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Results: 1-12 |
Results: 12
ONE-DIMENSIONAL STRUCTURES FORMED BY LOW-TEMPERATURE SLIP OF DISLOCATIONS THAT ACT AS SOURCES OF DISLOCATION ABSORPTION AND EMISSION IN II-VI SEMICONDUCTOR CRYSTALS
Authors: TARBAEV NI SHEPELSKII GA
Citation: Ni. Tarbaev et Ga. Shepelskii, ONE-DIMENSIONAL STRUCTURES FORMED BY LOW-TEMPERATURE SLIP OF DISLOCATIONS THAT ACT AS SOURCES OF DISLOCATION ABSORPTION AND EMISSION IN II-VI SEMICONDUCTOR CRYSTALS, Semiconductors (Woodbury, N.Y.), 32(6), 1998, pp. 580-586
ON TRAPPING OF MINORITY CURRENT CARRIERS IN N-TYPE CDXHG1-XTE AT LOW-TEMPERATURES
Authors: GASANZADE SG SHEPELSKII GA
Citation: Sg. Gasanzade et Ga. Shepelskii, ON TRAPPING OF MINORITY CURRENT CARRIERS IN N-TYPE CDXHG1-XTE AT LOW-TEMPERATURES, Semiconductors, 32(4), 1998, pp. 389-391
PHOTOELECTRIC AND PHOTOMAGNETIC PROPERTIES OF THE GAPLESS SEMICONDUCTOR CDXHG1-XTE IN THE INFRARED AND MILLIMETER SPECTRAL REGIONS WHEN AN ENERGY-GAP IS OPENED
Authors: GASANZADE SG SALKOV EA SHEPELSKII GA
Citation: Sg. Gasanzade et al., PHOTOELECTRIC AND PHOTOMAGNETIC PROPERTIES OF THE GAPLESS SEMICONDUCTOR CDXHG1-XTE IN THE INFRARED AND MILLIMETER SPECTRAL REGIONS WHEN AN ENERGY-GAP IS OPENED, Semiconductors, 31(1), 1997, pp. 29-35
LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS
Authors: TARBAEV NI SHEPELSKII GA SALKOV EA
Citation: Ni. Tarbaev et al., LOW-TEMPERATURE MOTION OF DISLOCATIONS AS A POSSIBLE MECHANISM OF FORMATION OF ONE-DIMENSIONAL ELECTRONIC-STRUCTURES IN SEMICONDUCTOR CRYSTALS, JETP letters, 66(10), 1997, pp. 675-680
BIREFRINGENCE OF CADMIUM TELLURIDE AT 77 K INDUCED BY UNIAXIAL-STRESS
Authors: VASKO FT STRIKHA MV TARBAEV NI SHEPELSKII GA
Citation: Ft. Vasko et al., BIREFRINGENCE OF CADMIUM TELLURIDE AT 77 K INDUCED BY UNIAXIAL-STRESS, Semiconductors, 30(6), 1996, pp. 545-549
LOW-TEMPERATURE PHOTOELECTRIC CHARACTERISTICS OF MNXHG1-XTE
Authors: GASANZADE SG KALENIK VI SHEPELSKII GA
Citation: Sg. Gasanzade et al., LOW-TEMPERATURE PHOTOELECTRIC CHARACTERISTICS OF MNXHG1-XTE, Semiconductors, 30(1), 1996, pp. 34-38
LOW-TEMPERATURE DISPERSION OF PIEZOBIREFR INGENCE AND OPTICAL DIAGNOSTICS OF INTERNAL MECHANICAL STRESSES IN CADMIUM TELLURIDE
Authors: TARBAEV NI SHEPELSKII GA
Citation: Ni. Tarbaev et Ga. Shepelskii, LOW-TEMPERATURE DISPERSION OF PIEZOBIREFR INGENCE AND OPTICAL DIAGNOSTICS OF INTERNAL MECHANICAL STRESSES IN CADMIUM TELLURIDE, Optika i spektroskopia, 81(5), 1996, pp. 842-847
RADIATIVE RECOMBINATION TRANSITIONS BETWEEN STATES OF BOUND AND FREE-EXCITONS IN UNIAXIALLY STRAINED CADMIUM TELLURIDE
Authors: STRIKHA MV TARBAEV NI SHEPELSKII GA
Citation: Mv. Strikha et al., RADIATIVE RECOMBINATION TRANSITIONS BETWEEN STATES OF BOUND AND FREE-EXCITONS IN UNIAXIALLY STRAINED CADMIUM TELLURIDE, Semiconductors, 29(9), 1995, pp. 838-843
POLARIZATION-DEPENDENT PHOTOCONDUCTIVITY IN UNIAXIALLY DEFORMED NARROW-GAP SEMICONDUCTORS
Authors: VASKO FT GASANZADE SG STRIKHA MV SHEPELSKII GA
Citation: Ft. Vasko et al., POLARIZATION-DEPENDENT PHOTOCONDUCTIVITY IN UNIAXIALLY DEFORMED NARROW-GAP SEMICONDUCTORS, Semiconductors, 29(4), 1995, pp. 368-370
PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN EPITAXIAL MNXHG1-XTE LAYERS AT LOW-TEMPERATURES
Authors: GASANZADE SG ZHADKO IP ZINCHENKO EA SOCHINSKII NV SHEPELSKII GA
Citation: Sg. Gasanzade et al., PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN EPITAXIAL MNXHG1-XTE LAYERS AT LOW-TEMPERATURES, Semiconductors, 28(5), 1994, pp. 470-473
CHARACTERISTIC FEATURES OF THE TEMPERATURE AND SPECTRAL DEPENDENCES OF THE PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN P-TYPE CDXHG1-XTE AT LOW-TEMPERATURES
Authors: GASANZADE SG BOGOBOYASHCHII VV ZHADKO IP ZINCHENKO EA SHEPELSKII GA
Citation: Sg. Gasanzade et al., CHARACTERISTIC FEATURES OF THE TEMPERATURE AND SPECTRAL DEPENDENCES OF THE PHOTOCONDUCTIVITY AND PHOTOMAGNETIC EFFECT IN P-TYPE CDXHG1-XTE AT LOW-TEMPERATURES, Semiconductors, 27(9), 1993, pp. 833-837
RECOMBINATION MECHANISMS AND TRANSPORT PHENOMENA IN UNIAXIALLY COMPRESSED CDXHG1-XTE
Authors: GASANZADE SG SHEPELSKII GA
Citation: Sg. Gasanzade et Ga. Shepelskii, RECOMBINATION MECHANISMS AND TRANSPORT PHENOMENA IN UNIAXIALLY COMPRESSED CDXHG1-XTE, Semiconductors, 27(8), 1993, pp. 733-737
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