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Results: 1-25 | 26-29
Results: 1-25/29
Structure and low- temperature thermal relaxation of ion- implanted germanium
Authors: Glover, CJ Ridgway, MC Yu, KM Foran, GJ Clerc, C Hansen, JL Nylandsted-Larsen, A
Citation: Cj. Glover et al., Structure and low- temperature thermal relaxation of ion- implanted germanium, J SYNCHROTR, 8, 2001, pp. 773-775
Interaction of defects and metals with nanocavities in silicon
Authors: Williams, JS Ridgway, MC Conway, MJ Wong-Leung, J Zhu, XF Petravic, M Fortuna, F Ruault, MO Bernas, H Kinomura, A Nakano, Y Hayashi, Y
Citation: Js. Williams et al., Interaction of defects and metals with nanocavities in silicon, NUCL INST B, 178, 2001, pp. 33-43
Structural modifications in amorphous Ge produced by ion implantation
Authors: Desnica-Frankovic, ID Furic, K Desnica, UV Ridgway, MC Glover, CJ
Citation: Id. Desnica-frankovic et al., Structural modifications in amorphous Ge produced by ion implantation, NUCL INST B, 178, 2001, pp. 192-195
Implantation-induced disorder in amorphous Ge: Production and relaxation
Authors: Ridgway, MC Glover, CJ Desnica-Frankovic, ID Furic, K Yu, KM Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Mc. Ridgway et al., Implantation-induced disorder in amorphous Ge: Production and relaxation, NUCL INST B, 175, 2001, pp. 21-25
Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation
Authors: Glover, CJ Byrne, AP Ridgway, MC
Citation: Cj. Glover et al., Irradiation-induced defect configurations in Ge substrates characterised with perturbed angular correlation, NUCL INST B, 175, 2001, pp. 51-55
Structural characterisation of amorphised compound semiconductors
Authors: Ridgway, MC Glover, CJ Yu, KM Foran, GJ Lee, TW Moon, Y Yoon, E
Citation: Mc. Ridgway et al., Structural characterisation of amorphised compound semiconductors, NUCL INST B, 175, 2001, pp. 280-285
Structural-relaxation-induced bond length and bond angle changes in amorphized Ge - art. no. 073204
Authors: Glover, CJ Ridgway, MC Yu, KM Foran, GJ Desnica-Frankovic, D Clerc, C Hansen, JL Nylandsted-Larsen, A
Citation: Cj. Glover et al., Structural-relaxation-induced bond length and bond angle changes in amorphized Ge - art. no. 073204, PHYS REV B, 6307(7), 2001, pp. 3204
Formation of diluted III-V nitride thin films by N ion implantation
Authors: Yu, KM Walukiewicz, W Wu, J Beeman, JW Ager, JW Haller, EE Shan, W Xin, HP Tu, CW Ridgway, MC
Citation: Km. Yu et al., Formation of diluted III-V nitride thin films by N ion implantation, J APPL PHYS, 90(5), 2001, pp. 2227-2234
Direct observation of irradiation-induced nanocavity shrinkage in Si
Authors: Zhu, XF Williams, JS Conway, MJ Ridgway, MC Fortuna, F Ruault, MO Bernas, H
Citation: Xf. Zhu et al., Direct observation of irradiation-induced nanocavity shrinkage in Si, APPL PHYS L, 79(21), 2001, pp. 3416-3418
Zinc and group V element co-implantation in indium phosphide
Authors: Yu, KM Ridgway, MC
Citation: Km. Yu et Mc. Ridgway, Zinc and group V element co-implantation in indium phosphide, NUCL INST B, 168(1), 2000, pp. 65-71
Micro- and macro-structure of implantation-induced disorder in Ge
Authors: Glover, CJ Ridgway, MC Byrne, AP Yu, KM Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Cj. Glover et al., Micro- and macro-structure of implantation-induced disorder in Ge, NUCL INST B, 161, 2000, pp. 1033-1037
Ion-dose-dependent microstructure in amorphous Ge
Authors: Ridgway, MC Glover, CJ Yu, KM Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Mc. Ridgway et al., Ion-dose-dependent microstructure in amorphous Ge, PHYS REV B, 61(19), 2000, pp. 12586-12589
Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation
