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Results: 1-24 |
Results: 24
Lucky-drift model for nonlocal impact ionisation
Authors: Jacob, B Plimmer, SA Robson, PN Rees, GJ
Citation: B. Jacob et al., Lucky-drift model for nonlocal impact ionisation, IEE P-OPTO, 148(1), 2001, pp. 81-83
Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy
Authors: Moran, M Meidia, H Fleischmann, T Norris, DJ Rees, GJ Cullis, AG Hopkinson, M
Citation: M. Moran et al., Indium segregation in (111)B GaAs-InxGa1-xAs quantum wells determined by transmission electron microscopy, J PHYS D, 34(13), 2001, pp. 1943-1946
Treatment of soft threshold in impact ionization
Authors: Tan, CH David, JPR Rees, GJ Tozer, RC Herbert, DC
Citation: Ch. Tan et al., Treatment of soft threshold in impact ionization, J APPL PHYS, 90(5), 2001, pp. 2538-2543
Fokker-Planck model for nonlocal impact ionization in semiconductors
Authors: Jacob, B Robson, PN David, JPR Rees, GJ
Citation: B. Jacob et al., Fokker-Planck model for nonlocal impact ionization in semiconductors, J APPL PHYS, 90(3), 2001, pp. 1314-1317
Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition
Authors: Fleischmann, T Moran, M Hopkinson, M Meidia, H Rees, GJ Cullis, AG Sanchez-Rojas, JL Izpura, I
Citation: T. Fleischmann et al., Strained layer (111)B GaAs/InGaAs single quantum well lasers and the dependence of their characteristics upon indium composition, J APPL PHYS, 89(9), 2001, pp. 4689-4696
Impact ionization probabilities as functions of two-dimensional space and time
Authors: Plimmer, SA David, JPR Jacob, B Rees, GJ
Citation: Sa. Plimmer et al., Impact ionization probabilities as functions of two-dimensional space and time, J APPL PHYS, 89(5), 2001, pp. 2742-2751
Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes
Authors: Tan, CH David, JPR Plimmer, SA Rees, GJ Tozer, RC Grey, R
Citation: Ch. Tan et al., Low multiplication noise thin Al0.6Ga0.4As avalanche photodiodes, IEEE DEVICE, 48(7), 2001, pp. 1310-1317
Avalanche multiplication characteristics of Al0.8Ga0.2As diodes
Authors: Ng, BK David, JPR Plimmer, SA Rees, GJ Tozer, RC Hopkinson, M Hill, G
Citation: Bk. Ng et al., Avalanche multiplication characteristics of Al0.8Ga0.2As diodes, IEEE DEVICE, 48(10), 2001, pp. 2198-2204
Donald Cameron Watson - Obituary
Authors: McConnell, RB Rees, GJ
Citation: Rb. Mcconnell et Gj. Rees, Donald Cameron Watson - Obituary, BR MED J, 321(7267), 2000, pp. 1025-1025
Ionization coefficients in AlxGa1-xAs (x=0-0.60)
Authors: Plimmer, SA David, JPR Rees, GJ Robson, PN
Citation: Sa. Plimmer et al., Ionization coefficients in AlxGa1-xAs (x=0-0.60), SEMIC SCI T, 15(7), 2000, pp. 692-699
Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures
Authors: Chia, CK David, JPR Plimmer, SA Rees, GJ Grey, R Robson, PN
Citation: Ck. Chia et al., Avalanche multiplication in submicron AlxGa1-xAs/GaAs multilayer structures, J APPL PHYS, 88(5), 2000, pp. 2601-2608
Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p(+)-i-n(+) diodes
Authors: Ong, DS Li, KF Plimmer, SA Rees, GJ David, JPR Robson, PN
Citation: Ds. Ong et al., Full band Monte Carlo modeling of impact ionization, avalanche multiplication, and noise in submicron GaAs p(+)-i-n(+) diodes, J APPL PHYS, 87(11), 2000, pp. 7885-7891
