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Results: 1-25/53
Authors:
SUGIURA T
HASE N
IGUCHI Y
SAWAKI N
Citation: T. Sugiura et al., RAMAN-SCATTERING STUDY OF INGAASP QUATERNARY ALLOYS GROWN ON INP IN THE IMMISCIBLE REGION, JPN J A P 1, 37(2), 1998, pp. 544-549
Authors:
AHN HS
YAMAGUCHI M
SAWAKI N
Citation: Hs. Ahn et al., MIXING RESONANCE OF ELECTRONIC STATES AND OPTICAL NONLINEARITY IN A GAAS/ALGAAS ASYMMETRIC TRIPLE QUANTUM-WELL STRUCTURE/, JPN J A P 1, 37(1), 1998, pp. 45-50
Authors:
KAWAGUCHI Y
HONDA Y
MATSUSHIMA H
YAMAGUCHI M
HIRAMATSU K
SAWAKI N
Citation: Y. Kawaguchi et al., SELECTIVE-AREA GROWTH OF GAN ON SI SUBSTRATE USING SIO2 MASK BY METALORGANIC VAPOR-PHASE EPITAXY, JPN J A P 2, 37(8B), 1998, pp. 966-969
Authors:
KAWAGUCHI Y
NAMBU S
SONE H
SHIBATA T
MATSUSHIMA H
YAMAGUCHI M
MIYAKE H
HIRAMATSU K
SAWAKI N
Citation: Y. Kawaguchi et al., SELECTIVE-AREA GROWTH OF GAN USING TUNGSTEN MASK BY METALORGANIC VAPOR-PHASE EPITAXY, JPN J A P 2, 37(7B), 1998, pp. 845-848
Authors:
KATSUNO M
SAWAKI N
SUZUKI T
HARA K
Citation: M. Katsuno et al., MAGNETOTRANSPORT STUDY OF THE INTERSUBBAND SCATTERING IN AN SI DELTA-DOPED GAAS, Semiconductor science and technology, 13(7), 1998, pp. 739-745
Authors:
YAMAGUCHI M
SUGIMOTO R
SAWAKI N
Citation: M. Yamaguchi et al., DELOCALIZATION AND MOBILITY OF ELECTRONS AT THE RESONANCE OF GROUND-STATES IN A COUPLED DOUBLE-QUANTUM-WELL STRUCTURE, Solid-state electronics, 42(7-8), 1998, pp. 1553-1556
Authors:
KATSUNO M
SAWAKI N
SUZUKI T
HARA K
Citation: M. Katsuno et al., SCALING OF THE NEGATIVE MAGNETORESISTANCE IN AN SI ATOMIC-LAYER-DOPEDGAAS, Solid-state electronics, 42(7-8), 1998, pp. 1557-1560
Authors:
KAWAGUCHI Y
SHIMIZU M
YAMAGUCHI M
HIRAMATSU K
SAWAKI N
TAKI W
TSUDA H
KUWANO N
OKI K
ZHELEVA T
DAVIS RF
Citation: Y. Kawaguchi et al., THE FORMATION OF CRYSTALLINE DEFECTS AND CRYSTAL-GROWTH MECHANISM IN INXGA1-XN GAN HETEROSTRUCTURE GROWN BY METALORGANIC VAPOR-PHASE EPITAXY/, Journal of crystal growth, 190, 1998, pp. 24-28
Authors:
SHIBATA T
SONE H
YAHASHI K
YAMAGUCHI M
HIRAMATSU K
SAWAKI N
ITOH N
Citation: T. Shibata et al., HYDRIDE VAPOR-PHASE EPITAXY GROWTH OF HIGH-QUALITY GAN BULK SINGLE-CRYSTAL BY EPITAXIAL LATERAL OVERGROWTH, Journal of crystal growth, 190, 1998, pp. 67-71
Authors:
MATSUSHIMA H
YAMAGUCHI M
HIRAMATSU K
SAWAKI N
Citation: H. Matsushima et al., SUBMICRON FINE-STRUCTURE OF GAN BY METALORGANIC VAPOR-PHASE EPITAXY (MOVPE) SELECTIVE-AREA GROWTH (SAG) AND BURIED STRUCTURE BY EPITAXIAL LATERAL OVERGROWTH (ELO), Journal of crystal growth, 190, 1998, pp. 78-82
Authors:
HACKE P
OKUSHI H
KURODA T
DETCHPROHM T
HIRAMATSU K
SAWAKI N
Citation: P. Hacke et al., CHARACTERIZATION OF MID-GAP STATES IN HVPE AND MOVPE-GROWN N-TYPE GAN, Journal of crystal growth, 190, 1998, pp. 541-545
Authors:
HOFFMANN A
SIEGLE H
KASCHNER A
ECKEY L
THOMSEN C
CHRISTEN J
BERTRAM F
SCHMIDT M
HIRAMATSU K
KITAMURA S
SAWAKI N
Citation: A. Hoffmann et al., LOCAL STRAIN DISTRIBUTION OF HEXAGONAL GAN PYRAMIDS, Journal of crystal growth, 190, 1998, pp. 630-633
