AAAAAA

   
Results: 1-25 | 26-43
Results: 1-25/43
Edge-emitting microlasers with one active layer of quantum dots
Authors: Rennon, S Avary, K Klopf, F Reithmaier, JP Forchel, A
Citation: S. Rennon et al., Edge-emitting microlasers with one active layer of quantum dots, IEEE S T QU, 7(2), 2001, pp. 300-305
Complex coupled distributed-feedback and Bragg-reflector lasers for monolithic device integration based on focused-ion-beam technology
Authors: Rennon, S Bach, L Reithmaier, JP Forchel, A
Citation: S. Rennon et al., Complex coupled distributed-feedback and Bragg-reflector lasers for monolithic device integration based on focused-ion-beam technology, IEEE S T QU, 7(2), 2001, pp. 306-311
High-temperature operating 1.3-mu m quantum-dot lasers for telecommunication applications
Authors: Klopf, F Krebs, R Reithmaier, JP Forchel, A
Citation: F. Klopf et al., High-temperature operating 1.3-mu m quantum-dot lasers for telecommunication applications, IEEE PHOTON, 13(8), 2001, pp. 764-766
Semiconductor lasers with 2-D-photonic crystal mirrors based on a wet-oxidized Al2O3-Mask
Authors: Moosburger, J Kamp, M Klopf, E Reithmaier, JP Forchel, A
Citation: J. Moosburger et al., Semiconductor lasers with 2-D-photonic crystal mirrors based on a wet-oxidized Al2O3-Mask, IEEE PHOTON, 13(5), 2001, pp. 406-408
Lateral coupling - a material independent way to complex coupled DFB lasers
Authors: Kamp, M Hofmann, J Schafer, F Reinhard, M Fischer, M Bleuel, T Reithmaier, JP Forchel, A
Citation: M. Kamp et al., Lateral coupling - a material independent way to complex coupled DFB lasers, OPT MATER, 17(1-2), 2001, pp. 19-25
Photon band gap systems from semiconductor microcavities
Authors: Reinecke, TL Knipp, PA Rudin, S Bayer, M Reithmaier, JP Forchel, A
Citation: Tl. Reinecke et al., Photon band gap systems from semiconductor microcavities, SYNTH METAL, 116(1-3), 2001, pp. 457-460
980 nm quantum dot lasers with very small threshold current densities
Authors: Klopf, F Reithmaier, JP Forchel, A
Citation: F. Klopf et al., 980 nm quantum dot lasers with very small threshold current densities, PHYS ST S-B, 224(3), 2001, pp. 845-848
Two-dimensional photonic crystal laser mirrors
Authors: Happ, TD Kamp, M Klopf, F Reithmaier, JP Forchel, A
Citation: Td. Happ et al., Two-dimensional photonic crystal laser mirrors, SEMIC SCI T, 16(4), 2001, pp. 227-232
Reactive ion etching of deeply etched DBR-structures with reduced air-gapsfor-highly reflective monolithically integrated laser mirrors
Authors: Avary, K Rennon, S Klopf, F Reithmaier, JP Forchel, A
Citation: K. Avary et al., Reactive ion etching of deeply etched DBR-structures with reduced air-gapsfor-highly reflective monolithically integrated laser mirrors, MICROEL ENG, 57-8, 2001, pp. 593-598
Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication
Authors: Rennon, S Bach, L Konig, H Reithmaier, JP Forchel, A Gentner, JL Goldstein, L
Citation: S. Rennon et al., Nanoscale patterning by focused ion beam enhanced etching for optoelectronic device fabrication, MICROEL ENG, 57-8, 2001, pp. 891-896
Photonic defect states in chains of coupled microresonators - art. no. 155313
Authors: Guttroff, G Bayer, M Reithmaier, JP Forchel, A Knipp, PA Reinecke, TL
Citation: G. Guttroff et al., Photonic defect states in chains of coupled microresonators - art. no. 155313, PHYS REV B, 6415(15), 2001, pp. 5313
Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots
Authors: Sek, G Ryczko, K Misiewicz, J Bayer, M Klopf, F Reithmaier, JP Forchel, A
Citation: G. Sek et al., Photoreflectance spectroscopy of vertically coupled InGaAs/GaAs double quantum dots, SOL ST COMM, 117(7), 2001, pp. 401-406
