Citation: Ma. Zudov et al., Shubnikov-de Haas-like oscillations in millimeterwave photoconductivity ina high-mobility two-dimensional electron gas - art. no. 201311, PHYS REV B, 6420(20), 2001, pp. 1311
Authors:
Zudov, MA
Ponomarev, IV
Efros, AL
Du, RR
Simmons, JA
Reno, JL
Citation: Ma. Zudov et al., New class of magnetoresistance oscillations: Interaction of a two-dimensional electron gas with leaky interface phonons, PHYS REV L, 86(16), 2001, pp. 3614-3617
Citation: Sr. Lee et al., Suppression of phase separation in (AlAs)(2 ML)(InAs)(2 ML) superlattices using Al0.48In0.52As monolayer insertions, APPL PHYS L, 78(22), 2001, pp. 3421-3423
Authors:
Li, JH
Holy, V
Zhong, Z
Kulik, J
Moss, SC
Norman, AG
Mascarenhas, A
Reno, JL
Follstaedt, DM
Citation: Jh. Li et al., X-ray analysis of spontaneous lateral modulation in (InAs)(n)/(AlAs)(m) short-period superlattices, APPL PHYS L, 78(2), 2001, pp. 219-221
Authors:
Vitkalov, SA
Bowers, CR
Simmons, JA
Reno, JL
Citation: Sa. Vitkalov et al., ESR detection of optical dynamic nuclear polarization in GaAs/AlxGa1-xAs quantum wells at unity filling factor in the quantum Hall effect, PHYS REV B, 61(8), 2000, pp. 5447-5451
Authors:
Kim, Y
Munteanu, FM
Perry, CH
Rickel, DG
Simmons, JA
Reno, JL
Citation: Y. Kim et al., Magnetic-field-induced charged exciton studies in a GaAs/Al0.3Ga0.7As single heterojunction, PHYS REV B, 61(7), 2000, pp. 4492-4495
Authors:
Munteanu, FM
Kim, Y
Perry, CH
Rickel, DG
Simmons, JA
Reno, JL
Citation: Fm. Munteanu et al., Crossing behavior of the singlet and triplet state of the negatively charged magnetoexciton in a GaAs/Al0.55Ga0.45As quantum well, PHYS REV B, 61(7), 2000, pp. 4731-4738
Authors:
Munteanu, FM
Rickel, DG
Perry, CH
Kim, Y
Simmons, JA
Reno, JL
Citation: Fm. Munteanu et al., Bright and dark triplet states of the negatively charged magnetoexcitons revealed in photoluminescence and time-resolved measurements, PHYS REV B, 62(24), 2000, pp. 16835-16839
Authors:
Munteanu, FM
Kim, Y
Perry, CH
Rickel, DG
Simmons, JA
Reno, JL
Citation: Fm. Munteanu et al., Photoluminescence detected enhancement of the electron-hole exchange interaction in a quantum well, SOL ST COMM, 114(2), 2000, pp. 63-68
Authors:
Follstaedt, DM
Reno, JL
Jones, ED
Lee, SR
Norman, AG
Moutinho, HR
Mascarenhas, A
Twesten, RD
Citation: Dm. Follstaedt et al., Effect of surface steps on the microstructure of lateral composition modulation, APPL PHYS L, 77(5), 2000, pp. 669-671
Authors:
Francoeur, S
Zhang, Y
Norman, AG
Alsina, F
Mascarenhas, A
Reno, JL
Jones, ED
Lee, SR
Follstaedt, DM
Citation: S. Francoeur et al., Optical properties of spontaneous lateral composition modulation in AlAs/InAs short-period superlattices, APPL PHYS L, 77(12), 2000, pp. 1765-1767
Authors:
Lee, SR
Millunchick, JM
Twesten, RD
Follstaedt, DM
Reno, JL
Ahrenkiel, SP
Norman, AG
Citation: Sr. Lee et al., Reciprocal-space analysis of compositional modulation in short-period superlattices using position-sensitive x-ray detection, J MAT S-M E, 10(3), 1999, pp. 191-197
Authors:
Vitkalov, SA
Bowers, CR
Simmons, JA
Reno, JL
Citation: Sa. Vitkalov et al., Nuclear spin-orientation dependence of magnetoconductance: a new method for measuring the spin of charged excitations in the quantum Hall effect, J PHYS-COND, 11(37), 1999, pp. L407-L414
Authors:
Jones, ED
Follstaedt, DM
Lee, SR
Reno, JL
Millunchick, JM
Ahrenkiel, SP
Mascarenhas, A
Norman, AG
Zhang, Y
Twesten, RD
Citation: Ed. Jones et al., Photoluminescence studies of lateral composition modulated short-period AlAs/InAs superlattices, THIN SOL FI, 357(1), 1999, pp. 31-34
Authors:
Munteanu, FM
Kim, Y
Perry, CH
Rickel, DG
Simmons, JA
Reno, JL
Citation: Fm. Munteanu et al., Photoluminescence detected doublet structure in the integer and fractionalquantum Hall regime, SOL ST COMM, 111(12), 1999, pp. 665-670
Authors:
Vitkalov, SA
Bowers, CR
Simmons, JA
Reno, JL
Citation: Sa. Vitkalov et al., Effect of the nuclear hyperfine field on the 2D electron conductivity in the quantum Hall regime, JETP LETTER, 69(1), 1999, pp. 64-70
Authors:
Wendt, JR
Simmons, JA
Moon, JS
Blount, MA
Baca, WE
Reno, JL
Citation: Jr. Wendt et al., Double electron layer tunneling transistors by dual-side electron beam lithography, J VAC SCI B, 16(6), 1998, pp. 3808-3811