Citation: Cj. Glover et al., Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation, NUCL INST B, 175, 2001, pp. 51-55
Authors:
Glover, CJ
Ridgway, MC
Yu, KM
Foran, GJ
Desnica-Frankovic, D
Clerc, C
Hansen, JL
Nylandsted-Larsen, A
Citation: Cj. Glover et al., Structural-relaxation-induced bond length and bond angle changes in amorphized Ge - art. no. 073204, PHYS REV B, 6307(7), 2001, pp. 3204
Authors:
Williams, JS
Zhu, XF
Ridgway, MC
Conway, MJ
Williams, BC
Fortuna, F
Ruault, MO
Bernas, H
Citation: Js. Williams et al., Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation, APPL PHYS L, 77(26), 2000, pp. 4280-4282
Authors:
Yu, KM
Walukiewicz, W
Shan, W
Wu, J
Ager, JW
Haller, EE
Geisz, JF
Ridgway, MC
Citation: Km. Yu et al., Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x, APPL PHYS L, 77(18), 2000, pp. 2858-2860
Citation: Pw. Leech et Mc. Ridgway, Enhancement of the etch rate of LiNbO3 by prior bombardment with MeV O2+ ions, J VAC SCI A, 17(6), 1999, pp. 3358-3361
Authors:
Ridgway, MC
Glover, CJ
Bezakova, E
Byrne, AP
Foran, GJ
Yu, KM
Citation: Mc. Ridgway et al., Atomic-level characterisation of ion-induced amorphisation in compound semiconductors, NUCL INST B, 148(1-4), 1999, pp. 391-395
Citation: Mc. Ridgway et al., Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements, NUCL INST B, 147(1-4), 1999, pp. 148-154
Authors:
Ridgway, MC
Yu, KM
Glover, CJ
Foran, GJ
Clerc, C
Hansen, JL
Larsen, AN
Citation: Mc. Ridgway et al., Composition-dependent bond lengths in crystalline and amorphized GexSi1-x alloys, PHYS REV B, 60(15), 1999, pp. 10831-10836
Authors:
Gazecki, J
Kubica, JM
Zamora, M
Reeves, GK
Johnson, CM
Ridgway, MC
Citation: J. Gazecki et al., Refractive indices and thicknesses of optical waveguides fabricated by silicon ion implantation into silica glass, THIN SOL FI, 340(1-2), 1999, pp. 233-236
Authors:
Yu, KM
Shan, W
Glover, CJ
Ridgway, MC
Wong, WS
Yang, W
Citation: Km. Yu et al., Local structures of free-standing AlxGa1-xN thin films studied by extendedx-ray absorption fine structure, APPL PHYS L, 75(26), 1999, pp. 4097-4099