Strain analysis and quantum well intermixing of a laterally modulated multiquantum well system produced by focused ion beam implantation
Authors: Grenzer, J Darowski, N Geue, T Pietsch, U Daniel, A Rennon, S Reithmaier, JP Forchel, A
Citation: J. Grenzer et al., Strain analysis and quantum well intermixing of a laterally modulated multiquantum well system produced by focused ion beam implantation, J PHYS D, 34(10A), 2001, pp. A11-A14
Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications
Authors: Mayer, B Reithmaier, JP Forchel, A
Citation: B. Mayer et al., Tertiarybutylarsine (TBAs) and -phosphine (TBP) as group V-precursors for gas source molecular beam epitaxy for optoelectronic applications, J CRYST GR, 227, 2001, pp. 298-302
Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm
Authors: Klopf, F Reithmaier, JP Forchel, A
Citation: F. Klopf et al., Low threshold high efficiency MBE grown GaInAs/(Al)GaAs quantum dot lasersemitting at 980 nm, J CRYST GR, 227, 2001, pp. 1151-1154
High-performance 980 nm quantum dot lasers for high-power applications
Authors: Klopf, F Reithmaier, JP Forchel, A Collot, P Krakowski, M Calligaro, M
Citation: F. Klopf et al., High-performance 980 nm quantum dot lasers for high-power applications, ELECTR LETT, 37(6), 2001, pp. 353-354
High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 mu m
Authors: Krebs, R Klopf, F Rennon, S Reithmaier, JP Forchel, A
Citation: R. Krebs et al., High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3 mu m, ELECTR LETT, 37(20), 2001, pp. 1223-1225
12 mu m long edge-emitting quantum-dot laser
Authors: Rennon, S Klopf, F Reithmaier, JP Forchel, A
Citation: S. Rennon et al., 12 mu m long edge-emitting quantum-dot laser, ELECTR LETT, 37(11), 2001, pp. 690-691
InAs/GaInAs quantum dot DFB lasers emitting at 1.3 mu m
Authors: Klopf, F Krebs, R Wolf, A Emmerling, M Reithmaier, JP Forchel, A
Citation: F. Klopf et al., InAs/GaInAs quantum dot DFB lasers emitting at 1.3 mu m, ELECTR LETT, 37(10), 2001, pp. 634-636
Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
Authors: Sun, YT Messmer, ER Lourdudoss, S Ahopelto, J Rennon, S Reithmaier, JP Forchel, A
Citation: Yt. Sun et al., Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy, APPL PHYS L, 79(12), 2001, pp. 1885-1887
Polariton-polariton scattering in semiconductor microcavities: Experimental observation of thresholdlike density dependence
Authors: Baars, T Bayer, M Forchel, A Schafer, F Reithmaier, JP
Citation: T. Baars et al., Polariton-polariton scattering in semiconductor microcavities: Experimental observation of thresholdlike density dependence, PHYS REV B, 61(4), 2000, pp. R2409-R2412
Photon confinement effects - from physics to applications
Authors: Forchel, A Kamp, M Happ, T Reithmaier, JP Bayer, M Koeth, J Dietrich, R
Citation: A. Forchel et al., Photon confinement effects - from physics to applications, MICROEL ENG, 53(1-4), 2000, pp. 21-28
Bent laser cavity based on 2D photonic crystal waveguide
Authors: Happ, TD Kamp, M Klopf, F Reithmaier, JP Forchel, A
Citation: Td. Happ et al., Bent laser cavity based on 2D photonic crystal waveguide, ELECTR LETT, 36(4), 2000, pp. 324-325
Quantum-dot microlasers
Authors: Rennon, S Avary, K Klopf, F Wolf, A Emmerling, M Reithmaier, JP Forchel, A
Citation: S. Rennon et al., Quantum-dot microlasers, ELECTR LETT, 36(18), 2000, pp. 1548-1550
High-frequency properties of 1.55 mu m laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography
Authors: Rennon, S Bach, L Reithmaier, JP Forchel, A Gentner, JL Goldstein, L
Citation: S. Rennon et al., High-frequency properties of 1.55 mu m laterally complex coupled distributed feedback lasers fabricated by focused-ion-beam lithography, APPL PHYS L, 77(3), 2000, pp. 325-327
Risultati: 1-25 | 26-43