Authors:
SHIN W
HIKOSAKA T
SEO WS
AHN HS
SAWAKI N
KOUMOTO K
Citation: W. Shin et al., FIBROUS AND POROUS MICROSTRUCTURE FORMATION IN 6H-SIC BY ANODIZATION IN HF SOLUTION, Journal of the Electrochemical Society, 145(7), 1998, pp. 2456-2460
Authors:
NAGAI H
ZHU QS
KAWAGUCHI Y
HIRAMATSU K
SAWAKI N
Citation: H. Nagai et al., HOLE TRAP LEVELS IN MG-DOPED GAN GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Applied physics letters, 73(14), 1998, pp. 2024-2026
Authors:
SAWAKI N
ANZAI N
MURAKAMI T
YAMAGUCHI M
IKEDA T
TAYA M
Citation: N. Sawaki et al., TUNNELING TRANSFER AND ENERGY RELAXATION RATE OF PHOTO-EXCITED CARRIERS IN COUPLED QUANTUM-WELLS, JPN J A P 1, 36(6B), 1997, pp. 4008-4012
Authors:
SHIMIZU M
KAWAGUCHI Y
HIRAMATSU K
SAWAKI N
Citation: M. Shimizu et al., METALORGANIC VAPOR-PHASE EPITAXY OF THICK INGAN ON SAPPHIRE SUBSTRATE, JPN J A P 1, 36(6A), 1997, pp. 3381-3384
Authors:
NIWA S
YAMAGUCHI M
SUZUKI T
SAWAKI N
Citation: S. Niwa et al., ENHANCEMENT OF ELECTRON-MOBILITY IN QUASI-ONE-DIMENSIONAL STRUCTURE, JPN J A P 1, 36(6A), 1997, pp. 3675-3680
Authors:
NIWA S
YAMAGUCHI M
SAWAKI N
SUZUKI T
Citation: S. Niwa et al., ENERGY RELAXATION OF PHOTO-EXCITED HOT-ELECTRONS UNDER AN EXTERNAL ELECTRIC-FIELD IN A QUASI-ONE-DIMENSIONAL STRUCTURE, Physica status solidi. b, Basic research, 204(1), 1997, pp. 283-286
Authors:
SAWAKI N
ANZAI T
Citation: N. Sawaki et T. Anzai, EFFECT OF CARRIER-CARRIER SCATTERING ON THE TUNNELING AND ENERGY RELAXATION PROCESS IN A COUPLED-QUANTUM-WELL, Physica status solidi. b, Basic research, 204(1), 1997, pp. 423-426
Authors:
AHN HS
YAMAGUCHI M
KIDOKORO T
SAWAKI N
SUZUKI T
HARA K
Citation: Hs. Ahn et al., OPTICAL NONLINEARITY IN A GAAS ALGAAS ASYMMETRIC TRIPLE-QUANTUM-WELL STRUCTURE/, Semiconductor science and technology, 12(6), 1997, pp. 722-728
Authors:
SHIMIZU M
KAWAGUCHI Y
HIRAMATSU K
SAWAKI N
Citation: M. Shimizu et al., MOVPE GROWTH OF THICK HOMOGENEOUS INGAN DIRECTLY ON SAPPHIRE SUBSTRATE USING ALN BUFFER LAYER, Solid-state electronics, 41(2), 1997, pp. 145-147
Authors:
MONEMAR B
BERGMAN JP
BUYANOVA IA
AMANO H
AKASAKI I
DETCHPROHM T
HIRAMATSU K
SAWAKI N
Citation: B. Monemar et al., THE EXCITONIC BANDGAP OF GAN - DEPENDENCE ON SUBSTRATE, Solid-state electronics, 41(2), 1997, pp. 239-241
Authors:
KHAN MRH
NAKAYAMA H
DETCHPROHM T
HIRAMATSU K
SAWAKI N
Citation: Mrh. Khan et al., A STUDY ON BARRIER HEIGHT OF AU-ALXGA1-XN SCHOTTKY DIODES IN THE RANGE LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.20, Solid-state electronics, 41(2), 1997, pp. 287-294
Authors:
OHUCHI Y
TADATOMO K
NAKAYAMA H
KANEDA N
DETCHPROHM T
HIRAMATSU K
SAWAKI N
Citation: Y. Ohuchi et al., NEW DOPANT PRECURSORS FOR N-TYPE AND P-TYPE GAN, Journal of crystal growth, 170(1-4), 1997, pp. 325-328
Authors:
KANEDA N
DETCHPROHM T
HIRAMATSU K
SAWAKI N
Citation: N. Kaneda et al., SI-DOPING IN GAN GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY USING TETRAETHYLSILANE, JPN J A P 2, 35(4B), 1996, pp. 468-470