999, pp. 2497-2501
Authors:
Slivken, S
Litvinov, VI
Razeghi, M
Meyer, JR
Citation: S. Slivken et al., Relaxation kinetics in quantum cascade lasers, J APPL PHYS, 85(2), 1999, pp. 665-671
Authors:
Mohseni, H
Wojkowski, J
Razeghi, M
Brown, G
Mitchel, W
Citation: H. Mohseni et al., Uncooled InAs-GaSb type-II infrared detectors grown on GaAs substrates forthe 8-12-mu m atmospheric window, IEEE J Q EL, 35(7), 1999, pp. 1041-1044