Authors: Williams, JS Zhu, XF Ridgway, MC Conway, MJ Williams, BC Fortuna, F Ruault, MO Bernas, H
Citation: Js. Williams et al., Preferential amorphization and defect annihilation at nanocavities in silicon during ion irradiation, APPL PHYS L, 77(26), 2000, pp. 4280-4282
Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x
Authors: Yu, KM Walukiewicz, W Shan, W Wu, J Ager, JW Haller, EE Geisz, JF Ridgway, MC
Citation: Km. Yu et al., Nitrogen-induced enhancement of the free electron concentration in sulfur implanted GaNxAs1-x, APPL PHYS L, 77(18), 2000, pp. 2858-2860
Characterisation of ion-implantation-induced disorder in GaAs by EXAFS
Authors: Glover, CJ Yu, KM Ridgway, MC Foran, GJ
Citation: Cj. Glover et al., Characterisation of ion-implantation-induced disorder in GaAs by EXAFS, JPN J A P 1, 38, 1999, pp. 548-551
Enhancement of the etch rate of LiNbO3 by prior bombardment with MeV O2+ ions
Authors: Leech, PW Ridgway, MC
Citation: Pw. Leech et Mc. Ridgway, Enhancement of the etch rate of LiNbO3 by prior bombardment with MeV O2+ ions, J VAC SCI A, 17(6), 1999, pp. 3358-3361
Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3
Authors: Leech, PW Ridgway, MC
Citation: Pw. Leech et Mc. Ridgway, Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3, NUCL INST B, 159(3), 1999, pp. 187-190
Atomic-level characterisation of ion-induced amorphisation in compound semiconductors
Authors: Ridgway, MC Glover, CJ Bezakova, E Byrne, AP Foran, GJ Yu, KM
Citation: Mc. Ridgway et al., Atomic-level characterisation of ion-induced amorphisation in compound semiconductors, NUCL INST B, 148(1-4), 1999, pp. 391-395
Ion-implantation in SiC and GaN
Authors: Papanicolaou, N Rao, MV Molnar, B Tucker, J Edwards, A Holland, OW Ridgway, MC
Citation: N. Papanicolaou et al., Ion-implantation in SiC and GaN, NUCL INST B, 148(1-4), 1999, pp. 416-420
Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements
Authors: Ridgway, MC Glover, CJ Foran, GJ Yu, KM
Citation: Mc. Ridgway et al., Atomic-level characterisation of the structure of amorphised GaAs utilising EXAFS measurements, NUCL INST B, 147(1-4), 1999, pp. 148-154
Composition-dependent bond lengths in crystalline and amorphized GexSi1-x alloys
Authors: Ridgway, MC Yu, KM Glover, CJ Foran, GJ Clerc, C Hansen, JL Larsen, AN
Citation: Mc. Ridgway et al., Composition-dependent bond lengths in crystalline and amorphized GexSi1-x alloys, PHYS REV B, 60(15), 1999, pp. 10831-10836
Refractive indices and thicknesses of optical waveguides fabricated by silicon ion implantation into silica glass
Authors: Gazecki, J Kubica, JM Zamora, M Reeves, GK Johnson, CM Ridgway, MC
Citation: J. Gazecki et al., Refractive indices and thicknesses of optical waveguides fabricated by silicon ion implantation into silica glass, THIN SOL FI, 340(1-2), 1999, pp. 233-236
Ion-implantation in bulk semi-insulating 4H-SiC
Authors: Rao, MV Tucker, JB Ridgway, MC Holland, OW Papanicolaou, N Mittereder, J
Citation: Mv. Rao et al., Ion-implantation in bulk semi-insulating 4H-SiC, J APPL PHYS, 86(2), 1999, pp. 752-758
S and Si ion implantation in GaSb grown on GaAs
Authors: Rao, MV Berry, AK Do, TQ Ridgway, MC Chi, PH Waterman, J
Citation: Mv. Rao et al., S and Si ion implantation in GaSb grown on GaAs, J APPL PHYS, 86(11), 1999, pp. 6068-6071
Local structures of free-standing AlxGa1-xN thin films studied by extendedx-ray absorption fine structure
Authors: Yu, KM Shan, W Glover, CJ Ridgway, MC Wong, WS Yang, W
Citation: Km. Yu et al., Local structures of free-standing AlxGa1-xN thin films studied by extendedx-ray absorption fine structure, APPL PHYS L, 75(26), 1999, pp. 4097-4099
Risultati: 1-25 | 26-29