Avalanche noise characteristics of thin GaAs structures with distributed carrier generation
Authors: Li, KF Ong, DS David, JPR Tozer, RC Rees, GJ Plimmer, SA Chang, KY Roberts, JS
Citation: Kf. Li et al., Avalanche noise characteristics of thin GaAs structures with distributed carrier generation, IEEE DEVICE, 47(5), 2000, pp. 910-914
Avalanche multiplication in AlxGa1-xAs (x=0to0.60)
Authors: Plimmer, SA David, JPR Grey, R Rees, GJ
Citation: Sa. Plimmer et al., Avalanche multiplication in AlxGa1-xAs (x=0to0.60), IEEE DEVICE, 47(5), 2000, pp. 1089-1097
Impact ionization coefficients of Al0.8Ga0.2As
Authors: Ng, BK David, JPR Plimmer, SA Hopkinson, M Tozer, RC Rees, GJ
Citation: Bk. Ng et al., Impact ionization coefficients of Al0.8Ga0.2As, APPL PHYS L, 77(26), 2000, pp. 4374-4376
Avalanche noise measurement in thin Si p(+)-i-n(+) diodes
Authors: Tan, CH Clark, JC David, JPR Rees, GJ Plimmer, SA Tozer, RC Herbert, DC Robbins, DJ Leong, WY Newey, J
Citation: Ch. Tan et al., Avalanche noise measurement in thin Si p(+)-i-n(+) diodes, APPL PHYS L, 76(26), 2000, pp. 3926-3928
Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors
Authors: Li, KF Ong, DS David, JPR Tozer, RC Rees, GJ Robson, PN Grey, R
Citation: Kf. Li et al., Low noise GaAs and Al0.3Ga0.7As avalanche photodetectors, IEE P-OPTO, 146(1), 1999, pp. 21-24
Operating characteristics of GaAs-InGaAs self-biased piezoelectric S-SEEDs
Authors: Moran, M Rees, GJ Woodhead, J
Citation: M. Moran et al., Operating characteristics of GaAs-InGaAs self-biased piezoelectric S-SEEDs, IEE P-OPTO, 146(1), 1999, pp. 31-34
Piezoelectric InGaAs AlGaAs laser with intracavity absorber
Authors: Khoo, EA Pabla, AS Woodhead, J David, JPR Grey, R Rees, GJ
Citation: Ea. Khoo et al., Piezoelectric InGaAs AlGaAs laser with intracavity absorber, IEE P-OPTO, 146(1), 1999, pp. 62-66
Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication
Authors: Li, KF Plimmer, SA David, JPR Tozer, RC Rees, GJ Robson, PN Button, CC Clark, JC
Citation: Kf. Li et al., Low avalanche noise characteristics in thin InP p(+)-i-n(+) diodes with electron initiated multiplication, IEEE PHOTON, 11(3), 1999, pp. 364-366
Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes
Authors: Dunn, GM Ghin, R Rees, GJ David, JPR Plimmer, S Herbert, DC
Citation: Gm. Dunn et al., Monte Carlo simulation of high-field transport and impact ionization in AlGaAs p(+)in(+) diodes, SEMIC SCI T, 14(11), 1999, pp. 994-1000
Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber
Authors: Khoo, EA Woodhead, J David, JPR Grey, R Rees, GJ
Citation: Ea. Khoo et al., Optical bistability in piezoelectric InGaAs/AlGaAs laser with saturable absorber, ELECTR LETT, 35(2), 1999, pp. 150-152
The effect of an electric-field gradient on avalanche noise
Authors: Plimmer, SA Tan, CH David, JPR Grey, R Li, KF Rees, GJ
Citation: Sa. Plimmer et al., The effect of an electric-field gradient on avalanche noise, APPL PHYS L, 75(19), 1999, pp. 2963-2965
Photoluminescence linewidths of piezoelectric quantum wells
Authors: Khoo, EA David, JPR Woodhead, J Grey, R Rees, GJ
Citation: Ea. Khoo et al., Photoluminescence linewidths of piezoelectric quantum wells, APPL PHYS L, 75(13), 1999, pp. 1929-1931
Risultati: 1-24 |