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Results: 1-15 |
Results: 15
WAVELENGTH DEPENDENCE OF UV LASER SELECTIVE ALXGA1-XAS GROWTH VIA ADLAYER STIMULATION IN OMVPE
Authors: WANKERL A EMERSON DT COOK MJ SHEALY JR
Citation: A. Wankerl et al., WAVELENGTH DEPENDENCE OF UV LASER SELECTIVE ALXGA1-XAS GROWTH VIA ADLAYER STIMULATION IN OMVPE, Journal of crystal growth, 191(1-2), 1998, pp. 8-17
LASER-STIMULATED SELECTIVE-AREA GROWTH OF QUANTUM DOTS
Authors: WANKER A SCHREMER AT SHEALY JR
Citation: A. Wanker et al., LASER-STIMULATED SELECTIVE-AREA GROWTH OF QUANTUM DOTS, Applied physics letters, 72(25), 1998, pp. 3332-3334
SUBMICRON SELECTIVE ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWTH USING TUNABLE DEEP UV EXCITATION
Authors: WANKERL A EMERSON DT SHEALY JR
Citation: A. Wankerl et al., SUBMICRON SELECTIVE ORGANOMETALLIC VAPOR-PHASE EPITAXY GROWTH USING TUNABLE DEEP UV EXCITATION, Applied physics letters, 72(13), 1998, pp. 1614-1616
HIGH-PERFORMANCE MSM PHOTODETECTORS USING CU SCHOTTKY CONTACTS
Authors: DAVIDSON AC WISE FW COMPTON RC EMERSON DT SHEALY JR CURRIE M WANG CC
Citation: Ac. Davidson et al., HIGH-PERFORMANCE MSM PHOTODETECTORS USING CU SCHOTTKY CONTACTS, IEEE photonics technology letters, 9(5), 1997, pp. 657-659
GROWTH OF DIRECT BANDGAP GAINP QUANTUM DOTS ON GAP SUBSTRATES
Authors: LEE JW SCHREMER AT FEKETE D SHEALY JR BALLANTYNE JM
Citation: Jw. Lee et al., GROWTH OF DIRECT BANDGAP GAINP QUANTUM DOTS ON GAP SUBSTRATES, Journal of electronic materials, 26(10), 1997, pp. 1199-1204
SELECTIVE-AREA GROWTH OF GAP ON SI BY MOCVD
Authors: LEE JW SALZMAN J EMERSON D SHEALY JR BALLANTYNE M
Citation: Jw. Lee et al., SELECTIVE-AREA GROWTH OF GAP ON SI BY MOCVD, Journal of crystal growth, 172(1-2), 1997, pp. 53-57
DIRECT-BAND-GAP STRUCTURES ON NANOMETER-SCALE, MICROMACHINED SILICON TIPS
Authors: SHEALY JR MACDONALD NC XU Y WHITTINGHAM KL EMERSON DT PITTS BL
Citation: Jr. Shealy et al., DIRECT-BAND-GAP STRUCTURES ON NANOMETER-SCALE, MICROMACHINED SILICON TIPS, Applied physics letters, 70(25), 1997, pp. 3458-3460
MEASUREMENT OF THE MEAN FREE-PATH OF DISLOCATION GLIDE IN THE INGAAS GAAS MATERIALS SYSTEM/
Authors: MATRAGRANO MJ AST DG WATSON GP SHEALY JR
Citation: Mj. Matragrano et al., MEASUREMENT OF THE MEAN FREE-PATH OF DISLOCATION GLIDE IN THE INGAAS GAAS MATERIALS SYSTEM/, Journal of applied physics, 79(2), 1996, pp. 776-780
ANISOTROPIC STRAIN RELAXATION OF GAINP EPITAXIAL LAYERS IN COMPRESSION AND TENSION
Authors: MATRAGRANO MJ SHEALY JR KRISHNAMOORTHY V
Citation: Mj. Matragrano et al., ANISOTROPIC STRAIN RELAXATION OF GAINP EPITAXIAL LAYERS IN COMPRESSION AND TENSION, Journal of applied physics, 79(11), 1996, pp. 8371-8378
STRUCTURAL INVESTIGATION OF SHORT-PERIOD GAINAS INP SUPERLATTICES/
Authors: EMERSON DT SHEALY JR
Citation: Dt. Emerson et Jr. Shealy, STRUCTURAL INVESTIGATION OF SHORT-PERIOD GAINAS INP SUPERLATTICES/, Applied physics letters, 69(3), 1996, pp. 383-385
SYNTHESIS OF INP-BASED 1.3-MU-M BAND-GAP PSEUDOALLOY BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: EMERSON DT SHEALY JR
Citation: Dt. Emerson et Jr. Shealy, SYNTHESIS OF INP-BASED 1.3-MU-M BAND-GAP PSEUDOALLOY BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Applied physics letters, 69(17), 1996, pp. 2584-2586
GROWTH OF GAINP GAASP SHORT-PERIOD SUPERLATTICES BY FLOW MODULATION ORGANOMETALLIC VAPOR-PHASE EPITAXY/
Authors: WHITTINGHAM KL EMERSON DT SHEALY JR MATRAGRANO MJ AST DG
Citation: Kl. Whittingham et al., GROWTH OF GAINP GAASP SHORT-PERIOD SUPERLATTICES BY FLOW MODULATION ORGANOMETALLIC VAPOR-PHASE EPITAXY/, Journal of electronic materials, 24(11), 1995, pp. 1611-1615
THERMAL AND PLASMA-ASSISTED NITRIDATION OF GAAS(100) USING NH3
Authors: JONES ME SHEALY JR ENGSTROM JR
Citation: Me. Jones et al., THERMAL AND PLASMA-ASSISTED NITRIDATION OF GAAS(100) USING NH3, Applied physics letters, 67(4), 1995, pp. 542-544
EFFECT OF PHOSPHORUS COMPOSITION ON THE STRUCTURAL QUALITY OF GAINP GAASP SHORT-PERIOD SUPERLATTICES/
Authors: WHITTINGHAM KL EMERSON DT SHEALY JR MATRAGRANO MJ AST DG
Citation: Kl. Whittingham et al., EFFECT OF PHOSPHORUS COMPOSITION ON THE STRUCTURAL QUALITY OF GAINP GAASP SHORT-PERIOD SUPERLATTICES/, Applied physics letters, 67(25), 1995, pp. 3741-3743
CHARACTERIZATION AND ELIMINATION OF SURFACE-DEFECTS IN GAXIN1-XP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
Authors: MATRAGRANO MJ KRISHNAMOORTHY V AST DG SHEALY JR
Citation: Mj. Matragrano et al., CHARACTERIZATION AND ELIMINATION OF SURFACE-DEFECTS IN GAXIN1-XP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY, Journal of crystal growth, 142(3-4), 1994, pp. 275-283
Risultati: 1-15 |